RTAX2000S-1CQ352PROTO vs RTAX2000D-1CQ352B مقایسه

مقایسه دقیق کنار به کنار RTAX2000S-1CQ352PROTO توسط Microchip Technology و RTAX2000D-1CQ352B توسط Microchip Technology. مشخصات کلیدی، پارامترهای الکتریکی، بسته‌بندی، وضعیت چرخه عمر، قیمت‌گذاری و موجودی را مقایسه کنید تا بهترین قطعه را برای نیازهای طراحی خود تعیین کنید.

Microchip Technology
RTAX2000S-1CQ352PROTO RTAX2000S-1CQ352PROTO - Rad-Tolerant FPGA 2M Gates | Microchip

RTAX2000S-1CQ352PROTO - Rad-Tolerant FPGA 2M Gates | Microchip

RTAX2000S-1CQ352PROTO ✓ فعال
Microchip Technology
RTAX2000D-1CQ352B RTAX2000D-1CQ352B - 2M-Gate Rad-Tolerant FPGA | Microchip

RTAX2000D-1CQ352B - 2M-Gate Rad-Tolerant FPGA | Microchip

RTAX2000D-1CQ352B ✓ فعال

مقایسه مشخصات

پارامتر RTAX2000S-1CQ352PROTO RTAX2000D-1CQ352B
برند Microchip Technology Microchip Technology
دسته‌بندی FPGA & CPLD FPGA & CPLD
وضعیت چرخه عمر فعال فعال
Family RTAX-S Radiation-Tolerant FPGA RTAX-S/SL and RTAX-DSP (RTAX2000D)
Series RTAX2000S —
Configurable Logic Blocks (CLBs) 21504 —
Equivalent System Gates 2000000 2,000,000
Process Technology CMOS —
Programmability Type Antifuse (one-time programmable) —
Configuration Live at power-up, single chip Live at power-up, no external configuration device (antifuse)
Speed Grade -1 -1
Device Designation PROTO (prototyping / engineering) —
Temperature Grade C (commercial) —
بسته‌بندی CQFP352 (ceramic quad flat pack, 352 leads) 352-pin Ceramic Column Grid Array (CQ352)
نوع نصب Surface Mount Surface Mount (ceramic column grid array)
Radiation Tolerance Radiation-tolerant (space-flight qualified family) —
ولتاژ تغذیه [DATA_NEEDED: core supply voltage] —
Maximum I/O Count [DATA_NEEDED: user I/O count for CQ352 package] —
Embedded SRAM [DATA_NEEDED: embedded SRAM block capacity] —
دمای کاری [DATA_NEEDED: operating temperature range] —
وضعیت RoHS [DATA_NEEDED: RoHS status] —
Technology — Antifuse (nonvolatile), Digital CMOS
CLBs (Logic Cells) — 19,712 CLBs / 29,568 logic cells (per family organization)
DSP Mathblocks — Up to 120 (18-bit x 18-bit MAC)
DSP Performance — 125 MHz 18-bit x 18-bit multiply-accumulate
Embedded Memory — Up to 540 kbits SRAM with optional EDAC
Total Ionizing Dose — 300 krad (Si) functional / 200 krad (Si) with operation
Core Supply Voltage — 1.5 V nominal (1.425 V to 1.575 V)
Temperature Range — Commercial (C)
Routing Features — Segmentable clocks, chip-wide highway routing, carry logic
Embedded SRAM Features — Built-in FIFO control logic
Application Domain — Space-flight, radiation-tolerant

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