1EDN7126GXTMA1 vs 2EDN7524GXTMA1 比較
詳細な並列比較: 1EDN7126GXTMA1 メーカー: Infineon および 2EDN7524GXTMA1 メーカー: Infineon。主要仕様、電気的特性、パッケージ、ライフサイクルステータス、価格、在庫状況を比較して、設計要件に最適な部品を判断してください。
Infineon
2EDN7524GXTMA1 - 5A Dual Low-Side Gate Driver for MOSFET/GaN | Infineon
2EDN7524GXTMA1 ✓ 生産中仕様比較
| パラメータ | 1EDN7126GXTMA1 | 2EDN7524GXTMA1 |
|---|---|---|
| ブランド | Infineon | Infineon |
| カテゴリ | Power MOSFET Drivers | Power MOSFET Drivers |
| ライフサイクル状態 | 有効 | 有効 |
| 在庫状況 | In Stock | In Stock |
| 単価（USD） | $0.29 | $0.82 |
| 機能 | Single-channel TDI gate driver for GaN HEMT and Si MOSFET | — |
| Configuration | Non-Inverting | — |
| Channel Type | Single | — |
| Driven Supply Voltage | [DATA_NEEDED: VCC max value] | — |
| Peak Source Current | 1.5 A | — |
| Peak Sink Current | 1.5 A | — |
| Common-Mode Voltage (CMR) | 200 V | — |
| Input Type | Truly Differential Input (TDI) | — |
| Propagation Delay (Typ.) | [DATA_NEEDED: tpd typical value] | — |
| Rise / Fall Time (Typ.) | [DATA_NEEDED: tr / tf typical value] | — |
| 動作温度範囲 | -40C to +125C | — |
| パッケージ | PG-VSON-10-4 | PG-WSON-8-1 (3 mm x 3 mm) with exposed thermal pad |
| 実装タイプ | Surface Mount | Surface Mount |
| MSLレベル | [DATA_NEEDED: MSL rating] | [DATA_NEEDED: MSL level] |
| RoHS ステータス | Compliant | Compliant |
| Reach | Compliant | — |
| Lead-Free | Yes | — |
| Input Logic Compatibility | 3.3 V / 5 V TTL/CMOS (TDI) | — |
| Product Type | — | Low-side gate driver IC |
| Number of Channels | — | 2 (dual) |
| Drive Current (Source/Sink) | — | 5 A peak |
| Input Logic | — | Non-inverting, TTL / 3.3 V CMOS-compatible |
| Input Voltage Tolerance | — | -10 V to +20 V on logic pins |
| Supply Voltage (VCC) | — | 4.5 V to 20 V [DATA_NEEDED: exact range] |
| Propagation Delay | — | 20 ns typical [DATA_NEEDED: exact figure] |
| Channel-to-Channel Delay Matching | — | 1 ns |
| 立ち上がり時間 | — | 5 ns typical [DATA_NEEDED: exact test condition] |
| 立ち下がり時間 | — | 5 ns typical [DATA_NEEDED: exact test condition] |
| Output Stage | — | Rail-to-rail, separate source/sink |
| UVLO Protection | — | Yes |
| 動作温度 | — | -40 C to +125 C |
| Target Devices | — | Standard MOSFETs, superjunction MOSFETs, GaN HEMTs |