MT40A256M16GE-075E:B - 4Gb DDR4 SDRAM 2666 MT/s | Micron
Référence : MT40A256M16GE-075E:B ✓ Actif| Qté | Prix unitaire | Total |
|---|---|---|
| 1 | $5.15 | $5,15 |
| 10 | $4.89 | $48,90 |
| 100 | $4.55 | $455,00 |
| 500 | $4.25 | $2 125,00 |
| 1 000 | $3.95 | $3 950,00 |
MT40A256M16GE-075E:B Présentation
DDR4 SDRAM (Double Data Rate 4 Synchronous Dynamic Random Access Memory) is the fourth generation of the DDR DRAM family, sitting within the hierarchy: DRAM -> SDRAM -> DDR SDRAM -> DDR4 -> volatile memory IC. DDR4 doubles the bank count and lowers the operating voltage relative to DDR3, improving bandwidth and power efficiency in computing, networking, and embedded systems. The JEDEC-defined DDR4 interface uses a pseudo open-drain I/O at 1.2V, along with on-die termination and adjustable internal VREFDQ generation to maintain signal integrity at high data rates.
Key features of this device include 16 internal banks, temperature-controlled refresh (TCR) that extends refresh interval automatically up to 95C, and both 64ms/8192-cycle refresh (at <=85C per JEDEC convention) and 32ms/8192-cycle refresh modes. The 1.2V pseudo open-drain I/O reduces I/O power compared to DDR3L, and on-die internal adjustable VREFDQ generation eliminates the need for external reference voltage routing on the PCB.
Architecturally, the die uses 256Mbit x16 organization with DDR4's bank-group structure, supporting burst lengths of 8 with sequential and interleaved options, and commands are registered on both clock edges to achieve the 2666 MT/s rate. VPP core supply is 2.5V (-125mV/+250mV) per Micron datasheet documentation.
Typical applications include FPGA and processor memory subsystems (such as AMD Zynq UltraScale+ MPSoC designs), networking line cards, industrial controllers, and embedded computing modules requiring a 16-bit-wide DDR4 interface.
Design consideration: verify the memory controller's supported speed grades and the -075E (2666 MT/s) timing set against your clock plan; derate to DDR4-2133 or DDR4-2400 operating points if board topology limits signal integrity.
This page synthesizes distributor pricing, drop-in same-package alternatives, lifecycle notes, and practical design guidance not found in the manufacturer datasheet. Price references are as of 2026-09-03.
Alternatives de remplacement direct pour MT40A256M16GE-075E:B — même boîtier, compatible broche à broche. Les références à boîtier différent nécessitant une retouche du PCB sont exclues.
Variantes de cette série
Modèles de la même série directement compatibles avec MT40A256M16GE-075E:B (même facteur de forme et même empreinte) — différant par Package, Interface, Data Rate, RoHS Status, Organization.
Outil de comparaison rapide — sélectionnez des références alternatives pour une comparaison côte à côte :
MT40A256M16GE-075E IT:B
📋 Alternative de référence (hors catalogue)
MT40A256M16GE-075E:AUT:B
📋 Alternative de référence (hors catalogue)
MT40A256M16GE-075E:AAT:B
📋 Alternative de référence (hors catalogue)
MT40A256M16GE-083E:B
📋 Alternative de référence (hors catalogue)
MT40A256M16GE-062E:B
📋 Alternative de référence (hors catalogue)
MT40A256M16GE-075E:B Valeurs maximales et caractéristiques électriques
| Type de mémoire | DDR4 SDRAM |
| Taille de mémoire | 4 Gbit |
| Organisation de la mémoire | 256M x 16 |
| Memory Interface | Parallel |
| Clock Frequency | 1.33 GHz |
| Débit de données | 2666 MT/s (DDR4-2666) |
| VDD / VDDQ | 1.2 V +/-60 mV |
| VPP | 2.5 V, -125 mV/+250 mV |
| Internal Banks | 16 |
| Refresh | 64 ms / 8192-cycle; 32 ms / 8192-cycle at 95C |
| I/O Type | 1.2 V pseudo open-drain |
| VREFDQ | On-die, internal, adjustable generation |
| Special Features | Temperature controlled refresh (TCR) |
| Boîtier | 96-FBGA (9 x 14 mm) |
| Type de montage | Surface Mount |
Guide de configuration des broches du MT40A256M16GE-075E:B 96-fbga (9 x 14 mm)
Configuration des broches du MT40A256M16GE-075E:B (boîtier 96-fbga (9 x 14 mm)). Ce circuit intégré numérique comprend des GPIO, des interfaces de communication (UART, SPI, I2C) et des broches d'alimentation. Consultez la fiche technique du fabricant pour les fonctions alternatives des broches et les options de configuration. Indispensable pour la conception de systèmes embarqués et la conception de circuits imprimés.
