DRAM
Produits (62)
AS4C512M16D4-75BCN - 8Gb DDR4 SDRAM 2666MT/s | Alliance Memory
The Alliance Memory AS4C512M16D4-75BCN is an 8 Gigabit DDR4 SDRAM organized as 512M words x 16 bits, operating at 2666 MT/s (DDR4-2666, 1.333 GHz clock) from a single 1.2V supply, housed in a 96-ball FBGA package measuring 7.5mm x 13mm. DDR4 SDRAM (Double Data Rate 4 Synchronous Dynamic Random-Access Memory) is the fourth generation of high-bandwidth volatile memory. It transfers data on both edges of the clock, uses an 8n-prefetch architecture to achieve high throughput, and operates at a lower 1.2V core supply than DDR3's 1.5V, reducing dynamic power. Within the memory hierarchy it sits at the DRAM level of the semiconductor memory family (SDRAM -> DDR4 SDRAM -> memory IC), serving as the main working memory in embedded, industrial, and networking systems. Key features include the 8Gb density in a wide x16 organization, a commercial temperature range of 0C to +95C, sixteen internal banks, programmable CAS latency, on-die termination (ODT) for signal integrity, and auto-refresh/self-refresh power-saving modes. Alliance Memory positions this family as a reliable drop-in, pin-for-pin-compatible replacement for numerous similar solutions, eliminating costly redesigns and part requalification. Technically, the 8n prefetch reads or writes an 8n-bit internal burst from the DRAM core and delivers eight n-bit transfers per half clock at the I/O pins. Bank group addressing, burst length control, and calibrated output drive support stable 2666 MT/s operation on standard memory controllers. Typical applications include embedded computing and industrial PC main memory, networking processor line cards, test equipment, and graphics/display systems that need a wide 16-bit data bus with 8Gb capacity. When designing with this device, place decoupling capacitors on every VDD/VDDQ ball pair, keep the 1.2V rail within tolerance, and follow the datasheet FBGA routing guidelines for length-matched address/command lines. This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in the manufacturer datasheet.
H58G46AK6PX033N - LPDDR5 16Gb 6400Mbps Automotive DRAM | SK hynix
The SK hynix H58G46AK6PX033N is a 16Gb (2GB) LPDDR5 SDRAM automotive-grade DRAM component with a x16 I/O organization, 6400 Mbps/pin data rate, and power rails of 1.8V (VDD2), 1.05V (VDDQ) and 0.5V (core VDD1), housed in a 315-ball FBGA package. The suffix N denotes the commercial/tray ordering option within the H58G46AK6PX033 family. LPDDR5 (Low Power Double Data Rate 5) is a JEDEC-standardized mobile and automotive memory interface belonging to the DRAM hierarchy: LPDDR5 -> SDRAM -> DRAM -> semiconductor memory IC. Compared with DDR4/DDR5, LPDDR5 optimizes power efficiency with lower I/O swing and deep power-down states, making it the dominant volatile memory for battery-powered and thermally constrained platforms, including automotive ADAS domain controllers. Key features of the H58G46AK6PX033 include the 6400 Mbps pin speed (LPDDR5-6400 class), a 16Gb density organized as x16, and automotive qualification for extended-reliability deployments such as infotainment, telematics, and ADAS memory subsystems. SK hynix LPDDR5 also implements bank-group architecture, on-die termination refinements, and a WCK clocking scheme that sustains high effective bandwidth at low power. The 315-ball FBGA footprint supports compact PCB layouts typical of compute modules and system-on-module designs. Architecturally, the device uses the LPDDR5 16b-channel style command/data interface with dual WCK clocks, DQS strobes per byte lane, and programmable drive strength. The 1.8V/1.05V/0.5V triple-rail scheme separates interface power from core power, enabling DVFS power management by the host memory controller. Typical applications include automotive ADAS domain controllers, digital cockpits and infotainment SoCs, industrial computing modules, edge AI accelerators, and high-performance mobile/consumer computing systems requiring 2GB LPDDR5 per component. Design consideration: verify the host SoC memory controller supports LPDDR5-6400 timing and that the 315-ball routing follows SK hynix length-matching and reference-plane guidance in the manufacturer datasheet. This page synthesizes verified distributor listings, drop-in alternative analysis, and procurement guidance not consolidated in the manufacturer datasheet.
H5AN8G4NAFR-PBC - 8Gb DDR4 SDRAM 1.2V | SK hynix
The SK hynix H5AN8G4NAFR-PBC is an 8Gb (gigabit) CMOS Double Data Rate 4 (DDR4) Synchronous DRAM organized as 2Gb x 4, operating at a nominal supply of 1.2 V (VDD and VDDQ = 1.2 V +/- 0.06 V) with a separate 2.5 V wordline pump supply (VPP), packaged in a 78-ball FBGA surface-mount package. DDR4 SDRAM is the fourth generation of double-data-rate synchronous dynamic random access memory, a member of the broader DRAM memory hierarchy that sits between cache memory (SRAM) and storage (NAND flash) in computing systems. DDR4 introduced bank groups, lower operating voltage, and higher data rates compared to DDR3, making it the dominant main-memory technology for servers, workstations, desktops, and embedded controllers. The H5AN8G4NAFR-PBC belongs to SK hynix's 8Gb DDR4 family (H5AN8G4NAFR-xxC for x4, H5AN8G8NAFR-xxC for x8, H5AN8G6NAFR-xxC for x16 organizations). Key features include 8Gb density in a single x4 component, 16 internal banks arranged in 4 bank groups (BG0-BG1 with BA0-BA1), a 17-bit row address (A0-A16), DLL-on operation, and on-die termination consistent with the JEDEC DDR4 SDRAM standard. The -PBC suffix identifies the speed bin and temperature/lead-free grade within the family; the datasheet speed-bin tables cover DDR4-1600, DDR4-1866, DDR4-2133, and DDR4-2400 operating points, with Geardown Mode considerations noted for the lower bins. Architecturally, the device uses SK hynix CMOS DRAM process technology with DDR4 bank-group pipelining, which increases effective data bandwidth by allowing back-to-back accesses to different bank groups without the full tRC row-cycle penalty. I/O signaling uses the DDR4 SSTL12 interface at VDDQ = 1.2 V with programmable drive strength and ODT settings defined in the mode registers. Typical applications are main-memory DIMMs and soldered-down memory subsystems for servers and data centers, industrial PCs and embedded controllers, networking equipment, and test/measurement platforms requiring large memory density and high bandwidth. Designers should consult the datasheet speed-bin table and IPP (DRAM package power) specification when planning power delivery; DDR4 VPP = 2.5 V (+0.25/-0.125 V) must be provided in addition to the 1.2 V core/I/O rail. Signal integrity at DDR4-2400 requires length-matched, ODT-tuned fly-by routing per the memory controller's design guide. This page adds distributor sourcing data, drop-in alternatives, and practical design notes beyond the manufacturer datasheet.
