IQE036N08NM6ATMA1 vs IAUCN08S7L033ATMA1 Comparação
Comparação detalhada lado a lado de IQE036N08NM6ATMA1 por Infineon e IAUCN08S7L033ATMA1 por Infineon. Compare especificações principais, parâmetros elétricos, encapsulamento, status do ciclo de vida, preços e disponibilidade para determinar o melhor componente para os requisitos do seu projeto.
Comparação de especificações
| Parâmetro | IQE036N08NM6ATMA1 | IAUCN08S7L033ATMA1 |
|---|---|---|
| Marca | Infineon | Infineon |
| Categoria | MOSFETs | MOSFETs |
| Status do ciclo de vida | Ativo | Ativo |
| Status do estoque | In Stock | In Stock |
| Preço unitário (USD) | $0,92 | $0,86 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | OptiMOS 6 | — |
| FET Type | N-Channel | — |
| Drain-to-Source Voltage (VDS) | 80 V | — |
| Continuous Drain Current (ID) at Ta | 16.7 A | — |
| Continuous Drain Current (ID) at Tc | 118 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | — |
| On-Resistance RDS(on) max at VGS=10V | [DATA_NEEDED: RDS(on) at VGS=10V] | — |
| On-Resistance RDS(on) typical | 3.6 mΩ | — |
| Gate Threshold Voltage VGS(th) | [DATA_NEEDED: VGS(th) typical] | — |
| Power Dissipation at Ta | 2.5 W | — |
| Power Dissipation at Tc | 125 W | — |
| Encapsulamento | PG-TSON-8-5 (PQFN 3.3x3.3 Source-Down) | PG-TDSON-8-34 (SSO8, 5x6 mm²) |
| Tipo de montagem | Surface Mount | Surface Mount |
| Faixa de temperatura de operação | -55°C to +150°C (junction, per datasheet) | -55°C to +175°C (TJ) |
| Status RoHS | Compliant | Compliant |
| Nível MSL | MSL1 (per JEDEC J-STD-020) | 1 (per JEDEC J-STD-020, typical for this package) |
| Avalanche Energy Rated | Yes (single-pulse, per datasheet) | — |
| Series | — | Automotive OptiMOS 7 |
| Tipo de transistor | — | N-Channel MOSFET |
| Drain-Source Voltage (VDS) | — | 80 V |
| Maximum On-Resistance (RDS(on)) at VGS=10V | — | 3.3 mΩ |
| Continuous Drain Current (ID) at Tj | — | 130 A |
| Continuous Drain Current (ID) at Tc=25°C | — | [DATA_NEEDED: ID at Tc=25C] |
| Power Dissipation (PD) at Tc=25°C | — | 118 W |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th) typical] |
| Gate-Source Voltage (VGS) max | — | ±20 V (typical Infineon OptiMOS 7 limit) |
| Qualification | — | Automotive Grade (per Infineon datasheet header) |
| Technology | — | OptiMOS 7 trench MOSFET |