BSG0813NDIATMA1 vs BSZ0901NSIATMA1 Comparaison
Comparaison détaillée côte à côte de BSG0813NDIATMA1 par Infineon et BSZ0901NSIATMA1 par Infineon. Comparez les spécifications clés, les paramètres électriques, le conditionnement, le statut de cycle de vie, les prix et la disponibilité pour déterminer le meilleur composant pour vos exigences de conception.
Comparaison des spécifications
| Paramètre | BSG0813NDIATMA1 | BSZ0901NSIATMA1 |
|---|---|---|
| Marque | Infineon | Infineon |
| Catégorie | MOSFETs | MOSFETs |
| Statut du cycle de vie | Actif | Actif |
| Statut du stock | In Stock | In Stock |
| Prix unitaire (USD) | $1,05 | $0,34 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | OptiMOS 5 Power Block | OptiMOS 25V |
| FET Type | N-Channel MOSFET Array (half-bridge / synchronous buck) | N-Channel |
| Configuration | High-side + Low-side, integrated | — |
| Drain-Source Voltage (VDS) | 25 V | 30 V |
| Low-Side Continuous Drain Current (ID) | 19 A | — |
| High-Side Continuous Drain Current (ID) | 33 A | — |
| Power Dissipation (PD) | 2.5 W | — |
| Boîtier | PG-TISON-8 (5.0 x 6.0 mm) | PG-TSDSON-8-FL (TSDSON EP, 3.3 mm x 3.3 mm) |
| Type de montage | Surface Mount | Surface Mount |
| Plage de température de fonctionnement | [DATA_NEEDED: operating temperature range] | -55 C to +150 C (typical MOSFET range) |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) value] | [DATA_NEEDED: gate threshold voltage] |
| RDS(on) - Low-Side | [DATA_NEEDED: RDS(on) low-side @ VGS] | — |
| RDS(on) - High-Side | [DATA_NEEDED: RDS(on) high-side @ VGS] | — |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg total] | [DATA_NEEDED: total gate charge Qg] |
| Technology Generation | OptiMOS 5 | — |
| Statut RoHS | Compliant | Compliant |
| Niveau MSL | 1 (per JEDEC J-STD-020) | — |
| Topologie | Synchronous buck half-bridge | — |
| Part Number | — | BSZ0901NSIATMA1 |
| Technology | — | OptiMOS trench N-channel MOSFET |
| Continuous Drain Current (ID) at Ta=25C | — | 25 A |
| Continuous Drain Current (ID) at Tc=25C | — | 40 A |
| Power Dissipation (PD) at Ta=25C | — | 2.1 W |
| Power Dissipation (PD) at Tc=25C | — | 69 W |
| Nombre de broches | — | 8 |
| On-Resistance RDS(on) max @ VGS=10V | — | [DATA_NEEDED: RDS(on) max @ VGS=10V] |
| On-Resistance RDS(on) max @ VGS=4.5V | — | [DATA_NEEDED: RDS(on) max @ VGS=4.5V] |
| Packaging | — | Tape & Reel (ATMA1 suffix = 13-inch reel) |