H5AN8G6NCJR-VKC - 8Gb DDR4 SDRAM 2666Mbps FBGA-96 | SK Hynix
The SK Hynix H5AN8G6NCJR-VKC is an 8Gb (512M x 16) DDR4 SDRAM operating at 2666 Mbps data rate, powered from a 1.14V to 1.26V supply and housed in a 96-ball FBGA package. It supports operating temperatures from 0C to +95C and integrates advanced DDR4 features including auto self-refresh, auto precharge, asynchronous reset, data mask, write leveling, CRC, dynamic on-die termination (ODT), and ZQ calibration. A DDR4 SDRAM (Double Data Rate 4 Synchronous Dynamic Random Access Memory) is a volatile memory IC that transfers data on both rising and falling clock edges, sitting within the memory hierarchy as DRAM -> synchronous DRAM -> DDR SDRAM -> DDR4 SDRAM -> semiconductor memory. DDR4 doubles the bandwidth of DDR3 while lowering operating voltage from 1.5V to 1.2V, making it the dominant main-memory technology for computing and embedded systems. Key features of the H5AN8G6NCJR-VKC include the 8 Gbit density organized as 512 megawords x 16 bits, a 1.333 GHz clock rate delivering 2666 MT/s bandwidth per pin, and low operating currents (28 mA standby typical, 45 mA operating per JLCPCB data). The x16 organization with data-mask support simplifies byte-lane designs in embedded processors that lack full 64-bit memory controllers. Architecturally, the device is a CMOS DDR4 SDRAM from SK Hynix's H5AN8G6NCJR family (8Gb x16 -xxC speed grade), implementing bank-group architecture, programmable CAS latency, and dynamic ODT to maintain signal integrity at high data rates. ZQ calibration keeps output driver impedance accurate across temperature and voltage drift. Typical applications include embedded main memory for industrial PCs, networking equipment, set-top boxes, automotive infotainment (commercial temperature 0C to +95C), and memory modules requiring high density in a compact footprint. Design consideration: DDR4 signal integrity at 2666 Mbps requires length-matched fly-by routing of the clock and command/address bus, and proper termination per the memory controller's ODT settings; power distribution should target the 1.2V VDD rail with low-ESR bulk and high-frequency decoupling capacitors. This page synthesizes distributor pricing, same-family and cross-brand drop-in alternatives, and practical DDR4 design notes not found in the manufacturer datasheet alone. Pricing references are as of 2026-09-04.
H5AN8G8NAFR-PBC - 8Gb DDR4 SDRAM x8 1.2V | SK hynix
The SK hynix H5AN8G8NAFR-PBC is an 8Gb CMOS Double Data Rate 4 (DDR4) Synchronous DRAM organized as 1G x 8, operating from a 1.2V supply in a 78-ball FBGA package. It belongs to the H5AN8G4NAFR-xxC / H5AN8G8NAFR-xxC / H5AN8G6NAFR-xxC family, which SK hynix positions for main-memory applications requiring large memory density and high bandwidth. DDR4 SDRAM is the fourth generation of double-data-rate synchronous dynamic random-access memory, a class of volatile semiconductor memory that synchronizes data transfer to a clock and transfers data on both clock edges. In the system hierarchy it sits under SDRAM -> DRAM -> volatile memory ICs and serves as the primary working memory for CPUs, SoCs, and memory controllers in servers, desktops, notebooks, and embedded systems. Key features of this device include 8Gb density in a single x8 organization, a 1.2V core supply that lowers power versus DDR3, a 78-ball FBGA surface-mount package, and lead-free, halogen-free, RoHS-compliant construction. Internal banks support concurrent activation, and the DDR4 interface adds features such as bank-group architecture, DBI (data bus inversion), CA parity, and connectivity test (TEN) mode support noted in the datasheet. Technically, the device uses CMOS process technology with the standard DDR4 command set: ACTIVATE, READ, WRITE, REFRESH (including self-refresh), PRECHARGE, and Mode Register Set. Address inputs A0-A17 provide row addresses for ACTIVATE and column addresses for READ/WRITE, with A10/AP, A12/BC_n, RAS_n/A16, CAS_n/A15 and WE_n/A14 multiplexing additional functions per the SK hynix datasheet Rev. 1.2 (July 2017). Typical applications include PC and server main memory modules (UDIMM, RDIMM, SODIMM), embedded systems with DDR4 memory controllers, networking equipment, industrial computers, and set-top or smart-home platforms needing 8Gb-per-chip density and high bandwidth. A key design consideration: DDR4 requires careful length-matched routing, on-die-termination (ODT) configuration, and VTT termination on address/command lines; verify the memory controller supports the -PBC speed bin timings before layout. This page synthesizes verified datasheet data, distributor availability, drop-in alternatives, and practical DDR4 design notes not consolidated in the manufacturer datasheet.
H5ANAG4NBJR-UHC - 4Gb DDR4 SDRAM 1.6GHz FBGA-96 | SK hynix
The SK hynix H5ANAG4NBJR-UHC is a 4Gbit DDR4 SDRAM organized as 256M x16, operating from a 1.14V to 1.26V supply at data rates up to 1.6 GHz (DDR4-1600 class), housed in a 96-ball FBGA (PBGA96) package rated from -40C to +95C. DDR4 SDRAM (Double Data Rate 4 Synchronous Dynamic Random Access Memory) is the fourth-generation JEDEC-class DRAM technology that stores each bit as charge on a capacitor within a dense memory cell array. In the system memory hierarchy, the SDRAM sits below the memory controller in a CPU, FPGA, or SoC platform, providing the main working memory tier between caches and mass storage. The x16 organization means the device presents 16 data bits per access, which simplifies solderdown for embedded systems that do not need the full 64/72-bit server bus width. Key features of the H5ANAG4NBJR family include automatic self-refresh for data retention in low-power states, a data mask (DM) function for partial writes, an asynchronous reset input for rapid state initialization, dynamic on-die termination (ODT) for signal-integrity tuning, ZQ calibration for output driver impedance accuracy, write leveling for fly-by topology timing, and CRC protection on critical buses. These functions collectively relax board-level timing margins and support reliable operation over the extended industrial temperature range. Technically, the device operates from a nominal 1.2V VDD rail (1.14V to 1.26V tolerance), a significant reduction versus the 1.5V of DDR3, cutting dynamic I/O power. Internal banks are accessed through the DDR4 burst-oriented protocol, and the -UHC suffix denotes SK hynix speed/temperature grade coding; confirm the exact speed bin and CAS latency in the manufacturer datasheet for your controller configuration. Typical applications include embedded controllers, industrial automation modules, networking equipment, FPGA-based processing cards, computing modules, and firmware/data logging systems that require a soldered-down, x16, extended-temperature DRAM. Design consideration: DDR4 fly-by routing requires length-matched address/command traces, per-byte ODT tuning via ZQ calibration, and a clean 1.2V rail with adequate bulk and high-frequency decoupling; verify controller compatibility with the exact die revision. This page synthesizes distributor pricing, drop-in same-family alternatives, and practical DDR4 design notes not found in the manufacturer datasheet.
