IGB30N60H3ATMA1 - 600V 30A TRENCHSTOP IGBT3 | Infineon
Référence : IGB30N60H3ATMA1 ✓ Actif| Qté | Prix unitaire | Total |
|---|---|---|
| 1 | $2.85 | $2,85 |
| 10 | $2.55 | $25,50 |
| 100 | $2.18 | $218,00 |
| 500 | $1.85 | $925,00 |
| 1 000 | $1.62 | $1 620,00 |
IGB30N60H3ATMA1 Présentation
An IGBT (Insulated Gate Bipolar Transistor) is a three-terminal power semiconductor that combines the voltage-driven, low-conduction-loss gate of a MOSFET with the high-current, low-saturation-voltage capability of a bipolar transistor. In the broader power-semiconductor hierarchy, an IGBT sits between MOSFETs (used at lower voltages and higher switching frequencies) and thyristors (used at very high currents); it is the workhorse device for medium- to high-voltage switching converters, motor drives, and inductive heating inverters.
Key features of the IGB30N60H3ATMA1 include a collector-emitter breakdown voltage of 600 V, a continuous DC collector current rating of 60 A (pulsed), low saturation voltage VCE(sat) of approximately 1.95 V, and a nominal turn-off time of 262 ns. The trench field-stop structure produces a square reverse-biased safe operating area (RBSOA) and short-circuit ruggedness, while the low gate charge and intrinsic anti-parallel diode simplify half-bridge design.
Typical applications for the IGB30N60H3ATMA1 include uninterruptible power supplies (UPS), solar inverters, welding converters, induction heating, switch-mode power supplies (SMPS) with hard-switched topologies, and industrial motor drives. The D2PAK footprint is widely accepted by designers building high-density PFC and inverter stages that require both thermal performance and SMT assembly.
When designing with this device, ensure the gate-drive voltage swings between -15 V and +15 V (or at minimum 0 V to +15 V with a negative turn-off bias for hard-switching topologies). The exposed metal tab of the D2PAK must be soldered to a sufficient copper area to keep junction temperature within ratings; at full 60 A conduction the device dissipates well over 100 W and demands careful thermal management.
This page synthesizes distributor stock and pricing, same-family TRENCHSTOP drop-in alternatives, and practical design notes not found in the manufacturer datasheet alone, giving the engineer a single decision-ready reference.
Alternatives de remplacement direct pour IGB30N60H3ATMA1 — même boîtier, compatible broche à broche. Les références à boîtier différent nécessitant une retouche du PCB sont exclues.
Variantes de cette série
Modèles de la même série directement compatibles avec IGB30N60H3ATMA1 (même facteur de forme et même empreinte) — différant par Package, Mounting Type, Gate-Emitter Voltage (VGE), Maximum Power Dissipation (Ptot), Technology.
Outil de comparaison rapide — sélectionnez des références alternatives pour une comparaison côte à côte :
IGB15N60H3ATMA1
✅ Remplacement direct📋 Alternative de référence (hors catalogue)
IGW30N60H3FKSA1
✅ Remplacement direct ⚠️ Spécifications non vérifiées✓ En stock
$2.49 / unité
Voir la fiche technique →STGB30H60DFB
✅ Remplacement direct📋 Alternative de référence (hors catalogue)
IKD15N60RFATMA1
✅ Remplacement direct✓ En stock
$1.35 / unité
Voir la fiche technique →IGB30N60H3ATMA1 Valeurs maximales et caractéristiques électriques
| Manufacturer | Infineon Technologies |
| Product Family | TRENCHSTOP IGBT3 |
| Collector-Emitter Voltage (VCE) | 600 V |
| Continuous DC Collector Current (IC, TC=25C) | 60 A |
| Dissipation de puissance (Ptot) | 187 W |
| Gate-Emitter Voltage (VGE) | +/- 20 V |
| Tension de saturation collecteur-émetteur (Vce(sat)) | 1.95 V (typ, at IC=30 A, VGE=15 V) |
| Turn-Off Time (toff) | 262 ns (nominal) |
| Technology | Trench Field Stop |
| Configuration | Single IGBT |
| Boîtier | PG-TO263-3-2 (D2PAK) |
| Type de montage | Surface Mount |
| Température de jonction en fonctionnement | -40C to +175C |
| Storage Temperature | -55C to +150C |
| Terminal Form | Gull Wing |
| Nombre de broches | 3 (2 + Tab) |
