IAUC100N10S5N040ATMA1 vs IAUC100N10S5L040ATMA1 비교

다음의 상세 나란히 비교: IAUC100N10S5N040ATMA1 제조: Infineon 및 IAUC100N10S5L040ATMA1 제조: Infineon. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.

Infineon
IAUC100N10S5L040ATMA1 IAUC100N10S5L040ATMA1 - 100V 4mΩ 100A N-Channel MOSFET | Infineon

IAUC100N10S5L040ATMA1 - 100V 4mΩ 100A N-Channel MOSFET | Infineon

IAUC100N10S5L040ATMA1 ✓ 활성

사양 비교

파라미터 IAUC100N10S5N040ATMA1 IAUC100N10S5L040ATMA1
브랜드 Infineon Infineon
카테고리 MOSFETs MOSFETs
수명 주기 상태 활성 활성
재고 상태 In Stock In Stock
단가 (USD) $1.62 $1.94
FET Type N-Channel, Enhancement Mode —
Technology OptiMOS-5 —
Drain-Source Voltage (VDS) 100 V 100 V
Continuous Drain Current (ID) @ TC=25C 100 A (package-limited) —
Pulsed Drain Current (IDM) 400 A 400 A
RDS(on) max @ VGS=10V 4 mΩ —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typical value] —
Total Gate Charge (Qg) [DATA_NEEDED: Qg value] —
Maximum Power Dissipation (PD) 167 W @ TC=25C —
Thermal Resistance, Junction-to-Case (RthJC) 0.9 K/W —
동작 온도 범위 -55C to +175C (junction) -55 C to +175 C (junction)
패키지 PG-TDSON-8-34 (TDSON-8, 5x6 mm) Surface Mount PG-TDSON-8-34 (SuperSO8 5x6 mm)
실장 유형 Surface Mount Surface Mount
MSL 레벨 MSL1 (up to 260C peak reflow) —
Automotive Qualification AEC-Q100 qualified AEC-Q101 qualified
Avalanche Rating 100% Avalanche tested —
AOI Compatibility Feasible for Automatic Optical Inspection Feasible for automatic optical inspection
RoHS 상태 Compliant —
Manufacturer — Infineon Technologies
Part Family — OptiMOST 5 Power-Transistor (IAUC)
트랜지스터 유형 — N-Channel Enhancement Mode MOSFET
Continuous Drain Current (ID) at Tc — 100 A
On-State Resistance RDS(on) max — 4 mOhm
Gate Threshold Voltage VGS(th) — Logic Level
Continuous Power Dissipation (Tc) — 167 W
MSL Moisture Sensitivity — MSL1 (up to 260 C peak reflow)
Avalanche Tested — 100% production avalanche tested

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