BSC010N04LSATMA1 vs ISC015N04NM5ATMA1 Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng BSC010N04LSATMA1 sa pamamagitan ng Infineon at ISC015N04NM5ATMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Infineon
ISC015N04NM5ATMA1 - 40V 1.5mOhm OptiMOS 5 N-MOSFET | Infineon
ISC015N04NM5ATMA1 ✓ NakahandaPagsanggunian na paghahambing
| Parametro | BSC010N04LSATMA1 | ISC015N04NM5ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Kategorya | MOSFETs | MOSFETs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Transistor Polarity | N-Channel | — |
| Drain-Source Breakdown Voltage (VDS) | 40 V | — |
| Gate-Source Voltage (VGS) Max | +/- 20 V | — |
| Continuous Drain Current (ID, Tc=25C) | 100 A | — |
| Continuous Drain Current (ID, Ta=25C) | 38 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | [DATA_NEEDED: pulsed IDM rating] |
| On-Resistance RDS(on) Max @ VGS=10V | 1.0 mOhm | — |
| On-Resistance RDS(on) Test Condition | VGS = 10 V, ID = 50 A | — |
| Gate Threshold Voltage VGS(th) Typ | 2 V | — |
| Total Gate Charge Qg | [DATA_NEEDED: total gate charge] | — |
| Power Dissipation (Tc=25C) | 139 W | — |
| Power Dissipation (Ta=25C) | 2.5 W | — |
| Hanay ng Temperature na Operasyon | -55C to +150C | -55 C to +175 C (junction, per OptiMOS 5) |
| Packhaging | PG-TDSON-8 FL (SuperSO8 5x6) | — |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Level ng MSL | 1 | 1 (per Infineon SuperSO8 family) |
| RoHS / Halogen-Free | RoHS compliant, halogen-free | — |
| Technology | OptiMOS 5 | OptiMOS 5 (trench MOSFET) |
| Avalanche Rated | 100% avalanche tested | — |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | — | OptiMOS 5 40V Normal Level |
| FET Type | — | N-Channel |
| Drain-Source Voltage (VDS) | — | 40 V |
| Gate-Source Voltage (VGS) | — | [DATA_NEEDED: VGS max rating] |
| Gate Threshold Voltage (VGS(th)) | — | 3.4 V (typ) |
| R_DS(on) max | — | 1.5 mOhm @ VGS=10 V, ID=50 A |
| Continuous Drain Current (ID) at Ta=25C | — | 33 A |
| Continuous Drain Current (ID) at Tc=25C | — | 206 A |
| Power Dissipation (Ta) | — | 3 W |
| Power Dissipation (Tc) | — | 115 W |
| Packhaging / Kaso | — | PG-TDSON-8 FL (SuperSO8 5x6 mm) |
| Bilang ng Pin | — | 8 |
| Tindminan RoHS | — | Compliant |
| Drive Level | — | Normal Level (VGS(th) ~3.4 V) |