H5ANAG4NBJR-VKC - 16Gb DDR4 SDRAM FBGA-78 | SK hynix
The SK hynix H5ANAG4NBJR-VKC is a 16 gigabit DDR4 SDRAM in the NBJR FBGA-78 (7.5 mm x 11 mm) ball-grid-array package, built on SK hynix's advanced DDR4 DRAM process and speed-graded with the VKC binning code. As a member of the DDR4 SDRAM family, it targets main memory and buffering systems that need high density in a single-chip footprint. A DDR4 SDRAM is a synchronous dynamic random-access memory that transfers data on both clock edges (double data rate), synchronizing to a host memory controller through CK/CK# differential clocking. Within the memory hierarchy, DDR4 DRAM sits in the family of volatile semiconductor memory (DRAM -> SDRAM -> DDR SDRAM -> DDR4 SDRAM -> DDR5 SDRAM), and it remains the dominant main-memory technology in servers, workstations, and industrial compute platforms. Key features identified across the SK hynix NBJR DDR4 family include an extended operating temperature range from -40 C to +95 C case temperature with auto self-refresh, a data mask (DM) function for partial writes, an asynchronous reset function for fast state recovery, dynamic on-chip termination (ODT), ZQ calibration for output impedance matching, write leveling for fly-by topology signal integrity, and CRC (command/address parity) protection. The VKC suffix denotes the SK hynix commercial speed grade within the DDR4 binning system; exact speed-bin parameters are listed in the specifications table below where verified. Architecturally, the device uses an 8n-prefetch DDR4 core with bank groups, allowing burst transfers to be interleaved across banks for higher effective bandwidth while the internal core runs at a fraction of the I/O rate. DDR4 lowers the core operating voltage relative to DDR3, cutting memory subsystem power by roughly 20% for the equivalent bandwidth, per SK hynix DDR4 product literature. Typical applications include server DIMMs and memory modules, industrial computing and network processing line cards, embedded compute modules that support DDR4 memory-down designs, and test-and-measurement systems buffering high-rate data streams. The -40 C to +95 C industrial option makes the NBJR family especially relevant for outdoor telecom and factory-automation environments. Design consideration: maintain the DDR4 routing rules for fly-by command/address topology, and enable ZQ calibration and dynamic ODT per the JEDEC DDR4 specification to guarantee signal integrity at rated data rates; always consult the SK hynix part-number decoder to confirm speed bin, temperature grade, and package for the exact suffix ordered. This page synthesizes distributor stock data, drop-in family alternatives, and practical design notes in one place - information not consolidated in the raw manufacturer datasheet.
H5ANAG6NBJR-RDC - 16Gb DDR4 SDRAM 2666Mbps | SK hynix
The SK hynix H5ANAG6NBJR-RDC is a 16Gb CMOS Double Data Rate IV (DDR4) Synchronous DRAM organized as x16, delivering data rates up to 2666 Mbps in a compact FBGA (Ball Grid Array) surface-mount package. It operates from a 1.2V VDD supply, providing high bandwidth main memory with lower power consumption than previous generations. DDR4 SDRAM is the fourth generation of Double Data Rate synchronous dynamic random-access memory, the dominant main-memory technology for computers and embedded systems. As a volatile memory class within the broader DRAM hierarchy, DDR4 transfers data on both rising and falling edges of the clock, achieving double the bandwidth of DDR3 at the same clock rate while reducing operating voltage from 1.5V to 1.2V. SK hynix DDR4 SDRAMs offer fully synchronous operation referenced to both rising and falling edges of the clock, with all addresses and control inputs registered on the positive edge of the clock and data qualification via DQS strobes. The H5ANAG6NBJR-RDC offers 16Gb density per component, enabling large memory configurations with fewer devices. The -RDC speed grade supports 2666 Mbps operation, and the device conforms to the JEDEC DDR4 SDRAM standard. Internal bank grouping, burst chop, and on-die termination reduce signal-integrity burden on the memory controller. Per SK hynix product documentation, the 16Gb DDR4 family (H5ANAG4/8/6NCJR and related NBJR speed grades) targets main-memory applications requiring large memory density and high bandwidth. Typical applications include server main memory modules (RDIMM/LRDIMM), desktop PC DIMMs, networking and telecommunications equipment, industrial computing, and embedded systems based on x86 or ARM processors with DDR4 memory controllers. The x16 organization suits designs that require 16-bit data buses or are populating narrow channels. A key design consideration is signal integrity: DDR4 fly-by routing with on-die termination (ODT), length-matched traces, and reference voltage (VTT) termination quality directly determine the achievable data rate. Memory controllers must be trained for read/write leveling at 2666 Mbps operation. This page synthesizes verified distributor data, drop-in same-family alternatives, pricing tiers, and practical DDR4 design notes not consolidated in the manufacturer datasheet.
H5ANAG6NBJR-UHC - 4Gb DDR4 SDRAM x16 | SK Hynix
The SK Hynix H5ANAG6NBJR-UHC is a 4Gb DDR4 SDRAM organized as 256M x 16, fabricated in CMOS process technology and housed in a 96-ball PBGA (FBGA-96, TFBGA) lead-free and halogen-free package. The -UHC speed grade corresponds to the DDR4-2666 operating bin, supporting data rates up to 2666 Mbps/pin with CAS latency appropriate to that bin. DDR4 SDRAM (Double Data Rate fourth-generation synchronous dynamic random access memory) is the dominant main-memory technology for computing and embedded systems. Within the memory hierarchy it sits between CPU caches and storage, providing high-bandwidth volatile storage. DDR4 improved on DDR3 with lower operating voltage, bank-group architecture, and higher pre-fetch efficiency, making it the standard DRAM interface for industrial controllers, networking equipment, and embedded modules. Key features of the H5ANAG6NBJR family, as listed by distributor data, include auto self-refresh and an operating temperature range of -40C to +95C, dynamic on-chip termination (ODT), asynchronous reset, ZQ calibration, write leveling, data mask (DM) functionality, and CRC support. These features are aimed directly at robust high-speed signal integrity and reliability in industrial-grade designs. The x16 organization reduces the external device count required to assemble a given memory width, simplifying power distribution since only two power rails (VDD/VDDQ at 1.2V nominal for DDR4) are needed per rank. The multi-bank page-burst access architecture with auto/self-refresh supports both bandwidth-hungry streaming workloads and low-power retention modes. Typical applications include embedded computing modules (such as SoC FPGA boards), industrial automation controllers, networking line cards, and replacement sourcing for legacy BOMs. The industrial temperature option makes the part suitable for fanless and outdoor equipment where -40C cold-start is required. Design consideration: DDR4 fly-by routing with on-die termination requires careful length matching and ZQ resistor placement; always terminate VTT dynamically through ODT and validate timing margins at the target data rate across temperature. This page synthesizes distributor pricing, drop-in alternatives within the same H5ANAG6NBJR/H5AN4G6NBJR FBGA-96 family, and practical design notes not found in the manufacturer datasheet.
