IQE036N08NM6ATMA1 vs IAUCN08S7L033ATMA1 Comparaison
Comparaison détaillée côte à côte de IQE036N08NM6ATMA1 par Infineon et IAUCN08S7L033ATMA1 par Infineon. Comparez les spécifications clés, les paramètres électriques, le conditionnement, le statut de cycle de vie, les prix et la disponibilité pour déterminer le meilleur composant pour vos exigences de conception.
Comparaison des spécifications
| Paramètre | IQE036N08NM6ATMA1 | IAUCN08S7L033ATMA1 |
|---|---|---|
| Marque | Infineon | Infineon |
| Catégorie | MOSFETs | MOSFETs |
| Statut du cycle de vie | Actif | Actif |
| Statut du stock | In Stock | In Stock |
| Prix unitaire (USD) | $0,92 | $0,86 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | OptiMOS 6 | — |
| FET Type | N-Channel | — |
| Drain-to-Source Voltage (VDS) | 80 V | — |
| Continuous Drain Current (ID) at Ta | 16.7 A | — |
| Continuous Drain Current (ID) at Tc | 118 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | — |
| On-Resistance RDS(on) max at VGS=10V | [DATA_NEEDED: RDS(on) at VGS=10V] | — |
| On-Resistance RDS(on) typical | 3.6 mΩ | — |
| Gate Threshold Voltage VGS(th) | [DATA_NEEDED: VGS(th) typical] | — |
| Power Dissipation at Ta | 2.5 W | — |
| Power Dissipation at Tc | 125 W | — |
| Boîtier | PG-TSON-8-5 (PQFN 3.3x3.3 Source-Down) | PG-TDSON-8-34 (SSO8, 5x6 mm²) |
| Type de montage | Surface Mount | Surface Mount |
| Plage de température de fonctionnement | -55°C to +150°C (junction, per datasheet) | -55°C to +175°C (TJ) |
| Statut RoHS | Compliant | Compliant |
| Niveau MSL | MSL1 (per JEDEC J-STD-020) | 1 (per JEDEC J-STD-020, typical for this package) |
| Avalanche Energy Rated | Yes (single-pulse, per datasheet) | — |
| Series | — | Automotive OptiMOS 7 |
| Type de transistor | — | N-Channel MOSFET |
| Drain-Source Voltage (VDS) | — | 80 V |
| Maximum On-Resistance (RDS(on)) at VGS=10V | — | 3.3 mΩ |
| Continuous Drain Current (ID) at Tj | — | 130 A |
| Continuous Drain Current (ID) at Tc=25°C | — | [DATA_NEEDED: ID at Tc=25C] |
| Power Dissipation (PD) at Tc=25°C | — | 118 W |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th) typical] |
| Gate-Source Voltage (VGS) max | — | ±20 V (typical Infineon OptiMOS 7 limit) |
| Qualification | — | Automotive Grade (per Infineon datasheet header) |
| Technology | — | OptiMOS 7 trench MOSFET |