IPN60R360P7SATMA1 vs BSC019N04LSTATMA1 比較
詳細な並列比較: IPN60R360P7SATMA1 メーカー: Infineon および BSC019N04LSTATMA1 メーカー: Infineon。主要仕様、電気的特性、パッケージ、ライフサイクルステータス、価格、在庫状況を比較して、設計要件に最適な部品を判断してください。
仕様比較
| パラメータ | IPN60R360P7SATMA1 | BSC019N04LSTATMA1 |
|---|---|---|
| ブランド | Infineon | Infineon |
| カテゴリ | MOSFETs | MOSFETs |
| ライフサイクル状態 | 有効 | 有効 |
| 在庫状況 | In Stock | In Stock |
| 単価（USD） | $0.37 | $1.21 |
| Manufacturer | Infineon Technologies | — |
| Series | CoolMOS P7 | — |
| Technology | Superjunction (SJ) N-Channel MOSFET | OptiMOS 5 (N-channel trench MOSFET) |
| Drain-Source Voltage (VDS) | 600 V | 40 V |
| On-Resistance RDS(on) max | 360 mΩ | — |
| Continuous Drain Current (ID) at TC=25°C | 9 A | — |
| Continuous Drain Current (ID) at TA=25°C | [DATA_NEEDED: ID at TA=25°C with standard PCB] | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | [DATA_NEEDED: pulsed ID limit] |
| Power Dissipation (PD) at TC=25°C | 7 W | — |
| Gate-Source Voltage (VGS) | ±20 V (max) | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical/min/max] | — |
| Total Gate Charge (QG) | [DATA_NEEDED: QG typical at VGS=10V] | — |
| 動作温度範囲 | -55°C to +150°C (TJ) | -55 C to +150 C |
| パッケージ | PG-SOT223 (Surface Mount) | TDSON-8 (SuperSO8) 5x6 mm |
| 実装タイプ | Surface Mount | Surface Mount |
| ESD Protection | Yes (integrated cell) | — |
| ハロゲンフリー | Yes (per Infineon datasheet) | — |
| RoHS Compliance | Compliant | — |
| ピン数 | 3 functional + tab (PG-SOT223) | — |
| Body Diode | Integrated, fast-recovery | — |
| Continuous Drain Current (ID, Tc=25C) | — | 161 A |
| Continuous Drain Current (ID, Ta=25C) | — | 28 A |
| On-Resistance RDS(on) max @ VGS=10V | — | 1.9 mOhm |
| On-Resistance RDS(on) max @ VGS=4.5V | — | [DATA_NEEDED: RDS(on) at 4.5V] |
| Gate Threshold Voltage VGS(th) typ | — | 1.7 V |
| Total Gate Charge Qg typ | — | 85 nC |
| Power Dissipation PD (Tc=25C) | — | 94 W |
| MSLレベル | — | 1 (unlimited) |
| RoHS ステータス | — | Compliant |
| Lead-Free / Halogen-Free | — | Yes / Yes |
| Avalanche Rated | — | Yes |