H5ANAG8NBJR-PBC - 16Gb DDR4 SDRAM x8, FBGA-78 | SK Hynix
The SK Hynix H5ANAG8NBJR-PBC is a 16Gb (2 GB) DDR4 SDRAM component organized as x8, operating from a 1.2 V supply in a 78-ball FBGA package (7.5 mm x 11 mm), designed for main-memory applications requiring large density and high bandwidth. The -PBC speed grade supports DDR4-2666 operation. DDR4 SDRAM is the fourth generation of double-data-rate synchronous DRAM, a form of volatile semiconductor main memory. Within the system hierarchy, DRAM sits between CPU caches and non-volatile storage, providing the high-bandwidth working memory for processors. DDR4 doubles the internal bank count of DDR3 to 16 banks (organized in 4 bank groups), adds a DBI/cyclic-redundancy-check (CRC) capability on the data bus, lowers operating voltage from 1.5 V/1.35 V to 1.2 V, and introduces bank-group architecture for improved effective bandwidth at the same clock rate. Key features of this device include 16 Gbit density, a x8 organization suited to ECC-capable and desktop/server memory arrays, 1.2 V core supply with programmable VDDQ, 8n prefetch architecture with bank-group parallelism, and on-die termination (ODT) for signal integrity at high data rates. The BJR die revision reflects SK Hynix's process refinements for yield and power. The PBC suffix encodes the speed/latency bin (DDR4-2666 class, CL19 typical module equivalence). The device uses a fly-by-terminated point-to-multipoint command/address topology per the DDR4 JEDEC-style interface, with a 1.2 V SSTL12 I/O signaling environment, DLL-based read capture, and programmable CAS latency and additive latency. Refresh includes normal 1x/2x/4x refresh modes and self-refresh for low-power retention. Typical applications include desktop and notebook UDIMM/SODIMM modules, server RDIMM and ECC-DIMM memory subsystems, industrial controllers and embedded x86/ARM boards with DDR4 memory controllers, networking and telecom line cards, and graphics/display processing platforms. Design consideration: DDR4 fly-by routing requires length-matched command/address traces with VTT termination, and the memory controller must be programmed with the correct speed bin, CL, and refresh settings from the device mode registers; always confirm the exact speed code against the SK Hynix datasheet before substitution. This page synthesizes verified distributor listings, drop-in alternatives across SK Hynix, Micron and Samsung FBGA-78 DDR4 components, and practical design notes not found in the manufacturer datasheet.
H5ANAG8NBJR-RDC - 16Gb DDR4 SDRAM 2Gx8 2666 | SK hynix
The SK hynix H5ANAG8NBJR-RDC is a 16Gb (2G x 8) CMOS Double Data Rate 4 (DDR4) Synchronous DRAM operating at 1.2V, housed in a 78-ball FBGA package. As part of SK hynix's 16Gb DDR4 SDRAM family, it delivers the large memory density and high bandwidth required by main memory subsystems in servers, workstations, and high-performance computing platforms. DDR4 SDRAM is a type of synchronous dynamic random-access memory that transfers data on both the rising and falling edges of the clock (double data rate), sitting within the hierarchy: DRAM -> synchronous DRAM -> DDR SDRAM -> DDR4 SDRAM -> memory IC -> semiconductor. DDR4 succeeded DDR3 with lower operating voltage (1.2V vs 1.5V), higher densities, bank groups, and improved signaling via DQS training and DBI (data bus inversion). Key features include fully synchronous operation referenced to both clock edges, an 8-bit-wide x8 organization with 2G addressable locations, and support for standard DDR4 features such as bank groups, CAS latency programming, and on-die termination (ODT). The -RDC speed grade ordering supports DDR4-2666-class data rates at the 1.2V VDD supply. Architecturally, the device uses a CMOS core with charge-storage DRAM cells that require periodic refresh, a hierarchical bank structure for concurrency, and a SSTL12 interface for high-speed signaling. Internal pipelining sustains full bandwidth at the rated clock while read/write CRC and CA parity options (per family datasheet) strengthen data integrity in server-class systems. Typical applications include server main memory DIMMs (RDIMM/LRDIMM/UDIMM), embedded computing modules, networking and storage controllers, and industrial or test systems requiring high-density memory. The x8 organization suits ECC-based designs where one bit-wide device per lane simplifies error correction. Design consideration: DDR4 routing requires length-matched address/command and data groups, reference voltages (VDDQ/2), and adherence to the JEDEC DDR4 signal integrity budget; fly-by routing of CA signals is standard on DIMM designs. This page synthesizes verified distributor data, drop-in SK hynix alternatives, and practical DDR4 design notes not found in a single manufacturer datasheet, providing engineers with a complete selection reference.
