BTH62004ESAXUMA1 vs BTM9011EPXUMA1 Comparison

Detailed side-by-side comparison of BTH62004ESAXUMA1 by Infineon and BTM9011EPXUMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Specification Comparison

Parameter BTH62004ESAXUMA1 BTM9011EPXUMA1
Brand Infineon Infineon
Category Power MOSFET Drivers Motor Drivers
Lifecycle Status Active Active
Product Type Smart High-Side Power Switch —
Family PROFET+ 48V —
Number of Channels 4 —
Topology 4 x High-Side (1:1) Full-bridge (H-bridge) with integrated power MOSFETs
On-State Resistance (RDS(on)) 200 mΩ typical per channel —
Nominal Load Current per Channel 1 A —
Supply Voltage Range Up to 54 V —
Load-Dump Tolerance 60 V (transient, per datasheet) —
Power Transistor Technology N-channel vertical power MOSFET with charge pump —
Current Sense Diagnosis Yes (analog IS pin) —
Protection Features Over-temperature, over-voltage, short-circuit, reverse battery —
Operating Temperature Range -40 °C to +150 °C junction —
Package PG-TSDSO-24-21 (exposed pad) PG-TSDSO-14 with exposed pad
Mounting Type Surface Mount Surface Mount
Automotive Qualification AEC-Q100 qualified AEC-Q100
Output Current Limit — 10 A (typ)
Path Resistance (per HS+LS) — 175 mΩ typical at 25 °C
Pulse Current (tpulse ≤ 1 s at 85 °C) — 5.2 A
Pulse Current (tpulse ≤ 10 s at 85 °C) — 4.2 A
Supply Voltage Range (normal) — 7 V to 18 V
Supply Voltage Range (extended) — 4.5 V to 40 V
PWM Frequency — up to 20 kHz
Interface — SPI (status, configuration, diagnostics)
Current Limitation — Min, integrated
Technology — BCD (Bipolar-CMOS-DMOS) monolithic
Operating Temperature (junction) — -40 °C to +150 °C

Datasheets & Resources

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