MT41K256M16HA-125:E - 4Gbit DDR3L SDRAM 800MHz | Micron
N.º de pieza: MT41K256M16HA-125:E ✓ Activo| Cant. | Precio unitario | Total |
|---|---|---|
| 1 | $4.85 | $4,85 |
| 10 | $4.36 | $43,60 |
| 100 | $3.88 | $388,00 |
| 500 | $3.49 | $1.745,00 |
| 1.000 | $3.1 | $3.100,00 |
MT41K256M16HA-125:E Descripción general
DDR3L SDRAM is a low-voltage variant of DDR3 SDRAM, which is a type of synchronous dynamic random-access memory that transfers data on both edges of the clock signal. DDR3L operates at 1.35V, reducing power consumption by about 15% compared to standard DDR3 (1.5V), while offering the same performance. It is part of the DRAM family, which includes SDRAM, DDR, DDR2, DDR3, and DDR4, and is widely used in computing, networking, and embedded systems.
Key features include a 4Gbit density, 16-bit data bus, 800 MHz clock speed, and a 13.75 ns CAS latency. The device supports on-die termination (ODT), programmable CAS latency, and burst lengths of 8 and 4 (with burst chop). It operates over a temperature range of 0°C to +95°C (TC) and is RoHS compliant. The 96-ball FBGA package (9x14 mm) is optimized for high-density PCB layouts.
Technically, the MT41K256M16HA-125:E uses a CMOS process and features a 16n prefetch architecture, enabling high data rates. It includes auto-refresh and self-refresh modes, with a refresh period of 7.8 us at 85°C. The device supports DLL (Delay-Locked Loop) for precise timing and features programmable read and write latencies. Its low-voltage operation reduces I/O power, making it suitable for battery-powered devices.
Typical applications include DDR3L memory modules for laptops, embedded systems, networking equipment (routers, switches), and industrial computing. Its low power and high density make it ideal for applications requiring large memory capacity with minimal power consumption.
When designing with this device, ensure proper decoupling capacitors near the VDD and VDDQ pins, and follow the PCB layout guidelines in the Micron datasheet to minimize signal integrity issues. The device requires a 1.35V supply for VDD and VDDQ, and a separate VREF voltage for the address/command bus.
Alternativas directas para MT41K256M16HA-125:E — mismo encapsulado, compatible pin a pin. Se excluyen las piezas de otro encapsulado que requieren retrabajo de la PCB.
Variantes de esta serie
Modelos de la misma serie compatibles directamente con MT41K256M16HA-125:E (mismo factor de forma y huella) — difiere en Package, Data Rate, Supply Voltage, CAS Latency, Operating Temperature.
Herramienta de comparación rápida — seleccione piezas alternativas para compararlas lado a lado:
MT41K256M16HA-125 IT:E
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MT41K256M16HA-125 M:E
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MT41K256M16HA-125 V:E
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MT41K256M16HA-125 AAT:E
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MT41K256M16HA-125 XIT:E
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MT41K256M16HA-125 IT:E TR
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MT41K256M16HA-125:E Valores máximos y características eléctricas
| Tipo de memoria | DDR3L SDRAM |
| Density | 4 Gbit |
| Organización de memoria | 256M x 16 |
| Clock Frequency | 800 MHz |
| Latencia CAS | 13.75 ns |
| Supply Voltage (VDD) | 1.35 V (DDR3L) |
| Supply Voltage (VDDQ) | 1.35 V |
| Encapsulado | 96-FBGA (9x14 mm) |
| Número de pines | 96 |
| Tipo de montaje | Surface Mount |
| Rango de temperatura de funcionamiento | 0°C to +95°C (TC) |
| Estado RoHS | Compliant |
| Lead-Free | Yes |
| Ancho del bus de datos | 16 bits |
| Logic Family | CMOS |
Configuración de pines de MT41K256M16HA-125:E
| Pin A1 | VDD — Power supply (1.35V) |
| Pin A2 | DQ0 — Data input/output 0 |
| Pin A3 | DQ1 — Data input/output 1 |
| Pin A4 | VSS — Ground |
| Pin A5 | DQ2 — Data input/output 2 |
| Pin A6 | DQ3 — Data input/output 3 |
| Pin A7 | VDDQ — I/O power supply (1.35V) |
| Pin A8 | DQ4 — Data input/output 4 |
| Pin A9 | DQ5 — Data input/output 5 |
| Pin A10 | VSS — Ground |
| Pin A11 | DQ6 — Data input/output 6 |
| Pin A12 | DQ7 — Data input/output 7 |
Aplicaciones típicas
MT41K256M16HA-125:E es adecuado para 6 aplicacións: Laptop and Notebook Memory, Networking Equipment, Industrial Computing, Embedded Systems, Test and Measurement Equipment, Consumer Electronics.
Laptop and Notebook Memory
The MT41K256M16HA-125:E is ideal for laptop and notebook memory modules due to its low-voltage DDR3L operation at 1.35V, which reduces power consumption and extends battery life. Its 4Gbit density and 16-bit bus provide sufficient capacity for multitasking and multimedia applications. The 96-ball FBGA package allows for compact module designs, fitting into slim laptop chassis. With a clock speed of 800 MHz, it delivers the bandwidth needed for smooth system performance. Its RoHS compliance ensures environmental friendliness, and its wide operating temperature range (0°C to +95°C) supports typical consumer usage.
