2EDL8034G4CXTMA1 vs 2EDL900G3XTMA1 对比
详细并排对比 2EDL8034G4CXTMA1 出自 Infineon 和 2EDL900G3XTMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | 2EDL8034G4CXTMA1 | 2EDL900G3XTMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 分类 | Power MOSFET Drivers | Power MOSFET Drivers |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $1.55 | $2.20 |
| Driver Type | Half-Bridge (High-Side / Low-Side) | — |
| Configuration | Non-Inverting | — |
| Bootstrap Voltage (Max) | 120 V | — |
| Peak Source Current | 3 A | 4 A |
| Peak Sink Current | 4 A | 6 A |
| 输出数量 | 2 | — |
| Rise Time (Typical) | [DATA_NEEDED: rise time ns] | — |
| Fall Time (Typical) | [DATA_NEEDED: fall time ns] | — |
| Propagation Delay (Typical) | [DATA_NEEDED: propagation delay ns] | — |
| Input Logic Compatibility | 3.3 V / 5 V | 3.3 V / 5 V / TTL (per datasheet) |
| VCC Supply Voltage | [DATA_NEEDED: VCC range V] | — |
| UVLO Protection | Yes (VCC and VBS) | — |
| Isolation Type | Junction-isolated (level-shifted) | Junction isolation (JI), 120 V |
| ESD Rating (HBM) | [DATA_NEEDED: ESD HBM kV] | — |
| 工作结温 | -40 C to +125 C | — |
| 封装 | PG-VDSON-10-2 (DSN-10) with exposed pad | TSNP-16 (3x3 mm) with exposed pad |
| 安装类型 | Surface Mount | Surface Mount |
| Lead-Free / RoHS | Yes (per Infineon product page) | — |
| MSL 等级 | [DATA_NEEDED: MSL level] | 1 |
| Product Type | — | Dual-channel level-shift gate driver IC |
| Topology Supported | — | Half-bridge, high-side, low-side |
| Number of Channels | — | 2 (high-side + low-side) |
| Drive Output Voltage Range | — | 4 V to 16 V |
| Supply Voltage (VDD/VBS) | — | 4 V to 16 V |
| Switching Device Supported | — | Si MOSFET, enhancement-mode GaN FET |
| Configurable Deadtime | — | Yes (programmable) |
| Integrated Current Sense Amplifier | — | Yes |
| PWM Modes | — | Tri-state, HSCC HS, HSCC LS, Hi/Li, Hi/Li inverted |
| 工作温度范围 | — | -40 C to +125 C |
| RoHS 状态 | — | Compliant |