BSG0813NDIATMA1 vs BSZ0901NSIATMA1 对比
详细并排对比 BSG0813NDIATMA1 出自 Infineon 和 BSZ0901NSIATMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | BSG0813NDIATMA1 | BSZ0901NSIATMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 分类 | MOSFETs | MOSFETs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $1.05 | $0.34 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | OptiMOS 5 Power Block | OptiMOS 25V |
| FET Type | N-Channel MOSFET Array (half-bridge / synchronous buck) | N-Channel |
| Configuration | High-side + Low-side, integrated | — |
| Drain-Source Voltage (VDS) | 25 V | 30 V |
| Low-Side Continuous Drain Current (ID) | 19 A | — |
| High-Side Continuous Drain Current (ID) | 33 A | — |
| Power Dissipation (PD) | 2.5 W | — |
| 封装 | PG-TISON-8 (5.0 x 6.0 mm) | PG-TSDSON-8-FL (TSDSON EP, 3.3 mm x 3.3 mm) |
| 安装类型 | Surface Mount | Surface Mount |
| 工作温度范围 | [DATA_NEEDED: operating temperature range] | -55 C to +150 C (typical MOSFET range) |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) value] | [DATA_NEEDED: gate threshold voltage] |
| RDS(on) - Low-Side | [DATA_NEEDED: RDS(on) low-side @ VGS] | — |
| RDS(on) - High-Side | [DATA_NEEDED: RDS(on) high-side @ VGS] | — |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg total] | [DATA_NEEDED: total gate charge Qg] |
| Technology Generation | OptiMOS 5 | — |
| RoHS 状态 | Compliant | Compliant |
| MSL 等级 | 1 (per JEDEC J-STD-020) | — |
| 拓扑 | Synchronous buck half-bridge | — |
| Part Number | — | BSZ0901NSIATMA1 |
| Technology | — | OptiMOS trench N-channel MOSFET |
| Continuous Drain Current (ID) at Ta=25C | — | 25 A |
| Continuous Drain Current (ID) at Tc=25C | — | 40 A |
| Power Dissipation (PD) at Ta=25C | — | 2.1 W |
| Power Dissipation (PD) at Tc=25C | — | 69 W |
| 引脚数量 | — | 8 |
| On-Resistance RDS(on) max @ VGS=10V | — | [DATA_NEEDED: RDS(on) max @ VGS=10V] |
| On-Resistance RDS(on) max @ VGS=4.5V | — | [DATA_NEEDED: RDS(on) max @ VGS=4.5V] |
| Packaging | — | Tape & Reel (ATMA1 suffix = 13-inch reel) |