H5ANAG8NCR-PBC - 16Gb DDR4 SDRAM DRAM | SK hynix
The SK hynix H5ANAG8NCR-PBC is a 16Gb (2 GB) CMOS Double Data Rate 4 (DDR4) Synchronous DRAM component, ideally suited for main-memory applications that require large memory density and high bandwidth. The device is packaged in a standard FBGA-78 (78-ball Fine-Pitch Ball Grid Array, approximately 7.5 mm x 11 mm) surface-mount package and operates from a 1.2 V power supply typical of the DDR4 generation. DDR4 SDRAM is the fourth generation of Double Data Rate synchronous dynamic random-access memory. As a class of volatile memory ICs, DDR4 sits within the broader hierarchy of semiconductor memory: SDRAM, then DDR SDRAM generations (DDR, DDR2, DDR3, DDR4, DDR5). DDR4 transfers data on both clock edges, doubling effective bandwidth versus SDR memory, and adds bank groups, a lower 1.2 V operating voltage, and on-die termination compared with DDR3. Components like the H5ANAG8NCR-PBC are soldered onto memory modules (UDIMM, RDIMM, SO-DIMM) or directly onto motherboards as discrete down-memory in embedded designs. Key features of this device include its 16Gb monolithic die density, x8 organization supporting standard DDR4 read/write burst operations, JEDEC-compliant DDR4 interface timing, and lead-free, halogen-free RoHS-compliant construction as stated in the SK hynix family datasheet. Bank-group architecture allows faster access to sequential data, improving effective bandwidth for streaming workloads. Technically, the H5ANAG8NC family uses SK hynix CMOS DRAM process technology with internal bank groups, on-die termination (ODT), DLL for output timing control, and self-refresh for low-power data retention. The -PBC speed-grade suffix in SK hynix nomenclature identifies the speed bin and operating temperature range coding used across the H5ANAG8NC product family; exact speed-bin MHz and CL values should be confirmed against the current SK hynix datasheet before design-in. Typical applications include server main memory, industrial embedded computing, networking equipment, and desktop/notebook PC memory modules where a stable DDR4 supply still matters in the DDR5 transition period. A key design consideration is DDR4 signal integrity: fly-by command/address routing, VTTQ termination, and per-byte-lane length matching are required for reliable operation at full data rate. This page synthesizes distributor sourcing data, drop-in alternatives from the same SK hynix 16Gb DDR4 family, and practical design notes not found in the manufacturer datasheet alone.
H5CG34MEBDX030 - DDR5 SDRAM DRAM Chip | SK hynix
The SK hynix H5CG34MEBDX030 is a DDR5 SDRAM memory component (DRAM IC) from the H5CG3x DDR5 device family, manufactured by SK hynix on an advanced CMOS DRAM process and housed in a fine-pitch BGA (FBGA) surface-mount package. [DATA_NEEDED: verified density, speed grade, and supply voltage figures from the official datasheet] A DDR5 SDRAM is the fifth generation of double-data-rate synchronous dynamic random-access memory, the volatile memory class that sits at the top of the memory hierarchy in servers, PCs, and embedded systems. Compared with DDR4, DDR5 doubles the bank groups, moves the power management IC (PMIC) onto the module, lowers the per-cell operating voltage, and raises data rates beyond 4800 MT/s, making it the backbone technology for memory-intensive compute platforms. Key characteristics of the H5CG DDR5 family include high-speed point-to-point data links, on-die ECC (link ECC with on-die error checking), a same-bank refresh (REFsb) capability that improves effective bandwidth, and burst length of 16 for improved bus efficiency. These features matter for AI accelerator memory, high-performance computing, and server main memory where bandwidth per watt is a key metric. Architecturally, DDR5 devices split each rank into two independent 32-bit sub-channels with their own CA and CS signals, allowing two concurrent access streams and shorter burst lengths. Internal banks are wider and refresh schemes are more granular than DDR4, which raises effective throughput under mixed read/write workloads. Typical applications include data-center server DIMMs and RDIMMs, desktop and workstation UDIMMs, AI/GPU accelerator memory subsystems, networking equipment buffers, and high-end embedded computing where DDR5 memory controllers (such as Intel or AMD server SoCs) are used. Design consideration: DDR5 signal integrity demands length-matched routing, ODT (on-die termination) tuning, and correct VDDQ/VDD rail decoupling; always verify speed grade and CL timings against the controller's trained values. This page adds value beyond the datasheet by aggregating drop-in alternatives, buying guidance, and practical DDR5 design notes in one place.
H5CG44AGBDX018N - 16Gb DDR5-5600 SDRAM x4 | SK Hynix
The SK Hynix H5CG44AGBDX018N is a 16Gb (4G x 4) DDR5 SDRAM memory IC with an x4 organization, DDR5-5600 speed grade, and FBGA package for surface-mount assembly. It is designed for high-bandwidth main-memory applications in servers, workstations, and computing modules. DDR5 SDRAM is the fifth generation of double-data-rate synchronous dynamic random-access memory, the component class that serves as main system memory between the processor and storage hierarchy. Within that hierarchy, DDR5 DRAM -> SDRAM -> semiconductor memory -> memory IC. DDR5 doubles the bank groups of DDR4, lowers the operating voltage, and integrates on-die ECC and a PMIC on the memory module rather than the chip; the die itself delivers higher per-pin data rates than any previous generation. Key features of the H5CG44AGBDX018N include the DDR5-5600 speed grade (5600 MT/s per pin), a x4 organization (4G addressable locations of 4 bits), and 16Gb total density per die, enabling high-capacity DIMMs and soldered-down memory with fewer packages. The x4 organization is specifically favored in registered DIMMs with strong error-protection schemes and in storage controllers, because x4 devices pair naturally with chipkill-class correction strategies. The device uses SK Hynix advanced DRAM process technology with on-die termination, a differential clocking interface, and the standard DDR5 command/address architecture with two independent channels per DIMM footprint. Signal integrity is supported by programmable termination values and a DQS-based strobe-aligned interface, allowing reliable operation at 5600 MT/s on carefully length-matched fly-by topologies. Typical applications include data-center RDIMM and LRDIMM modules, industrial computing modules, embedded controllers requiring high-bandwidth volatile memory, and replacement sourcing for server-memory repair and refurbishment programs. Design consideration: DDR5 signal integrity depends heavily on trace length matching, reference-plane continuity, and controller training routines; always enable write leveling and per-rank read training at DDR5-5600 speeds. This page synthesizes distributor availability, same-family drop-in alternatives, and procurement guidance not consolidated in the manufacturer datasheet.
H5CG44MEBDX014 - 16Gb DDR5-4800 x4 SDRAM | SK hynix
The SK hynix H5CG44MEBDX014 is a 16Gb (4Gx4) DDR5 SDRAM component manufactured on SK hynix's first-generation 1z-range M-die process, rated at DDR5-4800 and supplied in a 78-ball FBGA package. DDR5 SDRAM (Double Data Rate 5 synchronous dynamic random-access memory) is the fifth-generation JEDEC DDR memory standard and the successor to DDR4 in the volatile memory hierarchy: SDRAM -> DDR SDRAM -> DDR5 SDRAM -> main-memory class DRAM. DDR5 doubles the bank-group count per device versus DDR4, moves power management onto the DIMM (PMIC), and lowers per-bit operating voltage to 1.1V, enabling higher densities and better bandwidth-per-watt for servers, workstations, and high-performance client platforms. Key features of this device include the 4Gx4 (x4) organization, which is preferred in error-protected server configurations where chip-kill and ECC schemes benefit from narrow-wide bus architectures; the DDR5-4800 data rate, corresponding to a 2400 MHz clock and 38.4 GB/s of peak bandwidth per 64-bit channel; and the industry-standard 78-ball FBGA footprint that provides mechanical compatibility across the DDR5 component ecosystem. Architecturally, DDR5 components integrate an on-die ECC engine (link ECC), same-bank refresh improvements, and a decision-feedback equalization (DFE) capable DQ receiver path that sustains signal integrity at 4800 MT/s. Bank-group architecture increases effective parallelism, while the reduced VDD of 1.1 V lowers dynamic power relative to DDR4 at comparable data rates. Typical applications include server DIMMs (RDIMM/LRDIMM), embedded computing and storage controllers, industrial compute modules, networking equipment line cards, and replacement sourcing for DDR5-based BOMs. A key design consideration is that DDR5 SDRAM requires a 1.1 V supply rail with tight tolerance and typically relies on a companion register/PMIC ecosystem on registered modules; signal-integrity closure at 4800 MT/s requires controlled-impedance routing, fly-by command/address topology, and reference-design-validated termination. This page synthesizes distributor availability data, drop-in family alternatives, and practical design notes not found in the raw manufacturer datasheet listings.
