1EDN7126GXTMA1 vs 2EDN7524GXTMA1 对比

详细并排对比 1EDN7126GXTMA1 出自 Infineon 和 2EDN7524GXTMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

规格对比

参数 1EDN7126GXTMA1 2EDN7524GXTMA1
品牌 Infineon Infineon
分类 Power MOSFET Drivers Power MOSFET Drivers
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $0.29 $0.82
功能 Single-channel TDI gate driver for GaN HEMT and Si MOSFET —
Configuration Non-Inverting —
Channel Type Single —
Driven Supply Voltage [DATA_NEEDED: VCC max value] —
Peak Source Current 1.5 A —
Peak Sink Current 1.5 A —
Common-Mode Voltage (CMR) 200 V —
Input Type Truly Differential Input (TDI) —
Propagation Delay (Typ.) [DATA_NEEDED: tpd typical value] —
Rise / Fall Time (Typ.) [DATA_NEEDED: tr / tf typical value] —
工作温度范围 -40C to +125C —
封装 PG-VSON-10-4 PG-WSON-8-1 (3 mm x 3 mm) with exposed thermal pad
安装类型 Surface Mount Surface Mount
MSL 等级 [DATA_NEEDED: MSL rating] [DATA_NEEDED: MSL level]
RoHS 状态 Compliant Compliant
Reach Compliant —
Lead-Free Yes —
Input Logic Compatibility 3.3 V / 5 V TTL/CMOS (TDI) —
Product Type — Low-side gate driver IC
Number of Channels — 2 (dual)
Drive Current (Source/Sink) — 5 A peak
Input Logic — Non-inverting, TTL / 3.3 V CMOS-compatible
Input Voltage Tolerance — -10 V to +20 V on logic pins
Supply Voltage (VCC) — 4.5 V to 20 V [DATA_NEEDED: exact range]
Propagation Delay — 20 ns typical [DATA_NEEDED: exact figure]
Channel-to-Channel Delay Matching — 1 ns
上升时间 — 5 ns typical [DATA_NEEDED: exact test condition]
下降时间 — 5 ns typical [DATA_NEEDED: exact test condition]
Output Stage — Rail-to-rail, separate source/sink
UVLO Protection — Yes
工作温度 — -40 C to +125 C
Target Devices — Standard MOSFETs, superjunction MOSFETs, GaN HEMTs

数据手册与资源

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