IAUC100N10S5N040ATMA1 vs IAUC100N10S5L040ATMA1 Comparaison
Comparaison détaillée côte à côte de IAUC100N10S5N040ATMA1 par Infineon et IAUC100N10S5L040ATMA1 par Infineon. Comparez les spécifications clés, les paramètres électriques, le conditionnement, le statut de cycle de vie, les prix et la disponibilité pour déterminer le meilleur composant pour vos exigences de conception.
Infineon
IAUC100N10S5N040ATMA1 - 100V 4mΩ 100A OptiMOS-5 N-MOSFET | Infineon
IAUC100N10S5N040ATMA1 ✓ ActifInfineon
IAUC100N10S5L040ATMA1 - 100V 4mΩ 100A N-Channel MOSFET | Infineon
IAUC100N10S5L040ATMA1 ✓ ActifComparaison des spécifications
| Paramètre | IAUC100N10S5N040ATMA1 | IAUC100N10S5L040ATMA1 |
|---|---|---|
| Marque | Infineon | Infineon |
| Catégorie | MOSFETs | MOSFETs |
| Statut du cycle de vie | Actif | Actif |
| Statut du stock | In Stock | In Stock |
| Prix unitaire (USD) | $1,62 | $1,94 |
| FET Type | N-Channel, Enhancement Mode | — |
| Technology | OptiMOS-5 | — |
| Drain-Source Voltage (VDS) | 100 V | 100 V |
| Continuous Drain Current (ID) @ TC=25C | 100 A (package-limited) | — |
| Pulsed Drain Current (IDM) | 400 A | 400 A |
| RDS(on) max @ VGS=10V | 4 mΩ | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical value] | — |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg value] | — |
| Maximum Power Dissipation (PD) | 167 W @ TC=25C | — |
| Thermal Resistance, Junction-to-Case (RthJC) | 0.9 K/W | — |
| Plage de température de fonctionnement | -55C to +175C (junction) | -55 C to +175 C (junction) |
| Boîtier | PG-TDSON-8-34 (TDSON-8, 5x6 mm) Surface Mount | PG-TDSON-8-34 (SuperSO8 5x6 mm) |
| Type de montage | Surface Mount | Surface Mount |
| Niveau MSL | MSL1 (up to 260C peak reflow) | — |
| Automotive Qualification | AEC-Q100 qualified | AEC-Q101 qualified |
| Avalanche Rating | 100% Avalanche tested | — |
| AOI Compatibility | Feasible for Automatic Optical Inspection | Feasible for automatic optical inspection |
| Statut RoHS | Compliant | — |
| Manufacturer | — | Infineon Technologies |
| Part Family | — | OptiMOST 5 Power-Transistor (IAUC) |
| Type de transistor | — | N-Channel Enhancement Mode MOSFET |
| Continuous Drain Current (ID) at Tc | — | 100 A |
| On-State Resistance RDS(on) max | — | 4 mOhm |
| Gate Threshold Voltage VGS(th) | — | Logic Level |
| Continuous Power Dissipation (Tc) | — | 167 W |
| MSL Moisture Sensitivity | — | MSL1 (up to 260 C peak reflow) |
| Avalanche Tested | — | 100% production avalanche tested |