K3K8K80BM-JGCT vs K3LK4K40CM-BGCP مقایسه
مقایسه دقیق کنار به کنار K3K8K80BM-JGCT توسط Samsung Electronics و K3LK4K40CM-BGCP توسط Samsung Electronics. مشخصات کلیدی، پارامترهای الکتریکی، بستهبندی، وضعیت چرخه عمر، قیمتگذاری و موجودی را مقایسه کنید تا بهترین قطعه را برای نیازهای طراحی خود تعیین کنید.
Samsung Electronics
K3K8K80BM-JGCT - Samsung LPDDR DRAM Memory IC | Samsung Electronics
K3K8K80BM-JGCT ✓ فعالمقایسه مشخصات
| پارامتر | K3K8K80BM-JGCT | K3LK4K40CM-BGCP |
|---|---|---|
| برند | Samsung Electronics | Samsung Electronics |
| دستهبندی | Memory ICs | DRAM |
| وضعیت چرخه عمر | فعال | فعال |
| Manufacturer | Samsung Electronics | — |
| Product Family | K3K mobile DRAM (LPDDR) component series | — |
| نوع حافظه | Low Power DRAM (LPDDR) component | LPDDR5 SDRAM |
| Density | [DATA_NEEDED: die density in Gb] | 96 Gb (12 GB) |
| سازمان | [DATA_NEEDED: x8/x16 organization] | 1536M x 64 |
| رابط | [DATA_NEEDED: LPDDR4X or LPDDR5] | LPDDR5 (JEDEC) |
| Maximum Data Rate | [DATA_NEEDED: Mbps] | — |
| Supply Voltage (VDD) | [DATA_NEEDED: core supply voltage] | 1.05 V |
| Supply Voltage (VDDQ) | [DATA_NEEDED: I/O supply voltage] | — |
| Package Type | FBGA (Ball Grid Array) | — |
| Ball Count | [DATA_NEEDED: package ball count] | — |
| نوع نصب | Surface Mount | Surface Mount |
| دمای کاری | [DATA_NEEDED: operating temperature range] | [DATA_NEEDED: Operating Temperature] |
| Speed Grade Suffix | J (per Samsung speed-grade coding) | — |
| Packing Suffix | CT (per Samsung packing-code convention) | — |
| وضعیت RoHS | [DATA_NEEDED: RoHS compliance] | [DATA_NEEDED: RoHS Status] |
| سطح MSL | [DATA_NEEDED: moisture sensitivity level] | — |
| نرخ داده | — | 6400 Mbps per pin |
| بستهبندی | — | 496-ball FBGA |
| Access Time / CAS Latency | — | [DATA_NEEDED: CAS Latency] |
| Refresh Scheme | — | Per-bank / all-bank refresh |
| Power-Down Modes | — | Deep sleep / power-down supported |
| Application Segment | — | Mobile, embedded, computing modules |
| Packaging | — | [DATA_NEEDED: standard packing quantity] |