IQE036N08NM6ATMA1 vs IAUCN08S7L033ATMA1 Comparison
Detailed side-by-side comparison of IQE036N08NM6ATMA1 by Infineon and IAUCN08S7L033ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IQE036N08NM6ATMA1
IQE036N08NM6ATMA1 - 80V OptiMOS 6 N-MOSFET, 3.6mΞ© | Infineon
IQE036N08NM6ATMA1 β ActiveInfineon
IAUCN08S7L033ATMA1
IAUCN08S7L033ATMA1 - 80V 3.3mΞ© OptiMOS 7 N-MOSFET | Infineon
IAUCN08S7L033ATMA1 β ActiveSpecification Comparison
| Parameter | IQE036N08NM6ATMA1 | IAUCN08S7L033ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.92 | $0.86 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | OptiMOS 6 | β |
| FET Type | N-Channel | β |
| Drain-to-Source Voltage (VDS) | 80 V | β |
| Continuous Drain Current (ID) at Ta | 16.7 A | β |
| Continuous Drain Current (ID) at Tc | 118 A | β |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | β |
| On-Resistance RDS(on) max at VGS=10V | [DATA_NEEDED: RDS(on) at VGS=10V] | β |
| On-Resistance RDS(on) typical | 3.6 mΞ© | β |
| Gate Threshold Voltage VGS(th) | [DATA_NEEDED: VGS(th) typical] | β |
| Power Dissipation at Ta | 2.5 W | β |
| Power Dissipation at Tc | 125 W | β |
| Package | PG-TSON-8-5 (PQFN 3.3x3.3 Source-Down) | PG-TDSON-8-34 (SSO8, 5x6 mmΒ²) |
| Mounting Type | Surface Mount | Surface Mount |
| Operating Temperature Range | -55Β°C to +150Β°C (junction, per datasheet) | -55Β°C to +175Β°C (TJ) |
| RoHS Status | Compliant | Compliant |
| MSL Level | MSL1 (per JEDEC J-STD-020) | 1 (per JEDEC J-STD-020, typical for this package) |
| Avalanche Energy Rated | Yes (single-pulse, per datasheet) | β |
| Series | β | Automotive OptiMOS 7 |
| Transistor Type | β | N-Channel MOSFET |
| Drain-Source Voltage (VDS) | β | 80 V |
| Maximum On-Resistance (RDS(on)) at VGS=10V | β | 3.3 mΞ© |
| Continuous Drain Current (ID) at Tj | β | 130 A |
| Continuous Drain Current (ID) at Tc=25Β°C | β | [DATA_NEEDED: ID at Tc=25C] |
| Power Dissipation (PD) at Tc=25Β°C | β | 118 W |
| Gate Threshold Voltage (VGS(th)) | β | [DATA_NEEDED: VGS(th) typical] |
| Gate-Source Voltage (VGS) max | β | Β±20 V (typical Infineon OptiMOS 7 limit) |
| Qualification | β | Automotive Grade (per Infineon datasheet header) |
| Technology | β | OptiMOS 7 trench MOSFET |