IAUC100N10S5N040ATMA1 vs IAUC100N10S5L040ATMA1 对比

详细并排对比 IAUC100N10S5N040ATMA1 出自 Infineon 和 IAUC100N10S5L040ATMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Infineon
IAUC100N10S5N040ATMA1 IAUC100N10S5N040ATMA1 - 100V 4mΩ 100A OptiMOS-5 N-MOSFET | Infineon

IAUC100N10S5N040ATMA1 - 100V 4mΩ 100A OptiMOS-5 N-MOSFET | Infineon

IAUC100N10S5N040ATMA1 ✓ 量产中
Infineon
IAUC100N10S5L040ATMA1 IAUC100N10S5L040ATMA1 - 100V 4mΩ 100A N-Channel MOSFET | Infineon

IAUC100N10S5L040ATMA1 - 100V 4mΩ 100A N-Channel MOSFET | Infineon

IAUC100N10S5L040ATMA1 ✓ 量产中

规格对比

参数 IAUC100N10S5N040ATMA1 IAUC100N10S5L040ATMA1
品牌 Infineon Infineon
分类 MOSFETs MOSFETs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $1.62 $1.94
FET Type N-Channel, Enhancement Mode —
Technology OptiMOS-5 —
Drain-Source Voltage (VDS) 100 V 100 V
Continuous Drain Current (ID) @ TC=25C 100 A (package-limited) —
Pulsed Drain Current (IDM) 400 A 400 A
RDS(on) max @ VGS=10V 4 mΩ —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typical value] —
Total Gate Charge (Qg) [DATA_NEEDED: Qg value] —
Maximum Power Dissipation (PD) 167 W @ TC=25C —
Thermal Resistance, Junction-to-Case (RthJC) 0.9 K/W —
工作温度范围 -55C to +175C (junction) -55 C to +175 C (junction)
封装 PG-TDSON-8-34 (TDSON-8, 5x6 mm) Surface Mount PG-TDSON-8-34 (SuperSO8 5x6 mm)
安装类型 Surface Mount Surface Mount
MSL 等级 MSL1 (up to 260C peak reflow) —
Automotive Qualification AEC-Q100 qualified AEC-Q101 qualified
Avalanche Rating 100% Avalanche tested —
AOI Compatibility Feasible for Automatic Optical Inspection Feasible for automatic optical inspection
RoHS 状态 Compliant —
Manufacturer — Infineon Technologies
Part Family — OptiMOST 5 Power-Transistor (IAUC)
晶体管类型 — N-Channel Enhancement Mode MOSFET
Continuous Drain Current (ID) at Tc — 100 A
On-State Resistance RDS(on) max — 4 mOhm
Gate Threshold Voltage VGS(th) — Logic Level
Continuous Power Dissipation (Tc) — 167 W
MSL Moisture Sensitivity — MSL1 (up to 260 C peak reflow)
Avalanche Tested — 100% production avalanche tested

数据手册与资源

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