IPN60R360P7SATMA1 vs BSC019N04LSTATMA1 Comparaison
Comparaison détaillée côte à côte de IPN60R360P7SATMA1 par Infineon et BSC019N04LSTATMA1 par Infineon. Comparez les spécifications clés, les paramètres électriques, le conditionnement, le statut de cycle de vie, les prix et la disponibilité pour déterminer le meilleur composant pour vos exigences de conception.
Comparaison des spécifications
| Paramètre | IPN60R360P7SATMA1 | BSC019N04LSTATMA1 |
|---|---|---|
| Marque | Infineon | Infineon |
| Catégorie | MOSFETs | MOSFETs |
| Statut du cycle de vie | Actif | Actif |
| Statut du stock | In Stock | In Stock |
| Prix unitaire (USD) | $0,37 | $1,21 |
| Manufacturer | Infineon Technologies | — |
| Series | CoolMOS P7 | — |
| Technology | Superjunction (SJ) N-Channel MOSFET | OptiMOS 5 (N-channel trench MOSFET) |
| Drain-Source Voltage (VDS) | 600 V | 40 V |
| On-Resistance RDS(on) max | 360 mΩ | — |
| Continuous Drain Current (ID) at TC=25°C | 9 A | — |
| Continuous Drain Current (ID) at TA=25°C | [DATA_NEEDED: ID at TA=25°C with standard PCB] | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | [DATA_NEEDED: pulsed ID limit] |
| Power Dissipation (PD) at TC=25°C | 7 W | — |
| Gate-Source Voltage (VGS) | ±20 V (max) | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical/min/max] | — |
| Total Gate Charge (QG) | [DATA_NEEDED: QG typical at VGS=10V] | — |
| Plage de température de fonctionnement | -55°C to +150°C (TJ) | -55 C to +150 C |
| Boîtier | PG-SOT223 (Surface Mount) | TDSON-8 (SuperSO8) 5x6 mm |
| Type de montage | Surface Mount | Surface Mount |
| ESD Protection | Yes (integrated cell) | — |
| Sans halogène | Yes (per Infineon datasheet) | — |
| RoHS Compliance | Compliant | — |
| Nombre de broches | 3 functional + tab (PG-SOT223) | — |
| Body Diode | Integrated, fast-recovery | — |
| Continuous Drain Current (ID, Tc=25C) | — | 161 A |
| Continuous Drain Current (ID, Ta=25C) | — | 28 A |
| On-Resistance RDS(on) max @ VGS=10V | — | 1.9 mOhm |
| On-Resistance RDS(on) max @ VGS=4.5V | — | [DATA_NEEDED: RDS(on) at 4.5V] |
| Gate Threshold Voltage VGS(th) typ | — | 1.7 V |
| Total Gate Charge Qg typ | — | 85 nC |
| Power Dissipation PD (Tc=25C) | — | 94 W |
| Niveau MSL | — | 1 (unlimited) |
| Statut RoHS | — | Compliant |
| Lead-Free / Halogen-Free | — | Yes / Yes |
| Avalanche Rated | — | Yes |