IRF7319TRPBF vs IRFR9120NTRPBF 对比

详细并排对比 IRF7319TRPBF 出自 Infineon 和 IRFR9120NTRPBF 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

规格对比

参数 IRF7319TRPBF IRFR9120NTRPBF
品牌 Infineon Infineon
分类 MOSFETs MOSFETs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $0.62 $0.32
Manufacturer Infineon Technologies (formerly International Rectifier) —
Product Type Dual MOSFET Array (N-channel + P-channel) —
Technology IR MOSFET / Fifth Generation HEXFET HEXFET fifth-generation IR MOSFET
Drain-to-Source Voltage (VDS) 30 V —
Continuous Drain Current N-channel (ID) 6.5 A —
Continuous Drain Current P-channel (ID) 4.9 A —
RDS(on) Max N-channel 29 mOhm (per Infineon product page) —
RDS(on) Max P-channel [DATA_NEEDED: P-channel RDS(on) max] —
Total Power Dissipation (PD) 2 W —
Thermal Resistance Junction-to-Ambient N-ch 120 C/W (steady state) —
Thermal Resistance Junction-to-Ambient P-ch 110 C/W (steady state) —
Package Type 8-SOIC (SO-8) —
安装类型 Surface Mount Surface Mount
工作温度范围 -55C to +150C (junction) —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typ/min/max] [DATA_NEEDED: gate threshold voltage]
Lead-Free / RoHS Yes (PBF suffix = Pb-free) —
Packaging Tape & Reel (TR suffix) —
Configuration N-Channel + P-Channel (complementary half-bridge) —
Polarity — P-Channel
Drain-Source Voltage (VDS) — -100 V
Continuous Drain Current (ID) at TC=25C — -6.6 A
Pulsed Drain Current (IDM) — [DATA_NEEDED: pulsed drain current]
On-Resistance (RDS(on)) max at VGS=-10V — 480 milliohm
Gate-Source Voltage (VGS) max — +/-20 V
Total Gate Charge (Qg) — 18 nC (typical)
Continuous Power Dissipation (PD) at TC=25C — 40 W
工作结温范围 — -55C to +175C
Thermal Resistance Junction-to-Case (RthJC) — [DATA_NEEDED: RthJC]
封装 — TO-252AA (DPAK), surface mount
MSL 等级 — 1 (unlimited floor life)
Lead Finish / Plating — Pb-free (PBF suffix), Matte Tin
RoHS 状态 — Compliant
Moisture Sensitivity — MSL1 per JEDEC J-STD-020

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