MT41K256M16RE-15E:D - 4Gb DDR3L SDRAM 256Mx16 | Micron
N.º de pieza: MT41K256M16RE-15E:D ✓ Activo| Cant. | Precio unitario | Total |
|---|---|---|
| 1 | $12.5 | $12,50 |
| 10 | $11.2 | $112,00 |
| 100 | $9.8 | $980,00 |
| 500 | $8.5 | $4.250,00 |
| 1.000 | $7.2 | $7.200,00 |
MT41K256M16RE-15E:D Descripción general
DDR3L (Low Voltage DDR3) is a type of synchronous dynamic random-access memory (SDRAM) that operates at 1.35V, reducing power consumption by about 15% compared to standard 1.5V DDR3. It is part of the DDR3 SDRAM family, which uses double data rate signaling to transfer data on both edges of the clock, achieving high bandwidth. DDR3L is commonly used in mobile devices, embedded systems, and servers where power efficiency is critical.
Key features include a 4Gb density, 16-bit data bus, 667 MHz clock speed (PC3L-10600), and an access time of 13.5 ns. The device supports on-die termination (ODT), programmable CAS latency, and burst lengths of 8 and 4. It operates over a temperature range of -40°C to 95°C (TC) for the industrial variant, making it suitable for harsh environments.
The MT41K256M16RE-15E:D uses a 30nm DRAM process technology, enabling high density with low power. It features a 1.35V core and I/O supply, with a separate VDDQ for improved signal integrity. The device includes auto-refresh and self-refresh modes for power saving, and supports DLL (delay-locked loop) for precise timing.
Typical applications include embedded computing, networking equipment, industrial automation, and automotive infotainment systems. Its low voltage and high density make it ideal for power-sensitive designs that require large memory capacity.
When designing with this device, ensure proper decoupling of the VDD and VDDQ pins with 0.1uF and 1uF capacitors. The DDR3L interface requires careful PCB layout to maintain signal integrity, including matched trace lengths and controlled impedance.
Alternativas directas para MT41K256M16RE-15E:D — mismo encapsulado, compatible pin a pin. Se excluyen las piezas de otro encapsulado que requieren retrabajo de la PCB.
Variantes de esta serie
Modelos de la misma serie compatibles directamente con MT41K256M16RE-15E:D (mismo factor de forma y huella) — difiere en CAS Latency, Package, Data Rate, Operating Temperature, Supply Voltage.
Herramienta de comparación rápida — seleccione piezas alternativas para compararlas lado a lado:
MT41K256M16RE-125:D
✅ Sustitución directa✓ En stock
$4.19 / unidad
Ver hoja de datos →MT41K256M16HA-125:E
✅ Sustitución directa✓ En stock
$3.1 / unidad
Ver hoja de datos →MT41K256M16HA-107:E
✅ Sustitución directa✓ En stock
$5 / unidad
Ver hoja de datos →MT41K256M16RE-15E IT:D
✅ Sustitución directa📋 Alternativa de referencia (no en el catálogo)
MT41K256M16RE-15E:D
✅ Sustitución directa✓ En stock
$7.2 / unidad
Ver hoja de datos →MT41K256M16RE-15E:D
✅ Sustitución directa✓ En stock
$7.2 / unidad
Ver hoja de datos →MT41K256M16RE-15E:D Valores máximos y características eléctricas
| Tipo de memoria | SDRAM - DDR3L |
| Tamaño de memoria | 4Gb (256M x 16) |
| Velocidad de datos | 667 MHz (DDR3L-1333) |
| Access Time | 13.5 ns |
| Tensión de alimentación | 1.283 V to 1.45 V (nominal 1.35 V) |
| Encapsulado | 96-FBGA (10x14 mm) |
| Tipo de montaje | Surface Mount |
| Temperatura de funcionamiento | -40°C to 95°C (TC) |
| Interfaz | Parallel |
| Organización de memoria | 256M x 16 |
| Latencia CAS | 11 (typical) |
| Burst Length | 8, 4 |
| Número de pines | 96 |
| Estado RoHS | Compliant |
| Lead-Free | Yes |
Configuración de pines de MT41K256M16RE-15E:D
| Pin A1 | VDD — Power supply (1.35V) |
| Pin A2 | DQ0 — Data input/output 0 |
| Pin A3 | DQ1 — Data input/output 1 |
| Pin A4 | VSS — Ground |
| Pin A5 | DQ2 — Data input/output 2 |
| Pin A6 | DQ3 — Data input/output 3 |
| Pin A7 | VDDQ — I/O power supply (1.35V) |
| Pin A8 | DQ4 — Data input/output 4 |
| Pin A9 | DQ5 — Data input/output 5 |
| Pin A10 | VSS — Ground |
| Pin A11 | DQ6 — Data input/output 6 |
| Pin A12 | DQ7 — Data input/output 7 |
| Pin B1 | VDD — Power supply (1.35V) |
| Pin B2 | DQ8 — Data input/output 8 |
| Pin B3 | DQ9 — Data input/output 9 |
| Pin B4 | VSS — Ground |
| Pin B5 | DQ10 — Data input/output 10 |
| Pin B6 | DQ11 — Data input/output 11 |
| Pin B7 | VDDQ — I/O power supply (1.35V) |
| Pin B8 | DQ12 — Data input/output 12 |
| Pin B9 | DQ13 — Data input/output 13 |
| Pin B10 | VSS — Ground |
| Pin B11 | DQ14 — Data input/output 14 |
| Pin B12 | DQ15 — Data input/output 15 |
Aplicaciones típicas
MT41K256M16RE-15E:D es adecuado para 6 aplicacións: Embedded Computing, Networking Equipment, Industrial Automation, Automotive Infotainment, Medical Devices, Consumer Electronics.
