BSG0813NDIATMA1 vs BSZ0901NSIATMA1 비교

다음의 상세 나란히 비교: BSG0813NDIATMA1 제조: Infineon 및 BSZ0901NSIATMA1 제조: Infineon. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.

사양 비교

파라미터 BSG0813NDIATMA1 BSZ0901NSIATMA1
브랜드 Infineon Infineon
카테고리 MOSFETs MOSFETs
수명 주기 상태 활성 활성
재고 상태 In Stock In Stock
단가 (USD) $1.05 $0.34
Manufacturer Infineon Technologies Infineon Technologies
Series OptiMOS 5 Power Block OptiMOS 25V
FET Type N-Channel MOSFET Array (half-bridge / synchronous buck) N-Channel
Configuration High-side + Low-side, integrated —
Drain-Source Voltage (VDS) 25 V 30 V
Low-Side Continuous Drain Current (ID) 19 A —
High-Side Continuous Drain Current (ID) 33 A —
Power Dissipation (PD) 2.5 W —
패키지 PG-TISON-8 (5.0 x 6.0 mm) PG-TSDSON-8-FL (TSDSON EP, 3.3 mm x 3.3 mm)
실장 유형 Surface Mount Surface Mount
동작 온도 범위 [DATA_NEEDED: operating temperature range] -55 C to +150 C (typical MOSFET range)
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) value] [DATA_NEEDED: gate threshold voltage]
RDS(on) - Low-Side [DATA_NEEDED: RDS(on) low-side @ VGS] —
RDS(on) - High-Side [DATA_NEEDED: RDS(on) high-side @ VGS] —
Total Gate Charge (Qg) [DATA_NEEDED: Qg total] [DATA_NEEDED: total gate charge Qg]
Technology Generation OptiMOS 5 —
RoHS 상태 Compliant Compliant
MSL 레벨 1 (per JEDEC J-STD-020) —
토폴로지 Synchronous buck half-bridge —
Part Number — BSZ0901NSIATMA1
Technology — OptiMOS trench N-channel MOSFET
Continuous Drain Current (ID) at Ta=25C — 25 A
Continuous Drain Current (ID) at Tc=25C — 40 A
Power Dissipation (PD) at Ta=25C — 2.1 W
Power Dissipation (PD) at Tc=25C — 69 W
핀 수 — 8
On-Resistance RDS(on) max @ VGS=10V — [DATA_NEEDED: RDS(on) max @ VGS=10V]
On-Resistance RDS(on) max @ VGS=4.5V — [DATA_NEEDED: RDS(on) max @ VGS=4.5V]
Packaging — Tape & Reel (ATMA1 suffix = 13-inch reel)

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