2EDL8034G4CXTMA1 vs 2EDL900G3XTMA1 Comparison
Detailed side-by-side comparison of 2EDL8034G4CXTMA1 by Infineon and 2EDL900G3XTMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
2EDL900G3XTMA1 - 120V Dual Half-Bridge Gate Driver 4A/6A | Infineon
2EDL900G3XTMA1 β ActiveSpecification Comparison
| Parameter | 2EDL8034G4CXTMA1 | 2EDL900G3XTMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | Power MOSFET Drivers | Power MOSFET Drivers |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $1.55 | $2.20 |
| Driver Type | Half-Bridge (High-Side / Low-Side) | β |
| Configuration | Non-Inverting | β |
| Bootstrap Voltage (Max) | 120 V | β |
| Peak Source Current | 3 A | 4 A |
| Peak Sink Current | 4 A | 6 A |
| Number of Outputs | 2 | β |
| Rise Time (Typical) | [DATA_NEEDED: rise time ns] | β |
| Fall Time (Typical) | [DATA_NEEDED: fall time ns] | β |
| Propagation Delay (Typical) | [DATA_NEEDED: propagation delay ns] | β |
| Input Logic Compatibility | 3.3 V / 5 V | 3.3 V / 5 V / TTL (per datasheet) |
| VCC Supply Voltage | [DATA_NEEDED: VCC range V] | β |
| UVLO Protection | Yes (VCC and VBS) | β |
| Isolation Type | Junction-isolated (level-shifted) | Junction isolation (JI), 120 V |
| ESD Rating (HBM) | [DATA_NEEDED: ESD HBM kV] | β |
| Operating Junction Temperature | -40 C to +125 C | β |
| Package | PG-VDSON-10-2 (DSN-10) with exposed pad | TSNP-16 (3x3 mm) with exposed pad |
| Mounting Type | Surface Mount | Surface Mount |
| Lead-Free / RoHS | Yes (per Infineon product page) | β |
| MSL Level | [DATA_NEEDED: MSL level] | 1 |
| Product Type | β | Dual-channel level-shift gate driver IC |
| Topology Supported | β | Half-bridge, high-side, low-side |
| Number of Channels | β | 2 (high-side + low-side) |
| Drive Output Voltage Range | β | 4 V to 16 V |
| Supply Voltage (VDD/VBS) | β | 4 V to 16 V |
| Switching Device Supported | β | Si MOSFET, enhancement-mode GaN FET |
| Configurable Deadtime | β | Yes (programmable) |
| Integrated Current Sense Amplifier | β | Yes |
| PWM Modes | β | Tri-state, HSCC HS, HSCC LS, Hi/Li, Hi/Li inverted |
| Operating Temperature Range | β | -40 C to +125 C |
| RoHS Status | β | Compliant |