BTH62004ESAXUMA1 vs BTM9011EPXUMA1 Comparaison
Comparaison détaillée côte à côte de BTH62004ESAXUMA1 par Infineon et BTM9011EPXUMA1 par Infineon. Comparez les spécifications clés, les paramètres électriques, le conditionnement, le statut de cycle de vie, les prix et la disponibilité pour déterminer le meilleur composant pour vos exigences de conception.
Infineon
BTH62004ESAXUMA1 - 4-Ch 200mΩ 48V Smart High-Side Switch | Infineon
BTH62004ESAXUMA1 ✓ ActifComparaison des spécifications
| Paramètre | BTH62004ESAXUMA1 | BTM9011EPXUMA1 |
|---|---|---|
| Marque | Infineon | Infineon |
| Catégorie | Power MOSFET Drivers | Motor Drivers |
| Statut du cycle de vie | Actif | Actif |
| Statut du stock | In Stock | In Stock |
| Prix unitaire (USD) | $2,18 | $1,62 |
| Product Type | Smart High-Side Power Switch | — |
| Family | PROFET+ 48V | — |
| Number of Channels | 4 | — |
| Topologie | 4 x High-Side (1:1) | Full-bridge (H-bridge) with integrated power MOSFETs |
| On-State Resistance (RDS(on)) | 200 mΩ typical per channel | — |
| Nominal Load Current per Channel | 1 A | — |
| Supply Voltage Range | Up to 54 V | — |
| Load-Dump Tolerance | 60 V (transient, per datasheet) | — |
| Power Transistor Technology | N-channel vertical power MOSFET with charge pump | — |
| Current Sense Diagnosis | Yes (analog IS pin) | — |
| Protection Features | Over-temperature, over-voltage, short-circuit, reverse battery | — |
| Plage de température de fonctionnement | -40 °C to +150 °C junction | — |
| Boîtier | PG-TSDSO-24-21 (exposed pad) | PG-TSDSO-14 with exposed pad |
| Type de montage | Surface Mount | Surface Mount |
| Automotive Qualification | AEC-Q100 qualified | AEC-Q100 |
| Output Current Limit | — | 10 A (typ) |
| Path Resistance (per HS+LS) | — | 175 mΩ typical at 25 °C |
| Pulse Current (tpulse ≤ 1 s at 85 °C) | — | 5.2 A |
| Pulse Current (tpulse ≤ 10 s at 85 °C) | — | 4.2 A |
| Supply Voltage Range (normal) | — | 7 V to 18 V |
| Supply Voltage Range (extended) | — | 4.5 V to 40 V |
| PWM Frequency | — | up to 20 kHz |
| Interface | — | SPI (status, configuration, diagnostics) |
| Current Limitation | — | Min, integrated |
| Technology | — | BCD (Bipolar-CMOS-DMOS) monolithic |
| Operating Temperature (junction) | — | -40 °C to +150 °C |