K3LK4K40CM-BGCP - LPDDR5 96Gb 6400Mbps DRAM | Samsung
Référence : K3LK4K40CM-BGCP ✓ Actif| Qté | Prix unitaire | Total |
|---|---|---|
| 1 | $48.5 | $48,50 |
| 10 | $45.2 | $452,00 |
| 100 | $42.6 | $4 260,00 |
| 500 | $40.1 | $20 050,00 |
| 1 000 | $37.8 | $37 800,00 |
K3LK4K40CM-BGCP Présentation
LPDDR5 (Low Power Double Data Rate 5) is the fifth generation of JEDEC low-power synchronous DRAM aimed at mobile and embedded systems. Within the memory hierarchy it sits under DRAM -> synchronous DRAM -> low-power SDRAM -> LPDDR5, and it serves as the main working memory in smartphones, tablets, and computing modules where bandwidth-per-watt matters more than absolute capacity.
Key features of the K3LK4K40CM-BGCP include its 96 Gb density organized as x64 (1536M x 64 per the FBGA-496 listing), 6400 Mbps peak data rate, and a reduced-voltage core rail of 1.05 V that lowers dynamic power versus earlier LPDDR4 generations. Deep power-down modes and per-bank refresh architecture further cut idle current in battery-powered designs.
Technically, LPDDR5 introduces bank-group architectures, a 16n prefetch scheme, and flexible on-die termination that allow the interface to scale past 6000 Mbps while preserving signal integrity over mobile-style point-to-point links. Samsung fabricates these devices on advanced DRAM process nodes, and the BGCP suffix denotes the 496-ball FBGA footprint used across the K3LK LPDDR5 family.
Typical applications include flagship smartphone and tablet main memory, AI edge accelerators, embedded computing modules, industrial controllers with data logging, and replacement sourcing for uMCP assembly lines.
Designers should note that LPDDR5 point-to-point routing requires careful length matching and reference-plane discipline; the memory controller must support the LPDDR5 JEDEC command set, as LPDDR4 controllers are not electrically compatible.
This page synthesizes distributor pricing tiers, drop-in family alternatives, and practical design notes not found in the manufacturer datasheet.
Alternatives de remplacement direct pour K3LK4K40CM-BGCP — même boîtier, compatible broche à broche. Les références à boîtier différent nécessitant une retouche du PCB sont exclues.
Variantes de cette série
Modèles de la même série directement compatibles avec K3LK4K40CM-BGCP (même facteur de forme et même empreinte) — différant par Package, Interface, Density, Product Family, Mounting Type.
Outil de comparaison rapide — sélectionnez des références alternatives pour une comparaison côte à côte :
K3LK4K40BM-BGCN
✅ Remplacement direct📋 Alternative de référence (hors catalogue)
K3LK8K80CM-MFCP
✅ Remplacement direct ⚠️ Spécifications non vérifiées✓ En stock
Contactez-nous pour le prix
Voir la fiche technique →K3LKJKJ0CM-MFCP
✅ Remplacement direct ⚠️ Spécifications non vérifiées✓ En stock
$21.9 / unité
Voir la fiche technique →K3LK2K20CM-JFCP
✅ Remplacement direct ⚠️ Spécifications non vérifiées✓ En stock
Contactez-nous pour le prix
Voir la fiche technique →K3LKCKC0BM-MGCP
✅ Remplacement direct ⚠️ Spécifications non vérifiées✓ En stock
$65.625 / unité
Voir la fiche technique →K3LK4K40CM-BGCP Spécifications
| Type de mémoire | LPDDR5 SDRAM |
| Density | 96 Gb (12 GB) |
| Organisation de la mémoire | 1536M x 64 |
| Débit de données | 6400 Mbps per pin |
| Supply Voltage (VDD) | 1.05 V |
| Boîtier | 496-ball FBGA |
| Type de montage | Surface Mount |
| Interface | LPDDR5 (JEDEC) |
| Refresh Scheme | Per-bank / all-bank refresh |
| Power-Down Modes | Deep sleep / power-down supported |
| Application Segment | Mobile, embedded, computing modules |
Guide de configuration des broches du K3LK4K40CM-BGCP 496-ball fbga
Configuration des broches du K3LK4K40CM-BGCP (boîtier 496-ball fbga). La numérotation des broches, les fonctions et les schémas de connexion sont définis dans la fiche technique du fabricant. Consultez-la pour l'empreinte exacte et les directives de soudage.
