2EDL8034G4CXTMA1 vs 2EDL900G3XTMA1 Comparaison
Comparaison détaillée côte à côte de 2EDL8034G4CXTMA1 par Infineon et 2EDL900G3XTMA1 par Infineon. Comparez les spécifications clés, les paramètres électriques, le conditionnement, le statut de cycle de vie, les prix et la disponibilité pour déterminer le meilleur composant pour vos exigences de conception.
Comparaison des spécifications
| Paramètre | 2EDL8034G4CXTMA1 | 2EDL900G3XTMA1 |
|---|---|---|
| Marque | Infineon | Infineon |
| Catégorie | Power MOSFET Drivers | Power MOSFET Drivers |
| Statut du cycle de vie | Actif | Actif |
| Statut du stock | In Stock | In Stock |
| Prix unitaire (USD) | $1,55 | $2,20 |
| Driver Type | Half-Bridge (High-Side / Low-Side) | — |
| Configuration | Non-Inverting | — |
| Bootstrap Voltage (Max) | 120 V | — |
| Peak Source Current | 3 A | 4 A |
| Peak Sink Current | 4 A | 6 A |
| Nombre de sorties | 2 | — |
| Rise Time (Typical) | [DATA_NEEDED: rise time ns] | — |
| Fall Time (Typical) | [DATA_NEEDED: fall time ns] | — |
| Propagation Delay (Typical) | [DATA_NEEDED: propagation delay ns] | — |
| Input Logic Compatibility | 3.3 V / 5 V | 3.3 V / 5 V / TTL (per datasheet) |
| VCC Supply Voltage | [DATA_NEEDED: VCC range V] | — |
| UVLO Protection | Yes (VCC and VBS) | — |
| Isolation Type | Junction-isolated (level-shifted) | Junction isolation (JI), 120 V |
| ESD Rating (HBM) | [DATA_NEEDED: ESD HBM kV] | — |
| Température de jonction en fonctionnement | -40 C to +125 C | — |
| Boîtier | PG-VDSON-10-2 (DSN-10) with exposed pad | TSNP-16 (3x3 mm) with exposed pad |
| Type de montage | Surface Mount | Surface Mount |
| Lead-Free / RoHS | Yes (per Infineon product page) | — |
| Niveau MSL | [DATA_NEEDED: MSL level] | 1 |
| Product Type | — | Dual-channel level-shift gate driver IC |
| Topology Supported | — | Half-bridge, high-side, low-side |
| Number of Channels | — | 2 (high-side + low-side) |
| Drive Output Voltage Range | — | 4 V to 16 V |
| Supply Voltage (VDD/VBS) | — | 4 V to 16 V |
| Switching Device Supported | — | Si MOSFET, enhancement-mode GaN FET |
| Configurable Deadtime | — | Yes (programmable) |
| Integrated Current Sense Amplifier | — | Yes |
| PWM Modes | — | Tri-state, HSCC HS, HSCC LS, Hi/Li, Hi/Li inverted |
| Plage de température de fonctionnement | — | -40 C to +125 C |
| Statut RoHS | — | Compliant |