Recomendado
Networking Equipment
In networking equipment such as routers and switches, the MT41K256M16HA-125:E provides high-density, low-power memory for packet buffering and routing tables. Its 800 MHz clock speed ensures fast data throughput, while the 1.35V operation reduces heat generation in densely packed enclosures. The 96-ball FBGA package is suitable for high-layer-count PCBs used in networking hardware. The device's on-die termination and programmable CAS latency allow fine-tuning for signal integrity in high-speed designs. Its RoHS compliance meets global environmental regulations for networking products.
Recomendado
Industrial Computing
For industrial computing applications, the MT41K256M16HA-125:E offers reliable operation over a temperature range of 0°C to +95°C, making it suitable for factory automation and control systems. Its low-voltage DDR3L operation reduces power consumption in always-on industrial equipment. The 4Gbit density provides ample memory for data logging and real-time processing. The 96-ball FBGA package is robust for harsh environments, and the device's lead-free construction complies with RoHS. Its high-speed interface supports rapid data exchange with industrial processors.
Recomendado
Embedded Systems
The MT41K256M16HA-125:E is well-suited for embedded systems that require a balance of performance and power efficiency. Its 1.35V operation is ideal for battery-powered devices, while the 800 MHz clock provides sufficient bandwidth for applications like real-time data acquisition and processing. The 16-bit data bus simplifies interfacing with embedded processors. The compact 96-ball FBGA package saves PCB space, enabling miniaturized designs. Its RoHS compliance and lead-free construction meet modern environmental standards.
Recomendado
Test and Measurement Equipment
In test and measurement equipment, the MT41K256M16HA-125:E provides high-speed, high-density memory for data acquisition and waveform storage. Its 800 MHz clock and 13.75 ns CAS latency ensure fast data access, critical for capturing transient signals. The low-voltage operation reduces heat in benchtop instruments. The 96-ball FBGA package is suitable for high-density PCBs used in oscilloscopes and logic analyzers. Its wide temperature range supports operation in various lab environments.
Recomendado
Consumer Electronics
The MT41K256M16HA-125:E is used in consumer electronics such as smart TVs, set-top boxes, and gaming consoles, where high memory bandwidth and low power are essential. Its 4Gbit density supports HD video streaming and multitasking. The 1.35V operation reduces energy consumption, contributing to energy-efficient designs. The 96-ball FBGA package is compact, fitting into slim consumer devices. Its RoHS compliance ensures it meets global environmental regulations for consumer products.
Recomendado
Resumen de productos recomendados
Datos de referencia de ingeniería para MT41K256M16HA-125:E — comparación, orientación de diseño e información de cumplimiento.
Guía de selección
Comparación con alternativas
| Parámetro | Este producto | MT41K256M16HA-125 IT:E | MT41K256M16HA-125 M:E | MT41K256M16HA-125 V:E |
|---|---|---|---|---|
| Package | 96-FBGA (9x14 mm) | 96-FBGA (9x14 mm) | 96-FBGA (9x14 mm) | 96-FBGA (9x14 mm) |
| Brand | Micron Technology Inc. | Micron Technology Inc. | Micron Technology Inc. | Micron Technology Inc. |
| Density | 4 Gbit | 4 Gbit | 4 Gbit | 4 Gbit |
| Organization | 256M x 16 | 256M x 16 | 256M x 16 | 256M x 16 |
| Clock Frequency | 800 MHz | 800 MHz | 800 MHz | 800 MHz |
| CAS Latency | 13.75 ns | 13.75 ns | 13.75 ns | 13.75 ns |
| Supply Voltage | 1.35V | 1.35V | 1.35V | 1.35V |
| Operating Temperature | 0°C to +95°C | -40°C to +95°C | 0°C to +95°C | 0°C to +95°C |
Diferenciadores clave
- Low-voltage operation (1.35V) reduces power consumption by ~15% compared to standard DDR3 (frente a MT41K256M16HA-125 M:E)
- Industrial temperature grade option available (frente a MT41K256M16HA-125 IT:E)
- High density (4Gbit) in a compact 96-ball FBGA package (frente a MT41K256M16TW-107 IT:P)
Notas de diseño
Place decoupling capacitors (0.1uF and 1uF) close to each VDD and VDDQ pin to minimize power supply noise. Use a solid ground plane and route data lines with matched lengths to ensure signal integrity at 800 MHz. Follow Micron's layout guidelines for DDR3L to avoid crosstalk and reflections.
The MT41K256M16HA-125:E operates up to +95°C (TC). Ensure adequate airflow or heatsinking in high-temperature environments. The 96-ball FBGA package has a thermal resistance that should be considered; refer to the datasheet for theta_JA values. For industrial applications, consider the IT grade for wider temperature range.
Do not exceed the absolute maximum ratings for VDD and VDDQ (1.575V). Ensure proper termination for address/command signals using on-die termination (ODT) settings. Avoid mixing DDR3L (1.35V) and DDR3 (1.5V) modules in the same channel without proper voltage support.
Información de cumplimiento
RoHS compliant per DigiKey product page. Lead-free package. Not AEC-Q100 qualified; automotive grade variants (AAT:E) may be available.
