IRLS3036TRLPBF vs IRFB3207ZPBF Comparison
Detailed side-by-side comparison of IRLS3036TRLPBF by Infineon and IRFB3207ZPBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | IRLS3036TRLPBF | IRFB3207ZPBF |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $1.39 | $1.62 |
| Polarity | N-Channel | β |
| Technology | IR HEXFET (planar DMOS) | N-Channel MOSFET (HEXFET, Z-suffix ruggedized) |
| Drain-Source Voltage (Vdss) | 60 V | β |
| Continuous Drain Current (Id) at Tc=25C | 270 A | β |
| Continuous Drain Current (Id) at Tc=100C | 195 A | β |
| Pulsed Drain Current (Idm) | 1100 A | β |
| Rds(on) max @ Vgs=10V | 1.9 mOhm | β |
| Gate-Source Threshold Voltage (Vgs(th)) | Logic level (see datasheet for exact value) [DATA_NEEDED: Vgs(th) typical/min/max] | β |
| Total Gate Charge (Qg) typ | 91 nC | β |
| Gate-Source Voltage (Vgs) max | [DATA_NEEDED: Vgs max +/- V] | β |
| Power Dissipation (Pd) at Tc=25C | 380 W | β |
| Operating Temperature Range | -55C to +175C | β |
| Package | D2PAK (TO-263), surface mount | TO-220AB (3-lead through-hole) |
| Mounting Type | Surface Mount | Through Hole |
| MSL Level | 1 | N/A (through-hole) |
| RoHS Status | Compliant (PBF suffix) | β |
| Lead-Free | Yes (PBF suffix) | β |
| Integrated Body Diode | Yes (avalanche rated) | β |
| Manufacturer | β | Infineon Technologies (formerly International Rectifier) |
| Part Number | β | IRFB3207ZPBF |
| Series | β | HEXFET |
| Drain-Source Voltage (VDS) | β | 75 V |
| Continuous Drain Current (ID) at TC=25C | β | 120 A |
| Silicon-Limited Drain Current | β | 170 A |
| Pulsed Drain Current (IDM) | β | [DATA_NEEDED: pulsed drain current value] |
| On-Resistance RDS(on) typ @ VGS=10V | β | 3.3 mOhm |
| On-Resistance RDS(on) max @ VGS=10V | β | 4.1 mOhm |
| Gate Threshold Voltage VGS(th) | β | [DATA_NEEDED: typical VGS(th)] |
| Total Gate Charge Qg | β | [DATA_NEEDED: total gate charge] |
| Power Dissition (PD) at TC=25C | β | 300 W |
| Operating Junction Temperature | β | -55 C to +175 C |
| Lead-Free / RoHS | β | Yes (PBF suffix = lead-free) |
| Avalanche Rated | β | Yes (improved Z-variant ruggedness) |