BSC010N04LSATMA1 vs ISC015N04NM5ATMA1 Comparaison
Comparaison détaillée côte à côte de BSC010N04LSATMA1 par Infineon et ISC015N04NM5ATMA1 par Infineon. Comparez les spécifications clés, les paramètres électriques, le conditionnement, le statut de cycle de vie, les prix et la disponibilité pour déterminer le meilleur composant pour vos exigences de conception.
Comparaison des spécifications
| Paramètre | BSC010N04LSATMA1 | ISC015N04NM5ATMA1 |
|---|---|---|
| Marque | Infineon | Infineon |
| Catégorie | MOSFETs | MOSFETs |
| Statut du cycle de vie | Actif | Actif |
| Statut du stock | In Stock | In Stock |
| Prix unitaire (USD) | $0,52 | $0,98 |
| Transistor Polarity | N-Channel | — |
| Drain-Source Breakdown Voltage (VDS) | 40 V | — |
| Gate-Source Voltage (VGS) Max | +/- 20 V | — |
| Continuous Drain Current (ID, Tc=25C) | 100 A | — |
| Continuous Drain Current (ID, Ta=25C) | 38 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | [DATA_NEEDED: pulsed IDM rating] |
| On-Resistance RDS(on) Max @ VGS=10V | 1.0 mOhm | — |
| On-Resistance RDS(on) Test Condition | VGS = 10 V, ID = 50 A | — |
| Gate Threshold Voltage VGS(th) Typ | 2 V | — |
| Total Gate Charge Qg | [DATA_NEEDED: total gate charge] | — |
| Power Dissipation (Tc=25C) | 139 W | — |
| Power Dissipation (Ta=25C) | 2.5 W | — |
| Plage de température de fonctionnement | -55C to +150C | -55 C to +175 C (junction, per OptiMOS 5) |
| Boîtier | PG-TDSON-8 FL (SuperSO8 5x6) | — |
| Type de montage | Surface Mount | Surface Mount |
| Niveau MSL | 1 | 1 (per Infineon SuperSO8 family) |
| RoHS / Halogen-Free | RoHS compliant, halogen-free | — |
| Technology | OptiMOS 5 | OptiMOS 5 (trench MOSFET) |
| Avalanche Rated | 100% avalanche tested | — |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | — | OptiMOS 5 40V Normal Level |
| FET Type | — | N-Channel |
| Drain-Source Voltage (VDS) | — | 40 V |
| Gate-Source Voltage (VGS) | — | [DATA_NEEDED: VGS max rating] |
| Gate Threshold Voltage (VGS(th)) | — | 3.4 V (typ) |
| R_DS(on) max | — | 1.5 mOhm @ VGS=10 V, ID=50 A |
| Continuous Drain Current (ID) at Ta=25C | — | 33 A |
| Continuous Drain Current (ID) at Tc=25C | — | 206 A |
| Power Dissipation (Ta) | — | 3 W |
| Power Dissipation (Tc) | — | 115 W |
| Boîtier / Format | — | PG-TDSON-8 FL (SuperSO8 5x6 mm) |
| Nombre de broches | — | 8 |
| Statut RoHS | — | Compliant |
| Drive Level | — | Normal Level (VGS(th) ~3.4 V) |