IPG20N10S4L35ATMA1 - 100V Dual N-Ch MOSFET, 35mΩ | Infineon
Référence : IPG20N10S4L35ATMA1 ✓ Actif| Qté | Prix unitaire | Total |
|---|---|---|
| 1 | $1.18 | $1,18 |
| 10 | $1.05 | $10,50 |
| 100 | $0.93 | $93,00 |
| 500 | $0.82 | $410,00 |
| 1 000 | $0.74 | $740,00 |
| 5 000 | $0.66 | $3 300,00 |
IPG20N10S4L35ATMA1 Présentation
A MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a voltage-controlled semiconductor switch that uses an insulated gate to modulate current flow between source and drain terminals. Dual N-channel MOSFET arrays belong to the broader category of discrete power semiconductors within power management and motor/relay driver subsystems. Logic-level gate drive (V<sub>GS(th)</sub> ≈1-2 V) allows direct interfacing with 3.3 V or 5 V microcontrollers without level-shifting, while OptiMOS™ technology reduces gate charge (Q<sub>G</sub>) and switching losses versus earlier planar generations.
Key features include 100 V drain-to-source rating, 35 mΩ maximum on-resistance at V<sub>GS</sub>=10 V and I<sub>D</sub>=17 A, logic-level gate threshold, and AEC-Q101 automotive qualification with 175°C operating temperature. The PG-TDSON-8-4 package exposes a large metal pad for low thermal resistance (≈1 K/W on a 1 in² 1 oz copper pour) and supports MSL1 to 260°C peak reflow. 100% avalanche-rated devices survive unclamped inductive switching events common in relay and solenoid drive applications.
Typical applications include automotive LED lighting drivers, H-bridge motor half-bridges, DC-DC converter synchronous rectifiers, and high-side/low-side load switches in 12 V/24 V automotive systems. The dual-channel arrangement suits full-bridge configurations where two MOSFETs switch in complementary fashion across a load.
When designing with this device, ensure the gate drive voltage reaches at least 4.5 V for full enhancement and adequate R<sub>DS(on)</sub>. Place gate-series resistors in the 10-100 Ω range to damp ringing, and route the switching node (half-bridge midpoint) away from sensitive analog traces to minimize EMI coupling.
Alternatives de remplacement direct pour IPG20N10S4L35ATMA1 — même boîtier, compatible broche à broche. Les références à boîtier différent nécessitant une retouche du PCB sont exclues.
Variantes de cette série
Modèles de la même série directement compatibles avec IPG20N10S4L35ATMA1 (même facteur de forme et même empreinte) — différant par FET Type, MSL Level, Technology, Package, Operating Temperature Range.
Outil de comparaison rapide — sélectionnez des références alternatives pour une comparaison côte à côte :
IPG20N10S4L-35
✅ Remplacement direct ⚠️ Spécifications non vérifiées📋 Alternative de référence (hors catalogue)
IPG20N06S2L65AATMA1
✅ Remplacement direct✓ En stock
$0.78 / unité
Voir la fiche technique →IPG20N04S408ATMA1
✅ Remplacement direct✓ En stock
$0.78 / unité
Voir la fiche technique →IPG20N04S4L11ATMA1
✅ Remplacement direct✓ En stock
$0.39 / unité
Voir la fiche technique →BSC027N06LS5ATMA1
✅ Remplacement direct✓ En stock
$0.66 / unité
Voir la fiche technique →IPG20N10S4L35ATMA1 Valeurs maximales et caractéristiques électriques
| Manufacturer | Infineon Technologies |
| Part Number | IPG20N10S4L35ATMA1 |
| FET Type | 2 N-Channel (Dual) |
| FET Feature | Logic Level Gate |
| Drain-to-Source Voltage (V<sub>DSS</sub>) | 100 V |
| Continuous Drain Current (I<sub>D</sub>) at 25°C | 20 A |
| R<sub>DS(on)</sub> Max | 35 mΩ @ V<sub>GS</sub>=10 V, I<sub>D</sub>=17 A |
| Power Dissipation (P<sub>D</sub>) | 43 W |
| Température de fonctionnement | 175°C max junction |
| Type de montage | Surface Mount |
| Boîtier / Format | PG-TDSON-8-4 (8-Pin TDSON EP) |
| Automotive Qualification | AEC-Q101 |
| Niveau MSL | MSL1 (up to 260°C peak reflow) |
| Series | OptiMOS™, Automotive |
| Statut RoHS | Compliant (Green Product) |
| Avalanche Rated | 100% Avalanche Tested |
Configuration des broches de IPG20N10S4L35ATMA1
| Broche 1 | Source 1 (S1) — Source of MOSFET 1 |
| Broche 2 | Gate 1 (G1) — Gate of MOSFET 1 (logic-level) |
| Broche 3 | Source 2 (S2) — Source of MOSFET 2 |
| Broche 4 | Gate 2 (G2) — Gate of MOSFET 2 (logic-level) |
| Broche 5-7 | NC / Drain — Connected internally to drain and exposed pad |
| Broche 8 | Drain (D) — Common drain for both MOSFETs (also thermal pad) |
Zone de fonctionnement sûr
Applications typiques
IPG20N10S4L35ATMA1 convient pour 6 applications: Automotive LED Lighting Driver, H-Bridge Motor Half-Bridge, Synchronous Rectifier in DC-DC Converters, Solenoid and Relay Driver, Battery Management Protection Switch, Industrial 24V Bus Switching.
