BTH62004ESAXUMA1 vs BTM9011EPXUMA1 Сравнение
Подробное сравнение бок о бок BTH62004ESAXUMA1 от Infineon и BTM9011EPXUMA1 от Infineon. Сравните ключевые характеристики, электрические параметры, упаковку, статус жизненного цикла, цены и наличие, чтобы выбрать лучший компонент для ваших требований.
Infineon
BTH62004ESAXUMA1 - 4-Ch 200mΩ 48V Smart High-Side Switch | Infineon
BTH62004ESAXUMA1 ✓ АктивенСравнение характеристик
| Параметр | BTH62004ESAXUMA1 | BTM9011EPXUMA1 |
|---|---|---|
| Бренд | Infineon | Infineon |
| Категория | Power MOSFET Drivers | Motor Drivers |
| Статус жизненного цикла | Активен | Активен |
| Наличие | In Stock | In Stock |
| Цена за единицу (USD) | $2,18 | $1,62 |
| Product Type | Smart High-Side Power Switch | — |
| Family | PROFET+ 48V | — |
| Number of Channels | 4 | — |
| Топология | 4 x High-Side (1:1) | Full-bridge (H-bridge) with integrated power MOSFETs |
| On-State Resistance (RDS(on)) | 200 mΩ typical per channel | — |
| Nominal Load Current per Channel | 1 A | — |
| Supply Voltage Range | Up to 54 V | — |
| Load-Dump Tolerance | 60 V (transient, per datasheet) | — |
| Power Transistor Technology | N-channel vertical power MOSFET with charge pump | — |
| Current Sense Diagnosis | Yes (analog IS pin) | — |
| Protection Features | Over-temperature, over-voltage, short-circuit, reverse battery | — |
| Диапазон рабочих температур | -40 °C to +150 °C junction | — |
| Корпус | PG-TSDSO-24-21 (exposed pad) | PG-TSDSO-14 with exposed pad |
| Тип монтажа | Surface Mount | Surface Mount |
| Automotive Qualification | AEC-Q100 qualified | AEC-Q100 |
| Output Current Limit | — | 10 A (typ) |
| Path Resistance (per HS+LS) | — | 175 mΩ typical at 25 °C |
| Pulse Current (tpulse ≤ 1 s at 85 °C) | — | 5.2 A |
| Pulse Current (tpulse ≤ 10 s at 85 °C) | — | 4.2 A |
| Supply Voltage Range (normal) | — | 7 V to 18 V |
| Supply Voltage Range (extended) | — | 4.5 V to 40 V |
| PWM Frequency | — | up to 20 kHz |
| Интерфейс | — | SPI (status, configuration, diagnostics) |
| Current Limitation | — | Min, integrated |
| Technology | — | BCD (Bipolar-CMOS-DMOS) monolithic |
| Operating Temperature (junction) | — | -40 °C to +150 °C |