IRF7319TRPBF vs IRFR9120NTRPBF Comparaison
Comparaison détaillée côte à côte de IRF7319TRPBF par Infineon et IRFR9120NTRPBF par Infineon. Comparez les spécifications clés, les paramètres électriques, le conditionnement, le statut de cycle de vie, les prix et la disponibilité pour déterminer le meilleur composant pour vos exigences de conception.
Comparaison des spécifications
| Paramètre | IRF7319TRPBF | IRFR9120NTRPBF |
|---|---|---|
| Marque | Infineon | Infineon |
| Catégorie | MOSFETs | MOSFETs |
| Statut du cycle de vie | Actif | Actif |
| Statut du stock | In Stock | In Stock |
| Prix unitaire (USD) | $0,62 | $0,32 |
| Manufacturer | Infineon Technologies (formerly International Rectifier) | — |
| Product Type | Dual MOSFET Array (N-channel + P-channel) | — |
| Technology | IR MOSFET / Fifth Generation HEXFET | HEXFET fifth-generation IR MOSFET |
| Drain-to-Source Voltage (VDS) | 30 V | — |
| Continuous Drain Current N-channel (ID) | 6.5 A | — |
| Continuous Drain Current P-channel (ID) | 4.9 A | — |
| RDS(on) Max N-channel | 29 mOhm (per Infineon product page) | — |
| RDS(on) Max P-channel | [DATA_NEEDED: P-channel RDS(on) max] | — |
| Total Power Dissipation (PD) | 2 W | — |
| Thermal Resistance Junction-to-Ambient N-ch | 120 C/W (steady state) | — |
| Thermal Resistance Junction-to-Ambient P-ch | 110 C/W (steady state) | — |
| Package Type | 8-SOIC (SO-8) | — |
| Type de montage | Surface Mount | Surface Mount |
| Plage de température de fonctionnement | -55C to +150C (junction) | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typ/min/max] | [DATA_NEEDED: gate threshold voltage] |
| Lead-Free / RoHS | Yes (PBF suffix = Pb-free) | — |
| Packaging | Tape & Reel (TR suffix) | — |
| Configuration | N-Channel + P-Channel (complementary half-bridge) | — |
| Polarity | — | P-Channel |
| Drain-Source Voltage (VDS) | — | -100 V |
| Continuous Drain Current (ID) at TC=25C | — | -6.6 A |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: pulsed drain current] |
| On-Resistance (RDS(on)) max at VGS=-10V | — | 480 milliohm |
| Gate-Source Voltage (VGS) max | — | +/-20 V |
| Total Gate Charge (Qg) | — | 18 nC (typical) |
| Continuous Power Dissipation (PD) at TC=25C | — | 40 W |
| Plage de température de jonction en fonctionnement | — | -55C to +175C |
| Thermal Resistance Junction-to-Case (RthJC) | — | [DATA_NEEDED: RthJC] |
| Boîtier | — | TO-252AA (DPAK), surface mount |
| Niveau MSL | — | 1 (unlimited floor life) |
| Lead Finish / Plating | — | Pb-free (PBF suffix), Matte Tin |
| Statut RoHS | — | Compliant |
| Moisture Sensitivity | — | MSL1 per JEDEC J-STD-020 |