H5CG44MEBDX014N - 16Gb DDR5-4800 SDRAM x4 | SK hynix
The SK hynix H5CG44MEBDX014N is a 16 Gb DDR5 SDRAM component organized x4, operating at DDR5-4800 (2400 MHz clock) on a 1.1 V VDD supply, housed in a 78-ball FBGA package built on SK hynix 1st-generation DDR5 M-die silicon. DDR5 SDRAM is the fifth generation of double-data-rate synchronous dynamic random-access memory, the memory class that sits at the top of the DRAM hierarchy (DDR5 -> DDR SDRAM -> SDRAM -> semiconductor memory). Compared with DDR4, DDR5 doubles the bank-group count, moves the power management from the module to the device ecosystem via PMIC-equipped DIMMs, and improves channel efficiency with two independent 32-bit sub-channels per DIMM. Individual DDR5 components such as the H5CG44MEBDX014N are the building blocks soldered onto RDIMMs, SODIMMs, CUDIMMs, and embedded memory-down PCBs. Key features of this device include the 16 Gb density per component (4G x4 organization), a 4800 Mbps/pin data rate at 1.1 V operation, and the JEDEC-class DDR5 electrical interface with on-die termination, decision-feedback equalization, and command/address training features. The x4 organization is specifically favored in ECC-heavy server designs, where multiple x4 devices contribute to chipkill-class error correction on registered DIMMs. Technically, the 1st-gen M-die implements DDR5 burst length 16, two per-field refresh modes (fine granularity refresh modes 1x/2x/4x), same-bank refresh, and bank-group architecture per the JEDEC DDR5 standard. The 78-ball FBGA surface-mount package supports standard memory-controller routing and thermal design for high-density server platforms. Typical applications include data-center server main memory on RDIMMs, embedded computing modules, industrial controllers, firmware logging buffers, and replacement sourcing for memory-down main-board designs. Design consideration: verify your memory controller's DDR5 speed-grade support and DFE training capability; DDR5-4800 operation at 1.1 V requires careful power-integrity design on the VDD/VDDQ rails and reference-less DQS training in the controller. This page synthesizes distributor inventory, drop-in alternative data, and procurement guidance not found in the manufacturer datasheet alone.
HMA84GR7CJR4N-UH - 32GB DDR4-2400 RDIMM ECC | SK hynix
The SK hynix HMA84GR7CJR4N-UH is a 32GB DDR4-2400 MHz PC4-19200 ECC Registered DIMM (RDIMM) with 288 pins, 2Rx4 dual-rank x4 organization, and a 1.2V operating voltage, built on 8Gb C-die DDR4 SDRAM devices in 78-ball FBGA packages. A Registered DIMM (RDIMM) is a server-class memory module in which address and command signals pass through a register chip before reaching the DRAM devices. This registration reduces electrical loading on the memory controller, allowing more DIMMs per channel and higher capacities than unbuffered UDIMMs. Combined with ECC (Error Correction Code), which detects and corrects single-bit errors, RDIMMs sit at the top of the memory hierarchy for data-center and enterprise computing, above UDIMMs and SO-DIMMs. Key features include 32GB capacity organized as 4Gx72 (64-bit data plus 8-bit ECC), DDR4-2400 transfer rate (PC4-19200 bandwidth), CAS latency CL17, and dual-rank x4 topology using 36 pieces of 2Gx4 8Gb C-die DDR4 SDRAM. The x4 DRAM organization enables SDDC (Single Device Data Correction), which corrects an entire DRAM device failure - a critical reliability feature for large-memory servers. The module operates from a single 1.2V supply, roughly 20% lower than DDR3, reducing power draw and thermal load in dense server chassis. On-module register and PLL buffer the CA signals and clock, while on-die termination and DBI (data bus inversion) support signal integrity at 2400 MT/s across the 288-pin registered interface. Typical applications include HPE ProLiant and Dell PowerEdge server memory upgrades, virtualization hosts, database servers, and cloud infrastructure where ECC-registered memory is mandatory for platform validation. When deploying, verify server BIOS and QRD (Qualified Vendor List) support for DDR4-2400 RDIMMs, and populate channels in matched sets per the platform memory population rules to achieve optimal interleaving and speed. This page synthesizes distributor pricing, drop-in alternatives, FAQ answers, and practical deployment notes not found in the manufacturer datasheet.
K3KL1L10GM-JGCT - 32Gb LPDDR5X-7500 DRAM | Samsung
The Samsung K3KL1L10GM-JGCT is a 32Gb (4 GB) LPDDR5X DRAM memory IC delivering LPDDR5X-7500 data rates on a x64 interface, housed in a 441-ball FBGA package. It is Samsung's premium low-power DRAM aimed at flagship mobile and edge-AI platforms. LPDDR (Low Power Double Data Rate) DRAM is a class of synchronous dynamic random-access memory optimized for low operating voltage and high bandwidth per watt, forming the main-memory tier of the memory hierarchy in embedded and mobile systems (DRAM -> low-power DRAM -> LPDDR5X -> LPDDR5X-7500). Compared with conventional DDR4/DDR5, LPDDR5X trades socketed modularity for soldered-down density, deeper power-down states, and per-byte energy efficiency. Key features include 32Gb single-die density, an LPDDR5X-7500 interface (up to 7500 MT/s) on a x64 organization, and roughly 1.25x higher speed with about 25% better power efficiency than the previous LPDDR5 generation, according to Samsung product literature. Advanced link training and enhanced speed modes enable reliable operation at the highest bin. Technically, the device uses Samsung leading-edge DRAM process technology with a x64 bus architecture suited to SoC memory controllers from Qualcomm and MediaTek class application processors. The FBGA ball grid array provides short, controlled-impedance traces on the PCB, supporting the multi-gigabit signaling rates; fly-by-free point-to-point topologies are typical. Typical applications include AI edge accelerators and in-vehicle infotainment/high-performance compute modules, flagship smartphone main memory, and industrial high-speed vision systems where LPDDR5X frequency headroom is required. Design consideration: LPDDR5X-7500 signal integrity demands strict length-matched routing, reference-plane continuity, and controller-side equalization calibration during boot; verify the SoC memory controller supports the 7500 MT/s bin and JEDEC LPDDR5X training sequences before layout. This page synthesizes distributor stock data, drop-in same-family alternatives, and practical design notes not found in the Samsung datasheet.
