EP1SGX25DF800C6N vs EP1SGX40GF800C7N Comparaison
Comparaison détaillée côte à côte de EP1SGX25DF800C6N par Intel et EP1SGX40GF800C7N par Intel. Comparez les spécifications clés, les paramètres électriques, le conditionnement, le statut de cycle de vie, les prix et la disponibilité pour déterminer le meilleur composant pour vos exigences de conception.
Intel
EP1SGX25DF800C6N - Stratix GX FPGA, 25K LE, 3.1875 Gbps SERDES | Intel / Altera
EP1SGX25DF800C6N ObsoleteIntel
EP1SGX40GF800C7N - Stratix GX FPGA, 41.25K LE, 800-BGA | Intel / Altera
EP1SGX40GF800C7N ObsoleteComparaison des spécifications
| Paramètre | EP1SGX25DF800C6N | EP1SGX40GF800C7N |
|---|---|---|
| Marque | Intel | Intel |
| Catégorie | FPGA & CPLD | FPGA & CPLD |
| Statut du cycle de vie | Obsolete | Obsolete |
| Statut du stock | In Stock | In Stock |
| Prix unitaire (USD) | $118,00 | $110,00 |
| Family | Stratix GX | Stratix GX |
| Logic Elements | 25,560 LEs | 41,250 |
| Maximum Transceiver Channels | 20 channels | — |
| Maximum Transceiver Data Rate | 3.1875 Gbps | — |
| Boîtier | FBGA-780 (FineLine BGA, 800-ball per JEDEC ordering code) | 800-ball FineLine BGA (FBGA-800) |
| Process Node | [DATA_NEEDED: process node] | — |
| Core Voltage | 1.5 V | 1.5 V |
| Température de fonctionnement | Commercial (0 C to +85 C) | — |
| Speed Grade | 6 | 7 (commercial, fastest) |
| Configuration Method | Passive Serial / Passive Parallel / Active Serial / JTAG | — |
| Transceiver Encoding | 8B/10B | — |
| Clock Data Recovery (CDR) | Yes, integrated per channel | — |
| Type de mémoire | TriMatrix embedded SRAM | — |
| DSP Blocks | Yes, embedded multiplier blocks | 624 |
| Type de montage | Surface Mount (BGA) | Surface Mount (BGA) |
| Statut RoHS | [DATA_NEEDED: RoHS status] | — |
| Lead Free | [DATA_NEEDED: lead free status] | — |
| Embedded Memory Bits | — | 3,423,744 bits |
| Multi-Gigabit Transceivers | — | 20 channels, up to 3.1875 Gbps |
| PLLs | — | 4 |
| Maximum User I/O Pins | — | [DATA_NEEDED: max user I/O count] |
| Process Technology | — | 130 nm CMOS |
| I/O Voltage | — | 1.5 V / 1.8 V / 2.5 V / 3.3 V (LVTTL/LVCMOS/LVDS) |
| Température de jonction en fonctionnement | — | 0C to +85C |
| Configuration Mode | — | Passive Serial / Fast Passive Parallel / Passive Parallel Asynchronous / JTAG |
| Memory Interfaces Supported | — | DDR, DDR2, QDR, RLDRAM |