Aucune donnée de brochage détaillée disponible pour K3LK4K40CM-BGCP.
Consultez la fiche technique pour la configuration complète des broches.
Applications typiques
K3LK4K40CM-BGCP convient pour 6 applications: Flagship Smartphone Main Memory, Tablet and Notebook Computing Modules, Edge AI Accelerator Modules, Industrial Controllers and Data Logging, Automotive Infotainment Memory, Replacement Sourcing and BOM Continuity.
Flagship Smartphone Main Memory
The K3LK4K40CM-BGCP fits flagship smartphone main memory because its 96 Gb (12 GB) density and 6400 Mbps data rate provide the bandwidth headroom that modern application processors require for multitasking, gaming, and on-device AI inference. Its 1.05 V core supply and LPDDR5 deep-sleep modes reduce standby drain, directly extending battery life in always-on devices. In a typical design the memory sits in a point-to-point link with the SoC's LPDDR5 controller; routing discipline and on-die termination settings govern whether the 6400 Mbps rate is stable. Compared with dual-die lower-density packages, a single 96 Gb device simplifies the BOM but requires the controller to support the full density map.
Recommandé
Tablet and Notebook Computing Modules
Tablets and compact computing modules use the K3LK4K40CM-BGCP to reach 12 GB of main memory within a single 496-ball FBGA footprint, conserving board area in thin form factors. The 6400 Mbps interface keeps memory bandwidth from bottlenecking mid-range SoCs during multi-window use and media streaming, while the 1.05 V core rail supports thermal envelopes without active cooling. Designers typically place the package near the SoC with matched-length fly-by-free point-to-point routing; LPDDR5's bank-group architecture sustains throughput at moderate refresh overhead. Compared with soldered LPDDR4X of equal capacity, the LPDDR5 device offers roughly 50% higher peak bandwidth per pin at similar or lower power.
Recommandé
Edge AI Accelerator Modules
Edge-AI accelerators benefit from the K3LK4K40CM-BGCP's combination of 12 GB capacity and 6400 Mbps bandwidth, which together allow on-device storage of quantized neural-network weights and fast activation streaming. The x64 organization gives accelerators a wide single-device data path, reducing controller complexity versus narrower x32 parts. LPDDR5 deep-sleep states matter in intermittently-active inference nodes, cutting idle power between workloads. Integration places the memory adjacent to the NPU/SoC with careful length matching; performance tuning of refresh intervals and termination preserves sustained bandwidth. Against stacking multiple lower-density LPDDR4 devices, one 96 Gb LPDDR5 package halves component count and reflow risk on dense AI module PCBs.
Recommandé
Industrial Controllers and Data Logging
Industrial controllers use the K3LK4K40CM-BGCP as working memory for data buffering, embedded logging, and firmware execution, as outlined in distributor product overviews of this Samsung memory IC. Its 96 Gb capacity absorbs log bursts and protocol buffers in gateways and PLC-class hardware, while the 6400 Mbps interface prevents memory bottlenecks during concurrent sensor aggregation and network transmission. The 1.05 V supply keeps enclosure thermal rise low in fanless cabinets. Designers should confirm the industrial temperature grade with Samsung and secure long-term supply agreements, since this part originates from the mobile product line. Compared with DDR4 SODIMM approaches, the FBGA-mounted LPDDR5 saves space and improves shock tolerance.
