IRLS3036TRLPBF vs IRFB3207ZPBF Сравнение
Подробное сравнение бок о бок IRLS3036TRLPBF от Infineon и IRFB3207ZPBF от Infineon. Сравните ключевые характеристики, электрические параметры, упаковку, статус жизненного цикла, цены и наличие, чтобы выбрать лучший компонент для ваших требований.
Сравнение характеристик
| Параметр | IRLS3036TRLPBF | IRFB3207ZPBF |
|---|---|---|
| Бренд | Infineon | Infineon |
| Категория | MOSFETs | MOSFETs |
| Статус жизненного цикла | Активен | Активен |
| Наличие | In Stock | In Stock |
| Цена за единицу (USD) | $1,39 | $1,62 |
| Polarity | N-Channel | — |
| Technology | IR HEXFET (planar DMOS) | N-Channel MOSFET (HEXFET, Z-suffix ruggedized) |
| Drain-Source Voltage (Vdss) | 60 V | — |
| Continuous Drain Current (Id) at Tc=25C | 270 A | — |
| Continuous Drain Current (Id) at Tc=100C | 195 A | — |
| Pulsed Drain Current (Idm) | 1100 A | — |
| Rds(on) max @ Vgs=10V | 1.9 mOhm | — |
| Gate-Source Threshold Voltage (Vgs(th)) | Logic level (see datasheet for exact value) [DATA_NEEDED: Vgs(th) typical/min/max] | — |
| Total Gate Charge (Qg) typ | 91 nC | — |
| Gate-Source Voltage (Vgs) max | [DATA_NEEDED: Vgs max +/- V] | — |
| Power Dissipation (Pd) at Tc=25C | 380 W | — |
| Диапазон рабочих температур | -55C to +175C | — |
| Корпус | D2PAK (TO-263), surface mount | TO-220AB (3-lead through-hole) |
| Тип монтажа | Surface Mount | Through Hole |
| Уровень MSL | 1 | N/A (through-hole) |
| Статус RoHS | Compliant (PBF suffix) | — |
| Lead-Free | Yes (PBF suffix) | — |
| Integrated Body Diode | Yes (avalanche rated) | — |
| Manufacturer | — | Infineon Technologies (formerly International Rectifier) |
| Part Number | — | IRFB3207ZPBF |
| Series | — | HEXFET |
| Drain-Source Voltage (VDS) | — | 75 V |
| Continuous Drain Current (ID) at TC=25C | — | 120 A |
| Silicon-Limited Drain Current | — | 170 A |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: pulsed drain current value] |
| On-Resistance RDS(on) typ @ VGS=10V | — | 3.3 mOhm |
| On-Resistance RDS(on) max @ VGS=10V | — | 4.1 mOhm |
| Gate Threshold Voltage VGS(th) | — | [DATA_NEEDED: typical VGS(th)] |
| Total Gate Charge Qg | — | [DATA_NEEDED: total gate charge] |
| Power Dissition (PD) at TC=25C | — | 300 W |
| Рабочая температура перехода | — | -55 C to +175 C |
| Lead-Free / RoHS | — | Yes (PBF suffix = lead-free) |
| Avalanche Rated | — | Yes (improved Z-variant ruggedness) |