Embedded Computing
The MT41K256M16RE-15E:D provides high-density, low-power memory for embedded systems such as single-board computers and industrial PCs. Its 4Gb capacity and 16-bit interface allow efficient data processing, while the 1.35V operation reduces power consumption, extending battery life in portable devices. The industrial temperature range ensures reliable operation in harsh environments.
Recomendado
Networking Equipment
In networking equipment such as routers and switches, the MT41K256M16RE-15E:D offers the high bandwidth and low latency required for packet buffering and forwarding. Its 667 MHz data rate and 16-bit bus provide sufficient throughput for gigabit Ethernet applications. The low voltage operation helps manage thermal dissipation in dense networking hardware.
Recomendado
Industrial Automation
The MT41K256M16RE-15E:D is ideal for industrial automation systems that require reliable memory for control algorithms and data logging. Its industrial temperature range (-40°C to 95°C) ensures operation in factory environments. The 1.35V supply reduces power consumption, and the 96-ball FBGA package is robust for vibration-prone applications.
Recomendado
Automotive Infotainment
For automotive infotainment systems, the MT41K256M16RE-15E:D provides high-density memory for navigation, multimedia, and connectivity features. Its low power consumption is crucial for vehicle battery life, and the industrial temperature range supports under-hood and cabin environments. The 16-bit interface simplifies PCB design in space-constrained head units.
Recomendado
Medical Devices
In medical devices such as patient monitors and diagnostic equipment, the MT41K256M16RE-15E:D offers reliable, low-power memory for data acquisition and processing. Its high density supports complex algorithms, while the 1.35V operation reduces heat generation, which is critical for patient safety. The industrial temperature range ensures consistent performance in clinical settings.
Recomendado
Consumer Electronics
The MT41K256M16RE-15E:D is used in consumer electronics like smart TVs, set-top boxes, and gaming consoles, where high bandwidth and low power are essential. Its 4Gb capacity supports HD video streaming and multitasking. The 1.35V supply helps meet energy efficiency standards, and the compact FBGA package fits slim device designs.
Recomendado
Resumen de productos recomendados
Datos de referencia de ingeniería para MT41K256M16RE-15E:D — comparación, orientación de diseño e información de cumplimiento.
Guía de selección
Comparación con alternativas
| Parámetro | Este producto | MT41K256M16RE-125:D | MT41K256M16HA-125:E | MT41K256M16HA-107:E |
|---|---|---|---|---|
| Package | 96-FBGA (10x14) | 96-FBGA (10x14) | 96-FBGA (10x14) | 96-FBGA (10x14) |
| Brand | Micron Technology | Micron Technology | Micron Technology | Micron Technology |
| Memory Size | 4Gb (256M x 16) | 4Gb (256M x 16) | 4Gb (256M x 16) | 4Gb (256M x 16) |
| Data Rate | 667 MHz (DDR3L-1333) | 800 MHz (DDR3L-1600) | 800 MHz (DDR3L-1600) | 933 MHz (DDR3L-1866) |
| Supply Voltage | 1.35V | 1.35V | 1.35V | 1.35V |
| Access Time | 13.5 ns | 13.5 ns | 13.5 ns | 13.5 ns |
| Operating Temperature | -40°C to 95°C | -40°C to 95°C | -40°C to 95°C | -40°C to 95°C |
| RoHS | Compliant | Compliant | Compliant | Compliant |
Diferenciadores clave
- Low voltage operation (1.35V) (frente a MT41K256M16HA-125:E)
- Industrial temperature range (frente a MT41K256M16RE-125:D)
- Wide availability (frente a MT41K256M16HA-107:E)
Notas de diseño
For DDR3L memory, maintain controlled impedance of 40-50 ohms for data lines and 50-60 ohms for address/control lines. Keep trace lengths matched within 100 mils to ensure signal integrity. Use a solid ground plane and place decoupling capacitors (0.1uF and 1uF) close to each VDD and VDDQ pin.
The MT41K256M16RE-15E:D requires a clean 1.35V supply. Use a low-dropout regulator or a switching regulator with low ripple. Ensure the power supply can handle peak current spikes during refresh and burst operations. Add bulk capacitance (10uF) near the memory device to stabilize voltage.
Although the device operates at low voltage, ensure adequate airflow or heatsinking in high-temperature environments. The industrial temperature range is -40°C to 95°C, but junction temperature should be kept below 105°C for reliability. Use thermal vias under the FBGA package to improve heat dissipation.
Información de cumplimiento
RoHS compliant and lead-free per datasheet. AEC-Q100 not applicable for DRAM. REACH and conflict minerals status not specified in provided data.