K3KL8L80CM-MGCT - 32Gb LPDDR5X SDRAM x32 | Samsung
The Samsung K3KL8L80CM-MGCT is a 32 Gbit (4 GB) LPDDR5X SDRAM with a 32-bit (x32) data bus, supplied in a 315-ball FBGA package. It operates from -25C to +85C with core power at 1.05V and support rails at 500 mV (VDDQ low-power mode), 900 mV (VDDQ), and 1.8V (VDD2), delivering data rates up to 7500 Mbps for high-bandwidth, power-constrained designs. LPDDR5X (Low Power Double Data Rate 5X) is a JEDEC-defined evolution of the LPDDR5 DRAM standard that extends interface speed while lowering the I/O supply voltage. Within the memory hierarchy, LPDDR5X sits in the low-power DRAM family alongside LPDDR4X and LPDDR5, targeting mobile SoCs, embedded platforms, and increasingly automotive and on-device AI processors where bandwidth per watt matters more than raw capacity expansion. Key features of the K3KL8L80CM include the LPDDR5X interface with speeds up to 7500 Mbps, a wide x32 organization suited to single-channel or stacked multi-die designs, and Samsung's power-efficiency improvements of roughly 20-25% versus the previous LPDDR5 generation. The FBGA-315 ball map follows the standard LPDDR5/LPDDR5X monolithic die footprint used across Samsung's K3KL family. Architecturally, the device uses Samsung advanced DRAM process technology with dynamic voltage scaling of the VDDQ rail down to approximately 500 mV in deep power-down and low-frequency states, plus per-bank and deep-sleep power-down modes that cut idle current dramatically - critical for battery-powered and thermally constrained systems. Typical applications include flagship smartphone and tablet main memory, AI edge accelerators and on-device inference modules, automotive infotainment and ADAS compute platforms, and embedded single-board computers. Design consideration: LPDDR5X signal integrity demands careful length-matched routing, on-die termination configuration through mode registers, and a clean 1.05V core rail with low-ESR decoupling; verify controller compatibility with the target 7500 Mbps rate bin before layout. This page synthesizes distributor pricing, cross-reference alternatives, and practical design notes not found in the Samsung datasheet.
K3LK4K40CM-BGCP - LPDDR5 96Gb 6400Mbps DRAM | Samsung
The Samsung Electronics K3LK4K40CM-BGCP is a high-density LPDDR5 SDRAM memory IC offering 96 Gb (12 GB) of DRAM in a 496-ball FBGA package operating at a core supply of 1.05 V with a data rate of up to 6400 Mbps per pin. LPDDR5 (Low Power Double Data Rate 5) is the fifth generation of JEDEC low-power synchronous DRAM aimed at mobile and embedded systems. Within the memory hierarchy it sits under DRAM -> synchronous DRAM -> low-power SDRAM -> LPDDR5, and it serves as the main working memory in smartphones, tablets, and computing modules where bandwidth-per-watt matters more than absolute capacity. Key features of the K3LK4K40CM-BGCP include its 96 Gb density organized as x64 (1536M x 64 per the FBGA-496 listing), 6400 Mbps peak data rate, and a reduced-voltage core rail of 1.05 V that lowers dynamic power versus earlier LPDDR4 generations. Deep power-down modes and per-bank refresh architecture further cut idle current in battery-powered designs. Technically, LPDDR5 introduces bank-group architectures, a 16n prefetch scheme, and flexible on-die termination that allow the interface to scale past 6000 Mbps while preserving signal integrity over mobile-style point-to-point links. Samsung fabricates these devices on advanced DRAM process nodes, and the BGCP suffix denotes the 496-ball FBGA footprint used across the K3LK LPDDR5 family. Typical applications include flagship smartphone and tablet main memory, AI edge accelerators, embedded computing modules, industrial controllers with data logging, and replacement sourcing for uMCP assembly lines. Designers should note that LPDDR5 point-to-point routing requires careful length matching and reference-plane discipline; the memory controller must support the LPDDR5 JEDEC command set, as LPDDR4 controllers are not electrically compatible. This page synthesizes distributor pricing tiers, drop-in family alternatives, and practical design notes not found in the manufacturer datasheet.
K3LK4L40DM-BGCT - Samsung DRAM Memory IC | Samsung Electronics
The Samsung Electronics K3LK4L40DM-BGCT is a DRAM (dynamic random access memory) semiconductor component supplied in a ball grid array (BGA) package, classified by distributors under specialized memory ICs and used across mobile devices, consumer electronics, and embedded systems. Pricing references from third-party spot-market distributors have listed this part at approximately $50.60 per unit for single-piece quantities (as of 2026-09-04). DRAM is the workhorse memory technology of modern electronics: it stores each bit as a charge on a capacitor within a transistor-capacitor cell, providing high density and fast random access at low cost per gigabyte, but requiring periodic refresh to retain data. Within the memory hierarchy, DRAM sits between CPU caches (SRAM) and non-volatile storage (NAND flash), serving as the main working memory in smartphones, tablets, networking equipment, industrial controllers, and PCs. A DRAM component such as this is the building block from which memory modules (DIMMs) and stacked memory subsystems are assembled. Samsung Electronics is the world's largest DRAM manufacturer, and this part follows Samsung's structured naming convention where the K-prefix identifies DRAM products and the -BGCT suffix denotes a BGA-packaged, lead-free (G = RoHS-compliant green) commercial temperature offering. Key selection parameters for DRAM components include density, bus width, data rate, operating voltage class, and package ball count; buyers should consult the manufacturer datasheet for the exact values of these parameters for this ordering code. Typical applications include mobile device main memory, consumer electronics such as smart TVs and set-top boxes, and embedded systems including industrial HMI and networking platforms where dense, high-bandwidth volatile memory is required alongside an application processor or SoC with a compatible memory controller. When designing in this component, verify that your memory controller timing settings (CAS latency, burst length, refresh interval) match the datasheet speed grade, and follow Samsung's layout guidelines for fly-by/daisy-chain routing and VDDQ decoupling. Signal integrity at high data rates demands controlled impedance and length-matched traces. This page synthesizes distributor pricing references, drop-in alternatives, and practical design notes not found in the manufacturer datasheet, giving engineers a single citation-ready resource.
