K9DUGY8S7M vs K9PKGY8S7M-CCK0 مقایسه
مقایسه دقیق کنار به کنار K9DUGY8S7M توسط Samsung Electronics و K9PKGY8S7M-CCK0 توسط Samsung Electronics. مشخصات کلیدی، پارامترهای الکتریکی، بسته‌بندی، وضعیت چرخه عمر، قیمت‌گذاری و موجودی را مقایسه کنید تا بهترین قطعه را برای نیازهای طراحی خود تعیین کنید.
Samsung Electronics
K9DUGY8S7M - Samsung V-NAND Flash Memory | Samsung Electronics
K9DUGY8S7M ✓ فعال
مقایسه مشخصات
| پارامتر | K9DUGY8S7M | K9PKGY8S7M-CCK0 |
|---|---|---|
| برند | Samsung Electronics | Samsung Electronics |
| دسته‌بندی | Memory ICs | Memory ICs |
| وضعیت چرخه عمر | فعال | فعال |
| Manufacturer | Samsung Electronics | Samsung Electronics |
| نوع حافظه | NAND Flash (V-NAND, 3D) | NAND Flash |
| Family | K9DUG-series NAND | — |
| Density | [DATA_NEEDED: density] | — |
| سازمان | [DATA_NEEDED: organization] | — |
| ولتاژ تغذیه | [DATA_NEEDED: supply voltage] | [DATA_NEEDED: supply voltage] |
| نوع رابط | [DATA_NEEDED: interface type] | — |
| Page Size | [DATA_NEEDED: page size] | [DATA_NEEDED: page size] |
| Block Size | [DATA_NEEDED: block size] | [DATA_NEEDED: block size] |
| Program/Erase Cycles | [DATA_NEEDED: p/e cycles] | [DATA_NEEDED: P/E cycle endurance] |
| Access Time / tR | [DATA_NEEDED: access time] | — |
| بسته‌بندی | [DATA_NEEDED: package code] | BGA |
| نوع نصب | Surface Mount | Surface Mount |
| دمای کاری | [DATA_NEEDED: operating temperature] | [DATA_NEEDED: operating temperature range] |
| وضعیت RoHS | Compliant | Lead free / RoHS compliant |
| سطح MSL | [DATA_NEEDED: MSL level] | — |
| Memory Capacity | — | 128 Gb (16 GB) |
| Cell Architecture | — | 3D V-NAND, MLC (2 bits/cell) |
| V-NAND Layers | — | 24 layers |
| رابط | — | Asynchronous/toggle-mode NAND bus (per Samsung V-NAND family) |
| Application Domain | — | Enterprise SSD (e.g., Samsung 845DC Pro) |
| Access Time (tR) | — | [DATA_NEEDED: read cycle time] |
| Data Retention | — | [DATA_NEEDED: retention specification] |