2EDL8034G4CXTMA1 vs 2EDL900G3XTMA1 Comparação
Comparação detalhada lado a lado de 2EDL8034G4CXTMA1 por Infineon e 2EDL900G3XTMA1 por Infineon. Compare especificações principais, parâmetros elétricos, encapsulamento, status do ciclo de vida, preços e disponibilidade para determinar o melhor componente para os requisitos do seu projeto.
Comparação de especificações
| Parâmetro | 2EDL8034G4CXTMA1 | 2EDL900G3XTMA1 |
|---|---|---|
| Marca | Infineon | Infineon |
| Categoria | Power MOSFET Drivers | Power MOSFET Drivers |
| Status do ciclo de vida | Ativo | Ativo |
| Status do estoque | In Stock | In Stock |
| Preço unitário (USD) | $1,55 | $2,20 |
| Driver Type | Half-Bridge (High-Side / Low-Side) | — |
| Configuration | Non-Inverting | — |
| Bootstrap Voltage (Max) | 120 V | — |
| Peak Source Current | 3 A | 4 A |
| Peak Sink Current | 4 A | 6 A |
| Número de saídas | 2 | — |
| Rise Time (Typical) | [DATA_NEEDED: rise time ns] | — |
| Fall Time (Typical) | [DATA_NEEDED: fall time ns] | — |
| Propagation Delay (Typical) | [DATA_NEEDED: propagation delay ns] | — |
| Input Logic Compatibility | 3.3 V / 5 V | 3.3 V / 5 V / TTL (per datasheet) |
| VCC Supply Voltage | [DATA_NEEDED: VCC range V] | — |
| UVLO Protection | Yes (VCC and VBS) | — |
| Isolation Type | Junction-isolated (level-shifted) | Junction isolation (JI), 120 V |
| ESD Rating (HBM) | [DATA_NEEDED: ESD HBM kV] | — |
| Temperatura de junção de operação | -40 C to +125 C | — |
| Encapsulamento | PG-VDSON-10-2 (DSN-10) with exposed pad | TSNP-16 (3x3 mm) with exposed pad |
| Tipo de montagem | Surface Mount | Surface Mount |
| Lead-Free / RoHS | Yes (per Infineon product page) | — |
| Nível MSL | [DATA_NEEDED: MSL level] | 1 |
| Product Type | — | Dual-channel level-shift gate driver IC |
| Topology Supported | — | Half-bridge, high-side, low-side |
| Number of Channels | — | 2 (high-side + low-side) |
| Drive Output Voltage Range | — | 4 V to 16 V |
| Supply Voltage (VDD/VBS) | — | 4 V to 16 V |
| Switching Device Supported | — | Si MOSFET, enhancement-mode GaN FET |
| Configurable Deadtime | — | Yes (programmable) |
| Integrated Current Sense Amplifier | — | Yes |
| PWM Modes | — | Tri-state, HSCC HS, HSCC LS, Hi/Li, Hi/Li inverted |
| Faixa de temperatura de operação | — | -40 C to +125 C |
| Status RoHS | — | Compliant |