IRLS3036TRLPBF vs IRFB3207ZPBF 비교

다음의 상세 나란히 비교: IRLS3036TRLPBF 제조: Infineon 및 IRFB3207ZPBF 제조: Infineon. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.

사양 비교

파라미터 IRLS3036TRLPBF IRFB3207ZPBF
브랜드 Infineon Infineon
카테고리 MOSFETs MOSFETs
수명 주기 상태 활성 활성
재고 상태 In Stock In Stock
단가 (USD) $1.39 $1.62
Polarity N-Channel —
Technology IR HEXFET (planar DMOS) N-Channel MOSFET (HEXFET, Z-suffix ruggedized)
Drain-Source Voltage (Vdss) 60 V —
Continuous Drain Current (Id) at Tc=25C 270 A —
Continuous Drain Current (Id) at Tc=100C 195 A —
Pulsed Drain Current (Idm) 1100 A —
Rds(on) max @ Vgs=10V 1.9 mOhm —
Gate-Source Threshold Voltage (Vgs(th)) Logic level (see datasheet for exact value) [DATA_NEEDED: Vgs(th) typical/min/max] —
Total Gate Charge (Qg) typ 91 nC —
Gate-Source Voltage (Vgs) max [DATA_NEEDED: Vgs max +/- V] —
Power Dissipation (Pd) at Tc=25C 380 W —
동작 온도 범위 -55C to +175C —
패키지 D2PAK (TO-263), surface mount TO-220AB (3-lead through-hole)
실장 유형 Surface Mount Through Hole
MSL 레벨 1 N/A (through-hole)
RoHS 상태 Compliant (PBF suffix) —
Lead-Free Yes (PBF suffix) —
Integrated Body Diode Yes (avalanche rated) —
Manufacturer — Infineon Technologies (formerly International Rectifier)
Part Number — IRFB3207ZPBF
Series — HEXFET
Drain-Source Voltage (VDS) — 75 V
Continuous Drain Current (ID) at TC=25C — 120 A
Silicon-Limited Drain Current — 170 A
Pulsed Drain Current (IDM) — [DATA_NEEDED: pulsed drain current value]
On-Resistance RDS(on) typ @ VGS=10V — 3.3 mOhm
On-Resistance RDS(on) max @ VGS=10V — 4.1 mOhm
Gate Threshold Voltage VGS(th) — [DATA_NEEDED: typical VGS(th)]
Total Gate Charge Qg — [DATA_NEEDED: total gate charge]
Power Dissition (PD) at TC=25C — 300 W
동작 접합 온도 — -55 C to +175 C
Lead-Free / RoHS — Yes (PBF suffix = lead-free)
Avalanche Rated — Yes (improved Z-variant ruggedness)

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