BSC009NE2LS5IATMA1 vs IRFS7530TRLPBF Comparaison
Comparaison détaillée côte à côte de BSC009NE2LS5IATMA1 par Infineon et IRFS7530TRLPBF par Infineon. Comparez les spécifications clés, les paramètres électriques, le conditionnement, le statut de cycle de vie, les prix et la disponibilité pour déterminer le meilleur composant pour vos exigences de conception.
Infineon
BSC009NE2LS5IATMA1 - 25V 0.95mΩ 217A OptiMOS 5 N-MOSFET | Infineon
BSC009NE2LS5IATMA1 ✓ Actif
Comparaison des spécifications
| Paramètre | BSC009NE2LS5IATMA1 | IRFS7530TRLPBF |
|---|---|---|
| Marque | Infineon | Infineon |
| Catégorie | MOSFETs | MOSFETs |
| Statut du cycle de vie | Actif | Actif |
| Statut du stock | In Stock | In Stock |
| Prix unitaire (USD) | $1,02 | $1,72 |
| Manufacturer Part Number | BSC009NE2LS5IATMA1 | — |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Technology | OptiMOS™ 5 (25V/30V family) | StrongIRFET™ (N-Channel Trench MOSFET) |
| Type de transistor | N-Channel MOSFET | — |
| Configuration | Single with built-in diode | — |
| Drain-Source Voltage (V_DS) max | 25 V | — |
| Gate-Source Voltage (V_GS) max | 20 V | — |
| Gate-Threshold Voltage V_GS(th) typ | 1.7 V (range 1.0-2.0 V) | — |
| R_DS(on) max @ V_GS=10V | 0.95 mΩ | — |
| Continuous Drain Current (I_D) @ T_A=25°C | 40 A | — |
| Continuous Drain Current (I_D) @ T_C=25°C | 217 A (pulsed, datasheet rating) | — |
| Power Dissipation (P_D) @ T_A | 2.5 W | — |
| Power Dissipation (P_D) @ T_C | 74 W | — |
| Total Gate Charge (Q_G) typ | 23 nC @ V_GS=0-4.5V | — |
| Input Capacitance (C_iss) typ | 3200 pF | — |
| Plage de température de fonctionnement | -55°C to +150°C | -55 °C to +175 °C (Tj) |
| Boîtier | PG-TDSON-8-7 (SuperSO8 5x6 mm) | — |
| Type de montage | Surface Mount | Surface Mount |
| Niveau MSL | 1 (per JEDEC J-STD-020) | — |
| Terminal Finish | Matte Tin (e3 per JESD-609) | — |
| Number of Terminals | 8 | — |
| Statut RoHS | Compliant | — |
| Part Number | — | IRFS7530TRLPBF |
| Drain-Source Voltage (VDS) Max | — | 60 V |
| Continuous Drain Current (ID) at Tc=25°C | — | 195 A |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: pulsed drain current] |
| On-Resistance RDS(on) Max @ VGS=10V | — | 2 mΩ |
| Gate Threshold Voltage VGS(th) | — | [DATA_NEEDED: gate threshold voltage] |
| Gate Charge Qg Typ | — | [DATA_NEEDED: typical gate charge] |
| Total Power Dissipation (PD) at Tc=25°C | — | 375 W |
| Boîtier / Format | — | PG-TO263-2 (D2PAK, TO-263) |
| Packaging | — | Tape & Reel (TR) |
| Lead-Free / RoHS | — | Yes (PBF suffix) |
| Pin Configuration | — | 3-Pin (Gate, Drain tab, Source) |
| Series | — | StrongIRFET™ |