Automotive LED Lighting Driver
The IPG20N10S4L35ATMA1 is purpose-built for automotive LED headlight and daytime running light drivers operating on 12 V/24 V bus rails. Its 100 V V<sub>DSS</sub> rating provides substantial margin above the 12 V nominal (which can spike to 35-40 V under load-dump), while 35 mΩ R<sub>DS(on)</sub> keeps conduction loss acceptable at 5-10 A LED string currents. The dual-channel arrangement drives two LED banks or supports high-side/low-side PWM dimming topologies; 100% avalanche rating survives the inductive kickback of long LED wiring harnesses without external TVS protection, simplifying the BOM. AEC-Q101 qualification with 175°C junction temperature ensures reliability underhood.
Recommandé
H-Bridge Motor Half-Bridge
In brushed-DC motor half-bridge and H-bridge topologies, the IPG20N10S4L35ATMA1 provides the matched complementary-pair switching required for symmetric PWM operation. Each MOSFET handles up to 20 A continuous current suitable for small DC motors, fans, and pumps (window lift, seat adjusters, blower fans). The 100 V rating tolerates the back-EMF generated when switching inductive loads, while the logic-level gate allows direct drive from 3.3 V microcontrollers like Infineon XMC1000 or NXP S32K without bootstrap or gate-driver level shifting. The shared thermal pad simplifies PCB layout and provides excellent thermal dissipation for sustained motor drive.
Recommandé
Synchronous Rectifier in DC-DC Converters
The IPG20N10S4L35ATMA1 functions effectively as a synchronous rectifier in 12 V-to-low-voltage buck converters for automotive power distribution. Its low 35 mΩ R<sub>DS(on)</sub> reduces rectification loss versus Schottky diodes, especially at 5-10 A loads, while 100 V V<sub>DSS</sub> comfortably handles the maximum input transient on a 24 V automotive rail. The dual MOSFET configuration fits a buck-and-boost or two-phase buck topology in a single small package, saving board space. AEC-Q101 qualification and 175°C junction temperature support under-hood placement adjacent to engine controllers.
Recommandé
Solenoid and Relay Driver
Automotive solenoids (transmission shift, valve, EV charger lock) and high-current relays are switched by the IPG20N10S4L35ATMA1 in low-side or high-side configurations. The 100 V V<sub>DSS</sub> rating tolerates the flyback voltage from 50-100 mH solenoids when de-energized; combined with 100% avalanche-tested rating, the MOSFET absorbs unclamped inductive kickback without external TVS protection. Logic-level gate threshold enables direct GPIO drive from automotive MCUs, and 20 A continuous current handles most automotive solenoid and relay coil currents. The dual-channel arrangement controls two solenoids from one footprint.
Recommandé
Battery Management Protection Switch
In 12 V/24 V automotive battery management systems (BMS), the IPG20N10S4L35ATMA1 serves as a low-loss protection/disconnect switch. Its 35 mΩ R<sub>DS(on)</sub> keeps path loss low at 10-20 A continuous battery currents, while 100 V V<sub>DSS</sub> handles jump-start and load-dump transients up to ~100 V. AEC-Q101 qualification ensures reliability for safety-critical battery isolation. The dual MOSFET supports combined charge/discharge path switching in a single small footprint, simplifying BMS hardware.