Aucune donnée de brochage détaillée disponible pour MT40A256M16GE-075E:B.
Consultez la fiche technique pour la configuration complète des broches.
Applications typiques
MT40A256M16GE-075E:B convient pour 6 applications: FPGA / Zynq UltraScale+ MPSoC Memory, Networking Line Cards and Switches, Industrial Control and Automation, Automotive Infotainment and ADAS, Embedded Computing Modules (SoM/COM Express), Test and Measurement Instrumentation.
FPGA / Zynq UltraScale+ MPSoC Memory
The MT40A256M16GE-075E:B fits FPGA and MPSoC memory subsystems such as AMD Zynq UltraScale+ (ZU4CG) designs, where its DDR4-2666 rating provides timing margin above the 1200 MHz DDR controller clock and its x16 organization enables easy 32-bit and 64-bit bus scaling with two or four devices. In Vivado MIG-based designs, the on-die adjustable VREFDQ removes external reference routing, simplifying escape routing under dense BGA fanout. The -075E grade gives setup/hold margin at slightly derated operating points, which is valuable on 6-8 layer boards where fly-by routing cannot always achieve full DDR4-2666 eye margins. Because the family is obsolete, use it for sustaining existing designs and migrate new designs to current-production DDR4.
Recommandé
Networking Line Cards and Switches
Enterprise switches and router line cards use x16 DDR4 devices for packet buffer and lookup table memory, and the MT40A256M16GE-075E:B's 2666 MT/s rate and 16 internal banks deliver the bandwidth and low effective row-conflict latency these datapaths require. The 1.2V pseudo open-drain I/O lowers I/O switching power versus DDR3L, reducing thermal load on densely populated line cards. Temperature-controlled refresh adapts refresh rates to the card's internal ambient, cutting refresh power overhead by up to 50% in cool-aisle conditions. Four devices on a 64-bit bus provide 8 GB-class buffer memory at moderate cost, and the 96-FBGA footprint keeps height low for front-access card guides.
Recommandé
Industrial Control and Automation
Programmable logic controllers, motion controllers, and machine-vision systems require dependable working memory across wide temperature ranges. The MT40A256M16GE-075E IT:B variant is specified from -40C to +95C, covering sealed cabinet environments where ambient can exceed 70C. Its 4Gb density supports Linux-based soft controllers with file caching, while the x16 bus keeps DRAM controller complexity and power low. On-die VREFDQ generation improves noise immunity against motor-drive switching noise coupled into memory nets. The temperature-controlled refresh feature reduces refresh current at lower cabinet temperatures, saving power in battery-buffered systems. Design with the IT variant and verify controller timing at the derated operating point for long-term margin.
Recommandé
Automotive Infotainment and ADAS
Automotive infotainment head units and ADAS perception ECUs need DDR4 with AEC-Q100 qualification for cabin and near-engine environments. The MT40A256M16GE-075E:AUT:B provides that qualification in the identical 96-FBGA footprint, easing reuse of validated PCB layouts across carline platforms. The DDR4-2666 rate supports multi-camera ADAS pipelines and HD graphics frame buffers, while the 1.2V interface reduces power dissipation inside thermally constrained dashboard enclosures. Designers should verify the memory controller's automotive timing tables against the -075E speed bin and confirm supply continuity with Flip Electronics given the family's obsolete catalog status. Temperature-controlled refresh helps maintain bandwidth consistency across -40C cold crank to 95C soak conditions.
Recommandé
Embedded Computing Modules (SoM/COM Express)
System-on-module and COM Express carriers populate x16 DDR4 components on both module sides to reach 2-8 GB densities in minimal board area. The MT40A256M16GE-075E:B's 9 x 14 mm 96-FBGA package and 1.2V signaling are well matched to this construction: the BGA balls provide reliable second-level interconnect under thermal cycling, and the low I/O voltage limits per-net switching current when stacks of eight devices share address/command nets in fly-by topology with on-die termination. The 2666 MT/s grade gives margin for the length-matched top/bottom routing typical of modules. For modules sold into industrial and transportation markets, select the IT temperature variant to meet -40C cold-start requirements.
