BTH62004ESAXUMA1 vs BTM9011EPXUMA1 비교

다음의 상세 나란히 비교: BTH62004ESAXUMA1 제조: Infineon 및 BTM9011EPXUMA1 제조: Infineon. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.

사양 비교

파라미터 BTH62004ESAXUMA1 BTM9011EPXUMA1
브랜드 Infineon Infineon
카테고리 Power MOSFET Drivers Motor Drivers
수명 주기 상태 활성 활성
재고 상태 In Stock In Stock
단가 (USD) $2.18 $1.62
Product Type Smart High-Side Power Switch —
Family PROFET+ 48V —
Number of Channels 4 —
토폴로지 4 x High-Side (1:1) Full-bridge (H-bridge) with integrated power MOSFETs
On-State Resistance (RDS(on)) 200 mΩ typical per channel —
Nominal Load Current per Channel 1 A —
Supply Voltage Range Up to 54 V —
Load-Dump Tolerance 60 V (transient, per datasheet) —
Power Transistor Technology N-channel vertical power MOSFET with charge pump —
Current Sense Diagnosis Yes (analog IS pin) —
Protection Features Over-temperature, over-voltage, short-circuit, reverse battery —
동작 온도 범위 -40 °C to +150 °C junction —
패키지 PG-TSDSO-24-21 (exposed pad) PG-TSDSO-14 with exposed pad
실장 유형 Surface Mount Surface Mount
Automotive Qualification AEC-Q100 qualified AEC-Q100
Output Current Limit — 10 A (typ)
Path Resistance (per HS+LS) — 175 mΩ typical at 25 °C
Pulse Current (tpulse ≤ 1 s at 85 °C) — 5.2 A
Pulse Current (tpulse ≤ 10 s at 85 °C) — 4.2 A
Supply Voltage Range (normal) — 7 V to 18 V
Supply Voltage Range (extended) — 4.5 V to 40 V
PWM Frequency — up to 20 kHz
인터페이스 — SPI (status, configuration, diagnostics)
Current Limitation — Min, integrated
Technology — BCD (Bipolar-CMOS-DMOS) monolithic
Operating Temperature (junction) — -40 °C to +150 °C

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