H5AN8G8NAFR-PBC - 8Gb DDR4 SDRAM x8 1.2V | SK hynix
Référence : H5AN8G8NAFR-PBC ✓ Actif| Qté | Prix unitaire | Total |
|---|---|---|
| 1 | $3.2 | $3,20 |
| 10 | $2.95 | $29,50 |
| 100 | $2.7 | $270,00 |
| 500 | $2.45 | $1 225,00 |
| 1 000 | $2.2 | $2 200,00 |
H5AN8G8NAFR-PBC Présentation
DDR4 SDRAM is the fourth generation of double-data-rate synchronous dynamic random-access memory, a class of volatile semiconductor memory that synchronizes data transfer to a clock and transfers data on both clock edges. In the system hierarchy it sits under SDRAM -> DRAM -> volatile memory ICs and serves as the primary working memory for CPUs, SoCs, and memory controllers in servers, desktops, notebooks, and embedded systems.
Key features of this device include 8Gb density in a single x8 organization, a 1.2V core supply that lowers power versus DDR3, a 78-ball FBGA surface-mount package, and lead-free, halogen-free, RoHS-compliant construction. Internal banks support concurrent activation, and the DDR4 interface adds features such as bank-group architecture, DBI (data bus inversion), CA parity, and connectivity test (TEN) mode support noted in the datasheet.
Technically, the device uses CMOS process technology with the standard DDR4 command set: ACTIVATE, READ, WRITE, REFRESH (including self-refresh), PRECHARGE, and Mode Register Set. Address inputs A0-A17 provide row addresses for ACTIVATE and column addresses for READ/WRITE, with A10/AP, A12/BC_n, RAS_n/A16, CAS_n/A15 and WE_n/A14 multiplexing additional functions per the SK hynix datasheet Rev. 1.2 (July 2017).
Typical applications include PC and server main memory modules (UDIMM, RDIMM, SODIMM), embedded systems with DDR4 memory controllers, networking equipment, industrial computers, and set-top or smart-home platforms needing 8Gb-per-chip density and high bandwidth.
A key design consideration: DDR4 requires careful length-matched routing, on-die-termination (ODT) configuration, and VTT termination on address/command lines; verify the memory controller supports the -PBC speed bin timings before layout.
This page synthesizes verified datasheet data, distributor availability, drop-in alternatives, and practical DDR4 design notes not consolidated in the manufacturer datasheet.
Alternatives de remplacement direct pour H5AN8G8NAFR-PBC — même boîtier, compatible broche à broche. Les références à boîtier différent nécessitant une retouche du PCB sont exclues.
Variantes de cette série
Modèles de la même série directement compatibles avec H5AN8G8NAFR-PBC (même facteur de forme et même empreinte) — différant par Package, Interface, Organization, RoHS Status, Data Rate.
Outil de comparaison rapide — sélectionnez des références alternatives pour une comparaison côte à côte :
H5AN8G8NAFR-TFC
✅ Remplacement direct📋 Alternative de référence (hors catalogue)
H5AN8G8NAFR-UHC
✅ Remplacement direct✓ En stock
Contactez-nous pour le prix
Voir la fiche technique →H5AN8G8NMFR-TFC
✅ Remplacement direct📋 Alternative de référence (hors catalogue)
MT40A1G8AG-062E
✅ Remplacement direct✓ En stock
$3.1 / unité
Voir la fiche technique →K4A8G085WC-BCTD
✅ Remplacement direct✓ En stock
$50.85 / unité
Voir la fiche technique →H5AN8G8NAFR-PBC
✅ Remplacement direct✓ En stock
$2.2 / unité
Voir la fiche technique →H5AN8G8NAFR-PBC Spécifications
| Type de mémoire | DDR4 SDRAM |
| Density | 8 Gb |
| Organisation de la mémoire | 1G x 8 |
| Tension d'alimentation | 1.2 V |
| Boîtier | FBGA-78 |
| Type de montage | Surface Mount |
| Interface | DDR4 (double data rate, synchronized to clock) |
| Address Inputs | A0 - A17 (A10/AP, A12/BC_n, RAS_n/A16, CAS_n/A15, WE_n/A14 multiplexed) |
| Connectivity Test Mode | TEN (optional input on x4/x8, required on x16) |
| Process Technology | CMOS |
| Lead-Free | Yes |
| Sans halogène | Yes |
| Statut RoHS | Compliant |
| Datasheet Revision | Rev. 1.2 / July 2017 |
Guide de configuration des broches du H5AN8G8NAFR-PBC fbga-78
Configuration des broches du H5AN8G8NAFR-PBC (boîtier fbga-78). La numérotation des broches, les fonctions et les schémas de connexion sont définis dans la fiche technique du fabricant. Consultez-la pour l'empreinte exacte et les directives de soudage.
