IAUC100N10S5N040ATMA1 vs IAUC100N10S5L040ATMA1 Comparação
Comparação detalhada lado a lado de IAUC100N10S5N040ATMA1 por Infineon e IAUC100N10S5L040ATMA1 por Infineon. Compare especificações principais, parâmetros elétricos, encapsulamento, status do ciclo de vida, preços e disponibilidade para determinar o melhor componente para os requisitos do seu projeto.
Infineon
IAUC100N10S5N040ATMA1 - 100V 4mΩ 100A OptiMOS-5 N-MOSFET | Infineon
IAUC100N10S5N040ATMA1 ✓ AtivoInfineon
IAUC100N10S5L040ATMA1 - 100V 4mΩ 100A N-Channel MOSFET | Infineon
IAUC100N10S5L040ATMA1 ✓ AtivoComparação de especificações
| Parâmetro | IAUC100N10S5N040ATMA1 | IAUC100N10S5L040ATMA1 |
|---|---|---|
| Marca | Infineon | Infineon |
| Categoria | MOSFETs | MOSFETs |
| Status do ciclo de vida | Ativo | Ativo |
| Status do estoque | In Stock | In Stock |
| Preço unitário (USD) | $1,62 | $1,94 |
| FET Type | N-Channel, Enhancement Mode | — |
| Technology | OptiMOS-5 | — |
| Drain-Source Voltage (VDS) | 100 V | 100 V |
| Continuous Drain Current (ID) @ TC=25C | 100 A (package-limited) | — |
| Pulsed Drain Current (IDM) | 400 A | 400 A |
| RDS(on) max @ VGS=10V | 4 mΩ | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical value] | — |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg value] | — |
| Maximum Power Dissipation (PD) | 167 W @ TC=25C | — |
| Thermal Resistance, Junction-to-Case (RthJC) | 0.9 K/W | — |
| Faixa de temperatura de operação | -55C to +175C (junction) | -55 C to +175 C (junction) |
| Encapsulamento | PG-TDSON-8-34 (TDSON-8, 5x6 mm) Surface Mount | PG-TDSON-8-34 (SuperSO8 5x6 mm) |
| Tipo de montagem | Surface Mount | Surface Mount |
| Nível MSL | MSL1 (up to 260C peak reflow) | — |
| Automotive Qualification | AEC-Q100 qualified | AEC-Q101 qualified |
| Avalanche Rating | 100% Avalanche tested | — |
| AOI Compatibility | Feasible for Automatic Optical Inspection | Feasible for automatic optical inspection |
| Status RoHS | Compliant | — |
| Manufacturer | — | Infineon Technologies |
| Part Family | — | OptiMOST 5 Power-Transistor (IAUC) |
| Tipo de transistor | — | N-Channel Enhancement Mode MOSFET |
| Continuous Drain Current (ID) at Tc | — | 100 A |
| On-State Resistance RDS(on) max | — | 4 mOhm |
| Gate Threshold Voltage VGS(th) | — | Logic Level |
| Continuous Power Dissipation (Tc) | — | 167 W |
| MSL Moisture Sensitivity | — | MSL1 (up to 260 C peak reflow) |
| Avalanche Tested | — | 100% production avalanche tested |