IRF7319TRPBF vs IRFR9120NTRPBF 비교

다음의 상세 나란히 비교: IRF7319TRPBF 제조: Infineon 및 IRFR9120NTRPBF 제조: Infineon. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.

사양 비교

파라미터 IRF7319TRPBF IRFR9120NTRPBF
브랜드 Infineon Infineon
카테고리 MOSFETs MOSFETs
수명 주기 상태 활성 활성
재고 상태 In Stock In Stock
단가 (USD) $0.62 $0.32
Manufacturer Infineon Technologies (formerly International Rectifier) —
Product Type Dual MOSFET Array (N-channel + P-channel) —
Technology IR MOSFET / Fifth Generation HEXFET HEXFET fifth-generation IR MOSFET
Drain-to-Source Voltage (VDS) 30 V —
Continuous Drain Current N-channel (ID) 6.5 A —
Continuous Drain Current P-channel (ID) 4.9 A —
RDS(on) Max N-channel 29 mOhm (per Infineon product page) —
RDS(on) Max P-channel [DATA_NEEDED: P-channel RDS(on) max] —
Total Power Dissipation (PD) 2 W —
Thermal Resistance Junction-to-Ambient N-ch 120 C/W (steady state) —
Thermal Resistance Junction-to-Ambient P-ch 110 C/W (steady state) —
Package Type 8-SOIC (SO-8) —
실장 유형 Surface Mount Surface Mount
동작 온도 범위 -55C to +150C (junction) —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typ/min/max] [DATA_NEEDED: gate threshold voltage]
Lead-Free / RoHS Yes (PBF suffix = Pb-free) —
Packaging Tape & Reel (TR suffix) —
Configuration N-Channel + P-Channel (complementary half-bridge) —
Polarity — P-Channel
Drain-Source Voltage (VDS) — -100 V
Continuous Drain Current (ID) at TC=25C — -6.6 A
Pulsed Drain Current (IDM) — [DATA_NEEDED: pulsed drain current]
On-Resistance (RDS(on)) max at VGS=-10V — 480 milliohm
Gate-Source Voltage (VGS) max — +/-20 V
Total Gate Charge (Qg) — 18 nC (typical)
Continuous Power Dissipation (PD) at TC=25C — 40 W
동작 접합 온도 범위 — -55C to +175C
Thermal Resistance Junction-to-Case (RthJC) — [DATA_NEEDED: RthJC]
패키지 — TO-252AA (DPAK), surface mount
MSL 레벨 — 1 (unlimited floor life)
Lead Finish / Plating — Pb-free (PBF suffix), Matte Tin
RoHS 상태 — Compliant
Moisture Sensitivity — MSL1 per JEDEC J-STD-020

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