BSC009NE2LS5IATMA1 vs IRFS7530TRLPBF 对比

详细并排对比 BSC009NE2LS5IATMA1 出自 Infineon 和 IRFS7530TRLPBF 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

规格对比

参数 BSC009NE2LS5IATMA1 IRFS7530TRLPBF
品牌 Infineon Infineon
分类 MOSFETs MOSFETs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $1.02 $1.72
Manufacturer Part Number BSC009NE2LS5IATMA1 —
Manufacturer Infineon Technologies Infineon Technologies
Technology OptiMOS™ 5 (25V/30V family) StrongIRFET™ (N-Channel Trench MOSFET)
晶体管类型 N-Channel MOSFET —
Configuration Single with built-in diode —
Drain-Source Voltage (V_DS) max 25 V —
Gate-Source Voltage (V_GS) max 20 V —
Gate-Threshold Voltage V_GS(th) typ 1.7 V (range 1.0-2.0 V) —
R_DS(on) max @ V_GS=10V 0.95 mΩ —
Continuous Drain Current (I_D) @ T_A=25°C 40 A —
Continuous Drain Current (I_D) @ T_C=25°C 217 A (pulsed, datasheet rating) —
Power Dissipation (P_D) @ T_A 2.5 W —
Power Dissipation (P_D) @ T_C 74 W —
Total Gate Charge (Q_G) typ 23 nC @ V_GS=0-4.5V —
Input Capacitance (C_iss) typ 3200 pF —
工作温度范围 -55°C to +150°C -55 °C to +175 °C (Tj)
封装 PG-TDSON-8-7 (SuperSO8 5x6 mm) —
安装类型 Surface Mount Surface Mount
MSL 等级 1 (per JEDEC J-STD-020) —
Terminal Finish Matte Tin (e3 per JESD-609) —
Number of Terminals 8 —
RoHS 状态 Compliant —
Part Number — IRFS7530TRLPBF
Drain-Source Voltage (VDS) Max — 60 V
Continuous Drain Current (ID) at Tc=25°C — 195 A
Pulsed Drain Current (IDM) — [DATA_NEEDED: pulsed drain current]
On-Resistance RDS(on) Max @ VGS=10V — 2 mΩ
Gate Threshold Voltage VGS(th) — [DATA_NEEDED: gate threshold voltage]
Gate Charge Qg Typ — [DATA_NEEDED: typical gate charge]
Total Power Dissipation (PD) at Tc=25°C — 375 W
封装 / 外壳 — PG-TO263-2 (D2PAK, TO-263)
Packaging — Tape & Reel (TR)
Lead-Free / RoHS — Yes (PBF suffix)
Pin Configuration — 3-Pin (Gate, Drain tab, Source)
Series — StrongIRFET™

数据手册与资源

浏览全部产品 创建 BOM 获取报价