IRF7319TRPBF vs IRFR9120NTRPBF Comparación
Comparación detallada lado a lado de IRF7319TRPBF por Infineon y IRFR9120NTRPBF por Infineon. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Comparación de especificaciones
| Parámetro | IRF7319TRPBF | IRFR9120NTRPBF |
|---|---|---|
| Marca | Infineon | Infineon |
| Categoría | MOSFETs | MOSFETs |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $0,62 | $0,32 |
| Manufacturer | Infineon Technologies (formerly International Rectifier) | — |
| Product Type | Dual MOSFET Array (N-channel + P-channel) | — |
| Technology | IR MOSFET / Fifth Generation HEXFET | HEXFET fifth-generation IR MOSFET |
| Drain-to-Source Voltage (VDS) | 30 V | — |
| Continuous Drain Current N-channel (ID) | 6.5 A | — |
| Continuous Drain Current P-channel (ID) | 4.9 A | — |
| RDS(on) Max N-channel | 29 mOhm (per Infineon product page) | — |
| RDS(on) Max P-channel | [DATA_NEEDED: P-channel RDS(on) max] | — |
| Total Power Dissipation (PD) | 2 W | — |
| Thermal Resistance Junction-to-Ambient N-ch | 120 C/W (steady state) | — |
| Thermal Resistance Junction-to-Ambient P-ch | 110 C/W (steady state) | — |
| Package Type | 8-SOIC (SO-8) | — |
| Tipo de montaje | Surface Mount | Surface Mount |
| Rango de temperatura de funcionamiento | -55C to +150C (junction) | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typ/min/max] | [DATA_NEEDED: gate threshold voltage] |
| Lead-Free / RoHS | Yes (PBF suffix = Pb-free) | — |
| Packaging | Tape & Reel (TR suffix) | — |
| Configuration | N-Channel + P-Channel (complementary half-bridge) | — |
| Polarity | — | P-Channel |
| Drain-Source Voltage (VDS) | — | -100 V |
| Continuous Drain Current (ID) at TC=25C | — | -6.6 A |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: pulsed drain current] |
| On-Resistance (RDS(on)) max at VGS=-10V | — | 480 milliohm |
| Gate-Source Voltage (VGS) max | — | +/-20 V |
| Total Gate Charge (Qg) | — | 18 nC (typical) |
| Continuous Power Dissipation (PD) at TC=25C | — | 40 W |
| Rango de temperatura de unión de funcionamiento | — | -55C to +175C |
| Thermal Resistance Junction-to-Case (RthJC) | — | [DATA_NEEDED: RthJC] |
| Encapsulado | — | TO-252AA (DPAK), surface mount |
| Nivel MSL | — | 1 (unlimited floor life) |
| Lead Finish / Plating | — | Pb-free (PBF suffix), Matte Tin |
| Estado RoHS | — | Compliant |
| Moisture Sensitivity | — | MSL1 per JEDEC J-STD-020 |