Aucune donnée de brochage détaillée disponible pour H5AN8G8NAFR-PBC.
Consultez la fiche technique pour la configuration complète des broches.
Applications typiques
H5AN8G8NAFR-PBC convient pour 6 applications: PC and Workstation Main Memory (UDIMM/SODIMM), Server Memory Modules (RDIMM/LRDIMM), Embedded and Industrial Computing, Networking and Telecom Equipment, Set-Top Boxes and Smart Home Hubs, Test, Measurement, and Data Acquisition Systems.
PC and Workstation Main Memory (UDIMM/SODIMM)
The H5AN8G8NAFR-PBC is a natural fit for consumer and workstation DRAM modules, where its 8Gb-per-chip density lets a single-rank 8 GB UDIMM use only eight chips (or sixteen for 16 GB). Its 1.2V supply cuts module power roughly in half compared with an equivalent DDR3 design, directly reducing DIMM thermal load and enabling fanless SODIMM designs in mini PCs and notebooks. In module designs the x8 organization gives per-byte-lane granularity that aligns one chip per DQ lane, simplifying SPD configuration, ECC-free UDIMM layouts, and rank interleaving. The JEDEC FBGA-78 footprint also lets module makers dual-source Micron MT40A1G8AG or Samsung K4A8G085WC equivalents without PCB respin, which is critical for high-volume module production.
Recommandé
Server Memory Modules (RDIMM/LRDIMM)
In server RDIMMs, density per chip drives maximum capacity per DIMM and per channel. Using the 8Gb H5AN8G8NAFR-PBC allows 16 GB RDIMMs built from 18 chips (16 data plus buffer/SPD support on x8 organization), and 8Gb-class chips are the building blocks for the mainstream 32 GB per-DIMM configurations in dual-socket servers. DDR4's bank-group architecture and DBI support reduce command bus contention and improve signal integrity at high data rates across heavily loaded server channels. Because the part shares the JEDEC FBGA-78 ballout with Micron and Samsung equivalents, server ODMs qualify all three sources against the same PCB, and the registered buffer (e.g., RCD companion ICs) handles command/address fan-out and parity checking across the high chip count.
Recommandé
Embedded and Industrial Computing
Industrial PCs, machine-vision controllers, and edge-compute gateways use DDR4 controllers from x86 or ARM SoCs paired with discrete DDR4 components like the H5AN8G8NAFR-PBC. Its 8Gb density in one package suits designs needing 2-8 GB of working memory (two to eight chips) without moving to stacked memory-down LPDDR solutions, keeping BOM cost low and allowing socketed/repairable designs. The 1.2V rail simplifies power-tree design with standard DDR4 PMICs and termination regulators, and the RoHS-compliant, lead-free, halogen-free construction aligns with industrial environmental requirements. Designers should verify the SoC's memory training tables include the Hynix AFR die or use flexible DDR4 PHY training to accept the speed bin of the -PBC suffix.
Recommandé
Networking and Telecom Equipment
Routers, switches, and network-attached processors buffer large packet flows in external DDR4 memory, and the H5AN8G8NAFR-PBC's combination of 8Gb density and x8 organization supports the 1-4 GB buffering pools typical in managed switches and SD-WAN appliances. DDR4's high bandwidth (double-data-rate transfers on both clock edges with bank-group interleaving) sustains line-rate packet buffering, while 1.2V operation lowers the thermal budget of fanless telecom hardware. The TEN (connectivity test) mode noted in the SK hynix datasheet aids board-level ball-connection verification during ICT and production test, valuable on high-layer-count network boards. The JEDEC FBGA-78 footprint supports multi-sourcing against Micron and Samsung DDR4 equivalents to protect networking product roadmaps from DRAM allocation.
Recommandé
Set-Top Boxes and Smart Home Hubs
Advanced set-top boxes, Android TV platforms, and smart-home hubs run Linux-based middleware stacks that need 1-2 GB of DRAM, which the H5AN8G8NAFR-PBC delivers with just one or two chips in memory-down layouts. The 1.2V DDR4 supply suits always-on consumer devices where standby power regulations apply, and the compact FBGA-78 package fits dense main-board layouts alongside the SoC. Because consumer platforms ship in very high volumes, the ability to drop in the SK hynix TFC/UHC speed-bin variants or the pin-compatible Micron/Samsung equivalents without PCB changes is a decisive sourcing advantage. Firmware teams must ensure the bootloader's DDR4 training covers the Hynix AFR die and the chosen -PBC speed bin.
