K9KUGY8J7C-BCK0 vs K9JUGY8J5C-CCK0 مقایسه
مقایسه دقیق کنار به کنار K9KUGY8J7C-BCK0 توسط Samsung Electronics و K9JUGY8J5C-CCK0 توسط Samsung Electronics. مشخصات کلیدی، پارامترهای الکتریکی، بسته‌بندی، وضعیت چرخه عمر، قیمت‌گذاری و موجودی را مقایسه کنید تا بهترین قطعه را برای نیازهای طراحی خود تعیین کنید.
Samsung Electronics
K9KUGY8J7C-BCK0 - 1Tb TLC NAND Flash Memory | Samsung Electronics
K9KUGY8J7C-BCK0 ✓ فعالمقایسه مشخصات
| پارامتر | K9KUGY8J7C-BCK0 | K9JUGY8J5C-CCK0 |
|---|---|---|
| برند | Samsung Electronics | Samsung Electronics |
| دسته‌بندی | Memory ICs | Memory ICs |
| وضعیت چرخه عمر | فعال | فعال |
| نوع حافظه | NAND Flash (TLC V-NAND) | NAND Flash - V-NAND (TLC) |
| Density | 1 Tb | 1 Tb (128 GB) |
| سازمان | [DATA_NEEDED: page/block organization] | [DATA_NEEDED: page/block organization] |
| Cell Type | TLC (3 bits/cell) | TLC (Triple-Level Cell) |
| نوع رابط | [DATA_NEEDED: toggle DDR / ONFI mode] | — |
| Supply Voltage (VCC) | [DATA_NEEDED: VCC range in V] | [DATA_NEEDED: VCC range] |
| Supply Voltage (VCCQ) | [DATA_NEEDED: VCCQ range in V] | [DATA_NEEDED: VCCQ range] |
| Page Size | [DATA_NEEDED: page size in KB] | — |
| Block Size | [DATA_NEEDED: block size] | — |
| Program/Erase Cycles | [DATA_NEEDED: P/E endurance] | — |
| Package Type | BGA | — |
| Package Code | [DATA_NEEDED: package code / ball count] | — |
| دمای کاری | [DATA_NEEDED: temperature range in C] | [DATA_NEEDED: temperature range] |
| نوع نصب | Surface Mount | Surface Mount |
| وضعیت RoHS | Compliant | [DATA_NEEDED: RoHS status] |
| Grade Suffix | BCK0 | — |
| Manufacturer | Samsung Electronics | Samsung Electronics |
| Technology Generation | — | V6 (6th-gen V-NAND, 128-layer) |
| رابط | — | [DATA_NEEDED: toggle/ONFI mode] |
| بسته‌بندی | — | [DATA_NEEDED: BGA package code and dimensions] |
| Read Latency | — | [DATA_NEEDED: tR] |
| Program Time | — | [DATA_NEEDED: tPROG] |
| Endurance (P/E cycles) | — | [DATA_NEEDED: rated P/E cycles] |
| سطح MSL | — | [DATA_NEEDED: moisture sensitivity level] |