Recommandé
Automotive Infotainment Memory
Automotive cockpit and infotainment platforms increasingly adopt LPDDR5-class memory; the K3LK4K40CM-BGCP's 12 GB capacity supports multi-display clusters, navigation, and in-cabin sensing workloads concurrently. The 6400 Mbps bandwidth ensures smooth graphics compositing, while the 1.05 V core helps meet the tight thermal budgets behind dashboards. Note that the standard CM-BGCP is not an AEC-Q100-qualified automotive part; automotive programs must obtain Samsung's automotive-graded LPDDR5 variants and qualify them formally. Integration is point-to-point with the SoC memory controller, and extended-temperature validation plus supply continuity planning are essential. Versus dual LPDDR4X devices, one 96 Gb package simplifies layout and improves bandwidth per watt.
Recommandé
Replacement Sourcing and BOM Continuity
For procurement teams, the K3LK4K40CM-BGCP serves as a replacement-sourcing target in uMCP and PoP assembly lines where original allocations lapsed; distributor channels list active stock (about 21,660 pcs as of August 31, 2026, per Octopart). Buyers should match the full suffix (CM-BGCP) since Samsung's family uses package and binning codes that change with each variant, and visually similar K3LK parts differ in ball count or speed bin. Verification should include package code review, date-code checks, and functional test at 6400 Mbps on the target platform. This part's active lifecycle status makes it a safer continuity choice than EOL LPDDR4 alternatives of similar capacity.
Recommandé
Récapitulatif des produits recommandés
Données de référence d'ingénierie pour K3LK4K40CM-BGCP — comparaison, recommandations de conception et informations de conformité.
Guide de sélection
Comparaison avec les alternatives
| Paramètre | Ce produit | K3LK4K40BM-BGCN | K3LK8K80CM-MFCP | K3LK2K20CM-JFCP |
|---|---|---|---|---|
| Package | 496-ball FBGA | FBGA (verify suffix) - closest | FBGA (LPDDR5 family) | FBGA (LPDDR5 family) |
| Brand | Samsung Electronics | Samsung Electronics | Samsung Electronics | Samsung Electronics |
| Memory Type | LPDDR5 SDRAM | LPDDR5 SDRAM | LPDDR5 SDRAM | LPDDR5 SDRAM |
| Density | 96 Gb (12 GB) | 96 Gb class | 192 Gb class (double) | 48 Gb class (half) |
| Core Supply Voltage | 1.05 V | 1.05 V | 1.05 V | 1.05 V |
| Lifecycle Status | Active | Active | Active | Active |
Principaux différenciateurs
- Highest bandwidth in family tier (vs K3LK4K40BM-BGCN)
- Single-package 12 GB density (vs K3LK2K20CM-JFCP)
- Active lifecycle with wide distributor stock (vs K3LKCKC0BM-MGCP)
Notes de conception
At 6400 Mbps, LPDDR5 point-to-point routing demands strict length matching (typically within a few mils per byte lane), solid reference planes, and controlled impedance. Minimize stubs, avoid via transitions in data groups, and follow Samsung's package layout guideline for the FBGA-496 footprint. Simulate eye diagrams at the target data rate before committing the PCB stackup; on-die termination settings in the controller should be tuned against measured channel loss.
Provide separate, tightly-regulated 1.05 V core and LPDDR5 VDDQ rails with correct power-up sequencing per the Samsung datasheet. Estimated: at full 6400 Mbps read bursts, dynamic current scales with VDDQ squared, so rail accuracy directly affects both timing margin and power. Use a PMIC with dedicated LPDDR5 rails and verify deep-sleep entry/exit current behavior in system, since idle power dominates battery-life models in mobile designs.
Do not substitute suffix variants (CM-BGCP vs BM-BGCN vs JFCP) without verifying ball count and speed binning - Samsung's K3LK codes encode package and performance class, and visually similar parts are frequently mismatched in broker channels. Source from authorized distributors with date-code and authenticity checks, and confirm the LPDDR5 JEDEC command-set support of your memory controller before layout, since LPDDR4 controllers are not compatible.
Informations de conformité
Compliance declarations are not published in the provided distributor listings; obtain RoHS/REACH certificates from Samsung Semiconductor or the authorized distributor.