Recommandé
Test, Measurement, and Data Acquisition Systems
Bench instruments, logic analyzers, and high-speed data-acquisition cards capture large sample streams into DRAM, and the H5AN8G8NAFR-PBC's 8Gb capacity per chip enables deep capture buffers (e.g., 4 GB using four chips) at mainstream commodity cost. DDR4's double-data-rate interface and bank-group architecture provide the sustained write bandwidth needed to keep pace with multi-gigasample ADC front ends, while the x8 organization pairs cleanly with FPGA memory controllers implementing per-lane DQS calibration. The TEN connectivity-test input supports manufacturing test of the dense FBGA solder joints on multilayer instrument boards. Instruments benefit from the multi-source FBGA-78 footprint, allowing memory upgrades or supply changes without redesigning the capture subsystem.
Recommandé
Récapitulatif des produits recommandés
Données de référence d'ingénierie pour H5AN8G8NAFR-PBC — comparaison, recommandations de conception et informations de conformité.
Guide de sélection
Comparaison avec les alternatives
| Paramètre | Ce produit | H5AN8G8NAFR-TFC | H5AN8G8NAFR-UHC | H5AN8G8NMFR-TFC | MT40A1G8AG-062E | K4A8G085WC-BCTD |
|---|---|---|---|---|---|---|
| Package | FBGA-78 | FBGA-78 - same | FBGA-78 - same | FBGA-78 - same | FBGA-78 - same | FBGA-78 - same |
| Brand | SK hynix | SK hynix | SK hynix | SK hynix | Micron Technology | Samsung Electronics |
| Density | 8 Gb | 8 Gb | 8 Gb | 8 Gb | 8 Gb | 8 Gb |
| Organization | 1G x 8 | 1G x 8 | 1G x 8 | 1G x 8 | 1G x 8 | 1G x 8 |
| Supply Voltage | 1.2 V | 1.2 V | 1.2 V | 1.2 V | 1.2 V | 1.2 V |
| Die Generation | AFR (NAFR) | AFR (NAFR) | AFR (NAFR) | MFR (newer die) | Micron DDR4 8Gb | Samsung DDR4 8Gb |
Principaux différenciateurs
- Original AFR-die SK hynix 8Gb part with documented 45-page datasheet (vs H5AN8G8NMFR-TFC)
- JEDEC FBGA-78 footprint enables seamless dual-sourcing (vs MT40A1G8AG-062E)
- 1.2V DDR4 operation versus DDR3 predecessors (vs H5AN8G8NMFR-TFC)
Notes de conception
DDR4 routing for the H5AN8G8NAFR-PBC must follow JEDEC fly-by topology on address/command/control with VTT termination, and length-matched DQ/DQS routing per byte lane within tight intra-pair and inter-lane skew budgets. DQS_t/DQS_c differential pairs need matched length and solid reference planes. Address nets carrying multiplexed functions (A10/AP, A12/BC_n, RAS_n/A16, CAS_n/A15, WE_n/A14 per the datasheet) must meet address-bus setup/hold, not just static timing. On DIMM designs, follow the JEDEC module design guide rather than point-to-point rules.
Provide separate 1.2V VDD and VDDQ rails (typically from a DDR4 PMIC with a VTT termination regulator for the fly-by bus). Estimated: a 1 GB module of eight H5AN8G8NAFR-PBC chips draws a few watts at full bandwidth - size the regulator and copper pour using the datasheet IDD currents at the -PBC speed bin rather than generic DDR4 values. Decouple VDD/VDDQ with bulk plus high-frequency ceramics close to each ball, and keep the VTT rail capable of sourcing and sinking termination current dynamically.
The most common failure with commodity DDR4 substitutions is memory-controller training data: firmware bootloaders (U-Boot, BIOS reference code) often carry per-die training tables. When swapping in H5AN8G8NMFR (MFR die), H5AN8G8NAFR-TFC/-UHC speed bins, or Micron/Samsung equivalents, re-run memory training and update SPD EEPROM contents. Also confirm the -PBC bin data rate against controller limits - a controller validated only at lower bins may fail at higher AC timing. Finally, source from authorized channels with traceability; commodity DRAM is a frequent target of remarketed/recycled parts.
Informations de conformité
SK hynix datasheet explicitly describes the part as Lead-Free & Halogen-Free (RoHS Compliant). REACH and conflict-minerals declarations should be requested from SK hynix or the distributor for current certificates.
