MRF5S19100HSR5 vs MRF5S19100HR5 مقایسه
مقایسه دقیق کنار به کنار MRF5S19100HSR5 توسط NXP Semiconductors و MRF5S19100HR5 توسط NXP Semiconductors. مشخصات کلیدی، پارامترهای الکتریکی، بسته‌بندی، وضعیت چرخه عمر، قیمت‌گذاری و موجودی را مقایسه کنید تا بهترین قطعه را برای نیازهای طراحی خود تعیین کنید.
مقایسه مشخصات
| پارامتر | MRF5S19100HSR5 | MRF5S19100HR5 |
|---|---|---|
| برند | NXP Semiconductors | NXP Semiconductors |
| دسته‌بندی | MOSFETs | MOSFETs |
| وضعیت چرخه عمر | فعال | Obsolete |
| نوع ترانزیستور | N-Channel RF Power MOSFET (LDMOS) | LDMOS (RF Power) |
| Technology | NXP HV5 LDMOS (5th generation, enhancement-mode) | N-Channel MOSFET |
| Drain-Source Voltage (VDS) | 65 V (maximum) | — |
| Operating Drain Voltage | 28 V (typical) | — |
| Output Power (Pout) | 22 W (typical average, W-CDMA) | 22 W |
| Test Condition Power | 100 W peak (CW test condition) | — |
| Power Gain (Gp) | 13.9 dB (typical at 1.96 GHz) | — |
| Drain Efficiency | 28 percent (typical, W-CDMA Class-AB) | — |
| Operating Frequency | 1.93 GHz to 1.99 GHz | — |
| Test Frequency | 1.96 GHz | — |
| بسته‌بندی | NI-780S (ceramic, flanged, bolt-down) | — |
| نوع نصب | Chassis / flange mount with screw | Chassis Mount / Flange |
| Input Impedance | 50 ohm (internally matched) | — |
| Input Bias Type | Class-AB (gate biased above pinch-off) | — |
| وضعیت RoHS | [DATA_NEEDED: RoHS status] | [DATA_NEEDED: rohs status] |
| دمای کاری | -40 C to +200 C (junction, with derating) | — |
| Frequency Band | — | 1.93 GHz to 1.99 GHz |
| Power Gain at Test | — | 13.9 dB |
| Drain-Source Voltage Rated (Vdss) | — | 65 V |
| Test Voltage (Vd) | — | 28 V |
| Test Current (Id) | — | 1 A |
| بسته‌بندی / کیس | — | NI-780 (3-pin ceramic flange) |
| Supplier Device Package | — | NI-780 |
| Configuration | — | Single N-Channel |
| Part Status | — | Obsolete |
| Lead Finish | — | [DATA_NEEDED: lead finish] |
| ESD Protection | — | Yes (per datasheet) |
| Channel Temperature (Tj max) | — | [DATA_NEEDED: junction temp absolute maximum] |