Recommandé
Test and Measurement Instrumentation
Oscilloscopes, logic analyzers, and arbitrary waveform generators rely on deep capture memory; x16 DDR4 parts like the MT40A256M16GE-075E:B supply 4Gb per device, allowing 8 GB of record length with sixteen components. The 16-bank architecture reduces effective random-access latency when the acquisition engine streams data to memory, and DDR4-2666 sustains the sustained write bandwidth needed for multi-channel, high-sample-rate capture. On-die VREFDQ keeps the reference plane clean on boards crowded with high-speed analog front-end circuitry. Instrument vendors should note the obsolescence of this speed bin and qualify a current-production replacement before the next service-life refresh cycle.
Recommandé
Récapitulatif des produits recommandés
Données de référence d'ingénierie pour MT40A256M16GE-075E:B — comparaison, recommandations de conception et informations de conformité.
Guide de sélection
Comparaison avec les alternatives
| Paramètre | Ce produit | MT40A256M16GE-075E IT | MT40A256M16GE-075E | MT40A256M16GE-083E | MT40A256M16GE-062E |
|---|---|---|---|---|---|
| Package | 96-FBGA (9 x 14 mm) | B: 96-FBGA (9 x 14 mm) - same | AUT:B: 96-FBGA (9 x 14 mm) - same | B: 96-FBGA (9 x 14 mm) - same | B: 96-FBGA (9 x 14 mm) - same |
| Brand | Micron Technology | B: Micron Technology | AUT:B: Micron Technology | B: Micron Technology | B: Micron Technology |
| Density / Organization | 4 Gbit, 256M x 16 | B: 4 Gbit, 256M x 16 | AUT:B: 4 Gbit, 256M x 16 | B: 4 Gbit, 256M x 16 | B: 4 Gbit, 256M x 16 |
| Data Rate | 2666 MT/s (DDR4-2666) | B: 2666 MT/s | AUT:B: 2666 MT/s | B: 2400 MT/s | B: 3200 MT/s |
| VDD / VDDQ | 1.2 V +/-60 mV | B: 1.2 V +/-60 mV | AUT:B: 1.2 V +/-60 mV | B: 1.2 V +/-60 mV | B: 1.2 V +/-60 mV |
| Internal Banks | 16 | B: 16 | AUT:B: 16 | B: 16 | B: 16 |
Principaux différenciateurs
- Highest speed grade within the same family footprint (vs MT40A256M16GE-083E:B)
- Industrial temperature option available in the same footprint (vs MT40A256M16GE-075E IT:B)
- AEC-Q100 automotive qualification path (vs MT40A256M16GE-075E:AUT:B)
Notes de conception
For DDR4-2666 operation, follow the Micron datasheet PCB design guide: fly-by address/command routing with on-die termination, length-matched data groups within +/-25 mil per 1000 mil of trace, and a solid reference plane under every memory net. The on-die adjustable VREFDQ removes the external reference voltage net, but keep DQ/DM/DQS pairs tightly coupled to their own return path. On 6-layer boards, derate to DDR4-2400 if eye-margin testing at the -075E bin shows closure at temperature extremes.
Budget the 1.2V VDD/VDDQ rail for the full DDR4-2666 active current plus refresh, and supply VPP at 2.5V (-125mV/+250mV) per the datasheet; VPP back-biasing of the cell array means its current is small but rail accuracy still matters. Enable temperature-controlled refresh (TCR) in the controller so refresh rate relaxes below 85C, cutting refresh power measurably in typical ambient conditions. Estimated: at moderate utilization a single x16 device typically draws several hundred milliamps on the 1.2V rail - verify with Micron's current DDR4 power calculator for your exact usage model.
The -075E suffix is a speed bin, not a temperature code - do not assume the base part covers -40C; specify the IT variant for industrial ranges. Second, this whole MT40A256M16GE family appears in Micron's obsolete catalog, so design-in without a second source or last-time-buy plan is risky: AMD community threads already report shortages for Zynq-based designs. Finally, when substituting -083E for -075E, update the memory controller timing table - the footprint is identical but DDR4-2400 settings are required for guaranteed operation.
Informations de conformité
RoHS compliance per distributor listing (B suffix denotes RoHS/lead-free packaging). AEC-Q100 applies only to the AUT variants (MT40A256M16GE-075E:AUT:B / AAT:B). REACH and halogen-free status not stated in provided data.