K3LKCKC0BM-MGCP - 64Gb LPDDR5 SDRAM 6400 Mbps | Samsung
The Samsung K3LKCKC0BM-MGCP is a 64 Gbit (8 GB) LPDDR5 SDRAM organized as 2G x32, operating at up to 6400 Mbps pin speed, supplied in a 315-ball FBGA package and rated for -25C to +85C operation. It runs from multiple supply rails including 1.05V, 1.8V, 900mV and 500mV core/interface domains per the LPDDR5 standard. LPDDR5 (Low Power Double Data Rate 5) is a JEDEC-defined CMOS DRAM memory technology optimized for mobile and power-sensitive computing. In the memory hierarchy it sits as the main system DRAM below the CPU/SoC cache, providing high-bandwidth working memory with aggressive power management such as deep power-down, DVFS, and bank group architectures. Key features include 64 Gbit density in a single package, 6400 Mbps data rate (equivalent to 51.2 GB/s aggregate bandwidth in a x32 dual-channel system as promoted on the Samsung LPDDR5 product page), low-voltage signaling for reduced power, and RoHS compliance. The x32 organization supports burst-oriented, channel-interleaved access typical of application processors. Architecturally, the device uses a CMOS DRAM core with LPDDR5 bank-group structure, on-die termination, and speed-grade optioning encoded in the MPN suffix. The MGCP suffix denotes package/speed binning per Samsung ordering information. Typical applications include flagship smartphone main memory, automotive infotainment and ADAS edge-computing SoCs, and AI edge modules where high bandwidth-per-watt is critical. Design consideration: the memory controller and PCB routing must support 6400 Mbps signaling; impedance control, fly-by termination, and per-rail decoupling of the 1.05V/1.8V/900mV/500mV supplies are essential for signal integrity. This page adds value beyond the datasheet by consolidating distributor stock and pricing data, drop-in family alternatives, and practical design notes in one place.
K3LKJKJ0CM-MUCP - 24Gb LPDDR5 DRAM 6400Mbps | Samsung
The Samsung K3LKJKJ0CM-MUCP is a 24 Gbit (3 GB) LPDDR5 SDRAM memory device delivered in a 315-ball FBGA package, supporting data rates up to 6400 Mbps on a multi-rail power architecture of 1.8 V (VDD2), 1.05 V (VDD1) and 0.9 V (VDDQ). LPDDR5 (Low Power Double Data Rate 5) is a JEDEC-defined DRAM interface standard optimized for mobile, automotive and edge-computing platforms. In the memory hierarchy it sits as the main system DRAM: a volatile, high-bandwidth working memory positioned below CPU caches but above storage such as UFS or eMMC. Compared with LPDDR4X, LPDDR5 raises pin speed to 6400 Mbps, adds deep-sleep modes and per-bank refresh for roughly 20% power savings at comparable workloads. Key features of the K3LKJKJ0CM-MUCP include 24 Gbit density per package, 315-ball fine-pitch BGA surface-mount packaging, 6400 Mbps maximum transfer rate, and the LPDDR5 triple-rail voltage scheme (1.8 V / 1.05 V / 0.9 V) that separates core and I/O domains for dynamic power optimization. Samsung lists related automotive-grade variants in the same K3LKJ family on a 315 FBGA footprint, enabling common-board designs across temperature grades. Architecturally, LPDDR5 devices use bank-group organization, a link ECC option and WCK/flexible clocking to sustain high bandwidth at low idle power. The 24 Gbit organization (x32-class mobile DRAM interface) makes the part suitable for stacking or pairing to reach 6 GB and 12 GB system memory configurations in SoC platforms from Qualcomm, MediaTek and similar vendors. Typical applications include automotive ADAS and infotainment memory subsystems, flagship smartphone and tablet main memory, and embedded edge-AI computing modules where bandwidth-to-power ratio is critical. A key design consideration is power integrity: the separated 0.9 V VDDQ rail demands tight decoupling and careful length-matched fly-by-style routing to the SoC memory controller at 6400 Mbps. This page synthesizes verified distributor data, same-family drop-in alternatives, and sourcing guidance not found in any single datasheet excerpt.
K4A4G045WD-BCRC - 4Gb DDR4 SDRAM x4, 1.2V | Samsung
The Samsung K4A4G045WD-BCRC is a 4Gb DDR4 SDRAM component organized as 1G x4, operating at 1.2V VDD in a 78-ball TFBGA (FBGA-78) package. The BCRC speed bin supports 2400 Mbps data rates per the Samsung D-die DDR4 product selection guide. DDR4 SDRAM (Double Data Rate 4 Synchronous Dynamic Random Access Memory) is the fourth generation of the DDR DRAM family, defined by JEDEC as the successor to DDR3. In the memory hierarchy, this device is a DRAM component (not a module) that sits beneath memory modules and above NAND storage, providing volatile, high-speed working memory for processors and SoCs. DDR4 lowers the core operating voltage to 1.2V versus 1.5V for DDR3, increases bank counts, and adds features such as bank groups and a 2n refresh architecture for 8Gb-class devices. Key features of the K4A4G045WD include 4Gb density on Samsung's D-die process, a x4 organization suited to error-correcting-code (ECC) memory subsystems where check bits run on dedicated data lanes, and a 78-ball fine-pitch BGA footprint that supports high-density memory arrays. DDR4's 8-bank group structure (four groups of four banks) with tCCD_S/tCCD_L timings enables higher effective bandwidth than DDR3 at the same clock. Technically, the device uses a double-data-rate command/address interface and on-die termination (ODT) to maintain signal integrity at 2400 Mbps transfer rates. A differential clock pair (CK/CK#) and strobes (DQS/DQS#) window data capture, while a reset pin (RESET#) allows low standby power. As an ECC-friendly x4 device, it is typically paired with memory controllers supporting SECDED error correction for industrial and server-class reliability. Typical applications include embedded and industrial motherboards, networking line cards, storage controllers, and server DIMMs where long-term component availability matters. Samsung positions this DDR4 lineup for embedded, industrial, and server-grade memory applications as the industry migrates toward DDR5. Design consideration: DDR4 routing requires length-matched fly-by command/address topology, per-byte termination, and careful VREF training; consult the memory controller's DDR4 design guide before layout. This page synthesizes distributor stock data, drop-in alternatives, and practical design notes not found in the manufacturer datasheet alone. Pricing is quote-based as of 2026-09-04.