IRLS3036TRLPBF vs IRFB3207ZPBF Comparaison
Comparaison détaillée côte à côte de IRLS3036TRLPBF par Infineon et IRFB3207ZPBF par Infineon. Comparez les spécifications clés, les paramètres électriques, le conditionnement, le statut de cycle de vie, les prix et la disponibilité pour déterminer le meilleur composant pour vos exigences de conception.
Comparaison des spécifications
| Paramètre | IRLS3036TRLPBF | IRFB3207ZPBF |
|---|---|---|
| Marque | Infineon | Infineon |
| Catégorie | MOSFETs | MOSFETs |
| Statut du cycle de vie | Actif | Actif |
| Statut du stock | In Stock | In Stock |
| Prix unitaire (USD) | $1,39 | $1,62 |
| Polarity | N-Channel | — |
| Technology | IR HEXFET (planar DMOS) | N-Channel MOSFET (HEXFET, Z-suffix ruggedized) |
| Drain-Source Voltage (Vdss) | 60 V | — |
| Continuous Drain Current (Id) at Tc=25C | 270 A | — |
| Continuous Drain Current (Id) at Tc=100C | 195 A | — |
| Pulsed Drain Current (Idm) | 1100 A | — |
| Rds(on) max @ Vgs=10V | 1.9 mOhm | — |
| Gate-Source Threshold Voltage (Vgs(th)) | Logic level (see datasheet for exact value) [DATA_NEEDED: Vgs(th) typical/min/max] | — |
| Total Gate Charge (Qg) typ | 91 nC | — |
| Gate-Source Voltage (Vgs) max | [DATA_NEEDED: Vgs max +/- V] | — |
| Power Dissipation (Pd) at Tc=25C | 380 W | — |
| Plage de température de fonctionnement | -55C to +175C | — |
| Boîtier | D2PAK (TO-263), surface mount | TO-220AB (3-lead through-hole) |
| Type de montage | Surface Mount | Through Hole |
| Niveau MSL | 1 | N/A (through-hole) |
| Statut RoHS | Compliant (PBF suffix) | — |
| Lead-Free | Yes (PBF suffix) | — |
| Integrated Body Diode | Yes (avalanche rated) | — |
| Manufacturer | — | Infineon Technologies (formerly International Rectifier) |
| Part Number | — | IRFB3207ZPBF |
| Series | — | HEXFET |
| Drain-Source Voltage (VDS) | — | 75 V |
| Continuous Drain Current (ID) at TC=25C | — | 120 A |
| Silicon-Limited Drain Current | — | 170 A |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: pulsed drain current value] |
| On-Resistance RDS(on) typ @ VGS=10V | — | 3.3 mOhm |
| On-Resistance RDS(on) max @ VGS=10V | — | 4.1 mOhm |
| Gate Threshold Voltage VGS(th) | — | [DATA_NEEDED: typical VGS(th)] |
| Total Gate Charge Qg | — | [DATA_NEEDED: total gate charge] |
| Power Dissition (PD) at TC=25C | — | 300 W |
| Température de jonction en fonctionnement | — | -55 C to +175 C |
| Lead-Free / RoHS | — | Yes (PBF suffix = lead-free) |
| Avalanche Rated | — | Yes (improved Z-variant ruggedness) |