1EDN7126GXTMA1 vs 2EDN7524GXTMA1 Comparaison
Comparaison détaillée côte à côte de 1EDN7126GXTMA1 par Infineon et 2EDN7524GXTMA1 par Infineon. Comparez les spécifications clés, les paramètres électriques, le conditionnement, le statut de cycle de vie, les prix et la disponibilité pour déterminer le meilleur composant pour vos exigences de conception.
Infineon
2EDN7524GXTMA1 - 5A Dual Low-Side Gate Driver for MOSFET/GaN | Infineon
2EDN7524GXTMA1 ✓ ActifComparaison des spécifications
| Paramètre | 1EDN7126GXTMA1 | 2EDN7524GXTMA1 |
|---|---|---|
| Marque | Infineon | Infineon |
| Catégorie | Power MOSFET Drivers | Power MOSFET Drivers |
| Statut du cycle de vie | Actif | Actif |
| Statut du stock | In Stock | In Stock |
| Prix unitaire (USD) | $0,29 | $0,82 |
| Fonction | Single-channel TDI gate driver for GaN HEMT and Si MOSFET | — |
| Configuration | Non-Inverting | — |
| Channel Type | Single | — |
| Driven Supply Voltage | [DATA_NEEDED: VCC max value] | — |
| Peak Source Current | 1.5 A | — |
| Peak Sink Current | 1.5 A | — |
| Common-Mode Voltage (CMR) | 200 V | — |
| Input Type | Truly Differential Input (TDI) | — |
| Propagation Delay (Typ.) | [DATA_NEEDED: tpd typical value] | — |
| Rise / Fall Time (Typ.) | [DATA_NEEDED: tr / tf typical value] | — |
| Plage de température de fonctionnement | -40C to +125C | — |
| Boîtier | PG-VSON-10-4 | PG-WSON-8-1 (3 mm x 3 mm) with exposed thermal pad |
| Type de montage | Surface Mount | Surface Mount |
| Niveau MSL | [DATA_NEEDED: MSL rating] | [DATA_NEEDED: MSL level] |
| Statut RoHS | Compliant | Compliant |
| Reach | Compliant | — |
| Lead-Free | Yes | — |
| Input Logic Compatibility | 3.3 V / 5 V TTL/CMOS (TDI) | — |
| Product Type | — | Low-side gate driver IC |
| Number of Channels | — | 2 (dual) |
| Drive Current (Source/Sink) | — | 5 A peak |
| Input Logic | — | Non-inverting, TTL / 3.3 V CMOS-compatible |
| Input Voltage Tolerance | — | -10 V to +20 V on logic pins |
| Supply Voltage (VCC) | — | 4.5 V to 20 V [DATA_NEEDED: exact range] |
| Propagation Delay | — | 20 ns typical [DATA_NEEDED: exact figure] |
| Channel-to-Channel Delay Matching | — | 1 ns |
| Temps de montée | — | 5 ns typical [DATA_NEEDED: exact test condition] |
| Temps de descente | — | 5 ns typical [DATA_NEEDED: exact test condition] |
| Output Stage | — | Rail-to-rail, separate source/sink |
| UVLO Protection | — | Yes |
| Température de fonctionnement | — | -40 C to +125 C |
| Target Devices | — | Standard MOSFETs, superjunction MOSFETs, GaN HEMTs |