| Statut RoHS | Compliant |
| Switching Behavior | MOSFET-like turn-off |
Configuration des broches de IGB30N60H3ATMA1
| Broche 1 | Gate (G) — MOSFET-style gate input; drive with +15 V on, -5 to -15 V off |
| Broche 2 | Collector (C) — Main current terminal; internally connected to the metal tab |
| Broche 3 | Emitter (E) — Source reference for gate drive and main current return |
| Broche Tab | Collector / Heatsink — Electrically tied to Pin 2 (Collector); solder to PCB copper for thermal dissipation |
Reverse Biased Zone de fonctionnement sûr (RBSOA)
Applications typiques
IGB30N60H3ATMA1 convient pour 6 applications: Uninterruptible Power Supply (UPS) Inverter, Solar Inverter Boost and H-Bridge Stages, Induction Heating Resonant Inverter, Industrial Motor Drive Inverter, Welding Converter Power Stage, Switch-Mode Power Supply (SMPS) PFC Stage.
Uninterruptible Power Supply (UPS) Inverter
The IGB30N60H3ATMA1 is well-suited for 1-5 kVA online UPS inverter stages operating from a 400 V rectified DC bus. Its 600 V collector-emitter breakdown provides substantial margin above the typical 325 V bus peak, while the 60 A continuous current rating supports inverter designs up to 5 kW. The trench field-stop structure delivers MOSFET-like turn-off behavior, which reduces dead-time cross-conduction losses in the 20-50 kHz switching range typical of modern UPS designs.
Recommandé
Solar Inverter Boost and H-Bridge Stages
Residential and small-commercial solar inverters use the IGB30N60H3ATMA1 in PFC boost and full-bridge inverter sections. Its 600 V breakdown handles the 400 V DC bus with adequate transient headroom, and the 60 A continuous current supports 5-10 kW designs. The 1.95 V VCE(sat) minimizes conduction losses during peak power point tracking, while the fast 262 ns turn-off time enables 16-32 kHz switching for compact magnetics in transformerless string inverter topologies.
Recommandé
Induction Heating Resonant Inverter
The IGB30N60H3ATMA1 is a strong choice for induction cooking and industrial induction heating inverters operating in the 20-100 kHz resonant switching range. Its trench field-stop structure provides low turn-off losses critical for zero-voltage switching (ZVS) resonant topologies. The 187 W power dissipation rating and D2PAK footprint with substantial copper heatsinking enable continuous 30-40 A operation in the resonant tank circuit, supporting cooking appliances and metal hardening equipment up to 5 kW.
Recommandé
Industrial Motor Drive Inverter
Three-phase industrial motor drives for fans, pumps, and small servo systems use the IGB30N60H3ATMA1 in 400 V class inverter stages. The 600 V rating handles the rectified 230/400 V AC bus with margin, and the 60 A continuous current supports 7.5-15 kW motor drives. The MOSFET-like turn-off behavior simplifies dead-time management, while the rugged RBSOA provides short-circuit protection during motor startup transients and load dump events.
Recommandé
Welding Converter Power Stage
Inverter-based welding machines use the IGB30N60H3ATMA1 in the primary H-bridge or full-bridge converter stage that feeds the high-frequency welding transformer. Its 60 A continuous current and 187 W dissipation support 200-400 A welding output designs. The fast switching and low VCE(sat) balance conduction and switching losses in the 20-100 kHz hard-switched primary, while the rugged short-circuit withstand capability handles the arc-strike transients inherent to MMA/TIG welding processes.
Recommandé
Switch-Mode Power Supply (SMPS) PFC Stage
Power factor correction (PFC) boost stages in 1-3 kW SMPS designs use the IGB30N60H3ATMA1 as the boost switch when the output voltage is 400 V class and current requirements exceed 15 A. Its low VCE(sat) reduces conduction losses in continuous conduction mode (CCM), while the trench field-stop technology provides fast turn-off for the hard-switched boost topology. The D2PAK footprint enables compact SMT construction with adequate copper area for thermal management.