Recommandé
Industrial 24V Bus Switching
Beyond automotive, the IPG20N10S4L35ATMA1 suits industrial 24V PLC and factory-automation switching applications where moderate voltage and current are required. Its 100 V V<sub>DSS</sub> rating tolerates 24 V industrial transients and short over-voltage events, while logic-level gate drive interfaces directly with 3.3 V/5 V industrial controllers. The dual-channel arrangement simplifies half-bridge and H-bridge actuator drives common in industrial valve and motor control. AEC-Q101 qualification provides enhanced reliability margins versus standard industrial-grade MOSFETs.
Recommandé
Récapitulatif des produits recommandés
Données de référence d'ingénierie pour IPG20N10S4L35ATMA1 — comparaison, recommandations de conception et informations de conformité.
Guide de sélection
Comparaison avec les alternatives
| Paramètre | Ce produit | IPG20N10S4L-35 | IPG20N06S2L65AATMA1 | IPG20N04S408ATMA1 | IPG20N04S4L11ATMA1 | BSC027N06LS5ATMA1 |
|---|---|---|---|---|---|---|
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| Package | PG-TDSON-8-4 | PG-TDSON-8-4 | PG-TDSON-8-4 | PG-TDSON-8-4 | PG-TDSON-8-4 | PG-TDSON-8-4 |
| V<sub>DSS</sub> | 100 V | 100 V | 60 V | 40 V | 40 V | 60 V |
| R<sub>DS(on)</sub> Max | 35 mΩ | 35 mΩ | 65 mΩ | 8 mΩ | 11 mΩ | 27 mΩ |
| Channel Configuration | Dual N-Channel | Dual N-Channel | Dual N-Channel | Dual N-Channel | Dual N-Channel | Single N-Channel |
Principaux différenciateurs
- Dual 100 V MOSFETs in single PG-TDSON-8-4 footprint (vs Single-channel BSC027N06LS5ATMA1)
- AEC-Q101 automotive qualified (vs IPG20N10S4L-35 (engineering sample))
- 100% avalanche-tested rating (vs Generic 100 V dual MOSFETs)
Notes de conception
Estimated: at I<sub>D</sub>=10 A continuous with R<sub>DS(on)</sub>=35 mΩ at 100°C junction, conduction loss is P=I²R=10²×0.035=3.5 W per channel. With PG-TDSON-8-4 θ<sub>JA</sub>≈50 K/W on a 1 in² 1 oz copper pour (JEDEC EIA/JESD51), junction rises 175 K above 25°C ambient, requiring thermal management. At 20 A per channel (7 W each), heatsinking or substantial copper pour (≥2 in²) is required to stay below 175°C junction. The exposed drain pad must be soldered to a continuous copper pour with multiple thermal vias to the bottom layer for optimal dissipation.
Place the gate drive traces as short as possible (≤10 mm) to minimize parasitic inductance that causes gate ringing and possible dv/dt-induced false turn-on. Add a 10-100 Ω gate-source resistor on each channel to damp LC ringing, and consider a small gate-source capacitor (1-10 nF) to suppress Miller-induced turn-on in half-bridge configurations. The switching-node (half-bridge midpoint) trace must be kept narrow and surrounded by ground copper to minimize EMI coupling into analog circuits.
Do not exceed V<sub>GS</sub> = ±20 V absolute maximum; logic-level drive from 3.3 V is safe but 12 V gate drive on a logic-level part is unnecessary and may stress the gate oxide over time. Verify that V<sub>GS</sub> stays below 20 V during transient ringing. In half-bridge configurations, ensure dead-time insertion (typically 100-500 ns) to prevent shoot-through. Confirm the drain pad is fully soldered to the PCB thermal copper - a dry solder joint at the drain pad destroys thermal dissipation and leads to thermal runaway.
Informations de conformité
AEC-Q101 (automotive) qualified per Infineon product page; RoHS compliant (Green Product); MSL1 to 260°C peak reflow; halogen-free status not explicitly confirmed in provided data.
