IQE036N08NM6ATMA1 vs IAUCN08S7L033ATMA1 비교

다음의 상세 나란히 비교: IQE036N08NM6ATMA1 제조: Infineon 및 IAUCN08S7L033ATMA1 제조: Infineon. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.

Infineon
IAUCN08S7L033ATMA1 IAUCN08S7L033ATMA1 - 80V 3.3mΩ OptiMOS 7 N-MOSFET | Infineon

IAUCN08S7L033ATMA1 - 80V 3.3mΩ OptiMOS 7 N-MOSFET | Infineon

IAUCN08S7L033ATMA1 ✓ 활성

사양 비교

파라미터 IQE036N08NM6ATMA1 IAUCN08S7L033ATMA1
브랜드 Infineon Infineon
카테고리 MOSFETs MOSFETs
수명 주기 상태 활성 활성
재고 상태 In Stock In Stock
단가 (USD) $0.92 $0.86
Manufacturer Infineon Technologies Infineon Technologies
Product Family OptiMOS 6 —
FET Type N-Channel —
Drain-to-Source Voltage (VDS) 80 V —
Continuous Drain Current (ID) at Ta 16.7 A —
Continuous Drain Current (ID) at Tc 118 A —
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] —
On-Resistance RDS(on) max at VGS=10V [DATA_NEEDED: RDS(on) at VGS=10V] —
On-Resistance RDS(on) typical 3.6 mΩ —
Gate Threshold Voltage VGS(th) [DATA_NEEDED: VGS(th) typical] —
Power Dissipation at Ta 2.5 W —
Power Dissipation at Tc 125 W —
패키지 PG-TSON-8-5 (PQFN 3.3x3.3 Source-Down) PG-TDSON-8-34 (SSO8, 5x6 mm²)
실장 유형 Surface Mount Surface Mount
동작 온도 범위 -55°C to +150°C (junction, per datasheet) -55°C to +175°C (TJ)
RoHS 상태 Compliant Compliant
MSL 레벨 MSL1 (per JEDEC J-STD-020) 1 (per JEDEC J-STD-020, typical for this package)
Avalanche Energy Rated Yes (single-pulse, per datasheet) —
Series — Automotive OptiMOS 7
트랜지스터 유형 — N-Channel MOSFET
Drain-Source Voltage (VDS) — 80 V
Maximum On-Resistance (RDS(on)) at VGS=10V — 3.3 mΩ
Continuous Drain Current (ID) at Tj — 130 A
Continuous Drain Current (ID) at Tc=25°C — [DATA_NEEDED: ID at Tc=25C]
Power Dissipation (PD) at Tc=25°C — 118 W
Gate Threshold Voltage (VGS(th)) — [DATA_NEEDED: VGS(th) typical]
Gate-Source Voltage (VGS) max — ±20 V (typical Infineon OptiMOS 7 limit)
Qualification — Automotive Grade (per Infineon datasheet header)
Technology — OptiMOS 7 trench MOSFET

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