Recommandé
Récapitulatif des produits recommandés
Données de référence d'ingénierie pour IGB30N60H3ATMA1 — comparaison, recommandations de conception et informations de conformité.
Guide de sélection
Comparaison avec les alternatives
| Paramètre | Ce produit | IGB15N60H3ATMA1 | IGW30N60H3 | STGB30H60DFB | IKD15N60RFATMA1 |
|---|---|---|---|---|---|
| Brand | Infineon | Infineon | Infineon | STMicroelectronics | Infineon |
| Package | PG-TO263-3-2 (D2PAK) | PG-TO263-3-2 (D2PAK) - same | TO-247 (through-hole) | TO-263 (D2PAK) - same | PG-TO252-3 (DPAK) |
| Collector-Emitter Voltage (VCE) | 600 V | 600 V | 600 V | 600 V | 600 V |
| Continuous Collector Current (IC, TC=25C) | 60 A | 31 A | 60 A | 60 A | 30 A |
| Technology | TRENCHSTOP IGBT3 (Trench Field Stop) | TRENCHSTOP IGBT3 | TRENCHSTOP IGBT3 | HB2 Trench Field Stop | TRENCHSTOP IGBT3 |
| Mounting Type | Surface Mount | Surface Mount | Through-Hole | Surface Mount | Surface Mount |
Principaux différenciateurs
- Industry-leading TRENCHSTOP IGBT3 trench field-stop technology (vs STGB30H60DFB)
- Higher continuous current rating in same D2PAK footprint (vs IGB15N60H3ATMA1)
- Surface-mount D2PAK package optimized for automated assembly (vs IGW30N60H3)
Notes de conception
Estimated: At full 60 A conduction with VCE(sat)=1.95 V, conduction loss alone is approximately 117 W. With switching losses in a 20 kHz hard-switched PFC stage adding 10-20 W, total dissipation reaches 130-140 W. The PG-TO263-3-2 (D2PAK) package has a junction-to-ambient thermal resistance around 40 C/W on a 1 sq inch copper pour; a heatsink with thermal resistance below 0.5 C/W plus forced-air cooling is required for full-current operation. Always calculate junction temperature rise as Tj = Pd * (RthJC + RthCS + RthSA) + Tambient, and ensure Tj remains below 150C for reliable long-term operation.
The D2PAK exposed metal tab (Pin 2, Collector) must be soldered directly to a sufficient PCB copper pour to achieve the thermal dissipation ratings. Recommended minimum copper area is 1 sq inch on the top layer plus thermal vias to inner planes. Keep the gate-drive traces short (under 1 inch) and route them away from the high-current collector traces to minimize dv/dt induced gate-voltage spikes. Place the gate-driver IC as close as possible to the gate pin to minimize parasitic inductance in the gate loop.
Do not operate the IGB30N60H3ATMA1 with VGE below the gate-emitter threshold; if the gate is left floating during power-up, the IGBT may partially turn on and cause shoot-through in half-bridge configurations. Always use a proper gate-driver IC with defined logic inputs, and provide a pull-down resistor (10 kohm typical) on the gate pin to ensure a defined off-state during transient conditions. Exceeding VGE=+/-20 V absolute maximum can destroy the gate oxide; clamp the gate voltage with a 15 V Zener diode for protection.
The high dv/dt (typically 5-10 kV/us) of the IGB30N60H3ATMA1 during turn-off can induce voltage spikes on the gate due to parasitic miller capacitance (Cres). Use a negative gate-drive bias (-5 to -15 V) for hard-switched topologies to prevent parasitic turn-on, and add a small gate-source resistor (10-100 ohm) to dampen ringing. Snubber circuits (RCD or RCD-plus-diode) across the collector-emitter are often required in half-bridge configurations to limit voltage overshoot below the 600 V breakdown rating.
Informations de conformité
RoHS compliant per Infineon product page. Not AEC-Q100 qualified - this part is designed for industrial-grade applications, not automotive. Industrial operating junction temperature range is -40C to +175C.
